A5056147381- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
- Ga2O3 and related materials
- Transition Metal Oxide Nanomaterials
- Graphene research and applications
- Conducting polymers and applications
- Metal and Thin Film Mechanics
- MXene and MAX Phase Materials
- Nanowire Synthesis and Applications
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Organic Electronics and Photovoltaics
- Advanced Photocatalysis Techniques
- Neuroscience and Neural Engineering
- Photoreceptor and optogenetics research
- Silicon Nanostructures and Photoluminescence
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
Fudan University
2016-2025
Shanghai Fudan Microelectronics (China)
2016-2025
Jiaxing University
2022-2024
Nanjing Normal University
2024
South China Normal University
2024
State Key Laboratory of ASIC and System
2014-2023
Shanghai Innovative Research Center of Traditional Chinese Medicine
2021-2022
National University of Singapore
2003-2005
Institute of Microelectronics
2003-2004
Kiel University
2003
Brain-inspired neuromorphic computing has shown great promise beyond the conventional Boolean logic.
The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and realize tunneling by electrostatic gating to avoid deprivation of band‐edge sharpness resulting from chemical doping, which make them perfect candidates for field effect transistors. Here this study presents SnSe 2 /WSe van der Waals heterostructures as the p‐layer WSe n‐layer. energy band alignment changes a staggered gap offset (type‐II) broken (type‐III) when changing...
To construct an artificial intelligence system with high efficient information integration and computing capability like the human brain, it is necessary to realize biological neurotransmission processing in neural network (ANN), rather than a single electronic synapse as most reports. Because power consumption of synaptic event ∼10 fJ biology, designing intelligent memristors-based 3D ANN energy lower femtojoule-level (e.g., attojoule-level) faster operating speed millisecond-level makes...
Although the energy consumption of reported neuromorphic computing devices inspired by biological systems has become lower than traditional memory, it still remains greater bio-synapses (≈10 fJ per spike). Herein, a flexible MoS2-based heterosynapse is designed with two modulation modes, an electronic mode and photoexcited mode. A one-step mechanical exfoliation method on substrate low-temperature atomic layer deposition process compatible electronics are developed for fabricating wearable...
The data processing efficiency of traditional computers is suffering from the intrinsic limitation physically separated and memory units. Logic-in-memory brain-inspired neuromorphic computing are promising in-memory paradigms for improving avoiding high power consumption caused by extra movement. However, memristors that can conduct digital memcomputing simultaneously limited difference in information form between analogue data. In order to solve this problem, paper proposes a flexible...
A polymer-memory device based on a copolymer containing carbazole (donor) and Eu-complex (acceptor) groups in metal/insulator/metal architecture is described. The nonvolatile has two distinctive bistable conductivity states, exhibits high ON/OFF current ratio, fast response time, acceptable retention under ambient conditions. Application of potential sets the to high-conductivity ON state by generating holes (see Figure).
Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile memory on GO was fabricated through a spin-coating process. The speed the SET and RESET operations found to be significant asymmetric. order 100 ns under −5 V voltage while three orders magnitude slower (100 μs) 5 bias. behavior difference elucidated modulated oxygen diffusion barrier change.
Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The films can be deposited preferentially at relatively low temperatures 160-200 °C, exhibiting a stable growth rate 1.4-1.5 Å/cycle. surface roughness the film increases gradually with deposition temperature, which is attributed to enhanced crystallization higher temperature. As temperature from 150 200 optical band gap (Eg) rises 3.42 3.75...
Abstract The demand of flexible neuromorphic computing electronics is increasing with the rapid development wearable artificial intelligent devices. resistive random‐access memory (RRAM) one excellent candidate high‐density storage However, due to limitations fabrication process, materials system and device structure, it difficult prepare 3D network for computing. In this paper, a memristors developed via low‐temperature atomic layer deposition (ALD) at 130°C, potential extending various...
Abstract High-quality Ti-doped ZnO films were grown on Si, thermally SiO 2 , and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, deionized water sources for Ti, Zn, O, respectively. The was then achieved growing TiO alternately. A hampered growth mode of confirmed comparing the thicknesses measured spectroscopic ellipsometry expected. It also found that locations (100) diffraction peaks shift towards...
Aluminum-doped zinc oxide (AZO) films were grown by atomic layer deposition at 200 °C. The influence of Al content on the structure, optical, and electrical properties AZO was investigated. X-ray diffraction spectra revealed that ZnAlO have a hexagonal structure with preferential c-axis orientation perpendicular to substrate surface. Furthermore, 0.1° peak shift angle 34.5° from wurtzite higher values observed after doping. photoelectron film showed Zn exists only in states an...
Abstract The integration of ultra-thin gate oxide, especially at sub-10 nm region, is one the principle problems in MoS 2 based transistors. In this work, we demonstrate uniform deposition Al O 3 on basal plane by applying ultra-low energy remote oxygen plasma pretreatment prior to atomic layer deposition. It demonstrated that species are physically adsorbed surfaces without making flakes oxidized and capable benefiting mobility flake. Based method, top-gated transistor with ultrathin...
An artificial synaptic device with a continuous weight modulation behavior is fundamental to the hardware implementation of bioinspired neuromorphic systems. Recent reported devices have less number conductance states, which not beneficial for weights in computing. Preparing as many states possible great significance development brain-inspired Here, we present two-terminal flexible organic ultra-multimodulated realizing face recognition functionality strong error-tolerant nature first time....
Transistors with exfoliated two-dimensional (2D) materials on a SiO2/Si substrate have been applied and proven effective in wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, spintronics. However, these devices usually suffer from limited gate control because the thick SiO2 dielectric lack reliable transfer method. We introduce new back-gate transistor scheme fabricated novel Al2O3/ITO (indium tin oxide)/SiO2/Si "stack"...
This letter investigates the switching behavior of TaN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> :Ag:ZnO/ITO memristors fabricated on flexible substrates, for nonvolatile memory and neuromorphic computing applications. The embedded Ag nanoparticles provide improved device yield reduced variability in resistance, from more than 160% to 30%. They also set reset voltages, 35% 18%...
Precisely controlled WO<sub>3–x</sub>@TiO<sub>2–x</sub> nanosheet photoanodes are fabricated for efficient and stable PEC water oxidation.
Electronic-Photonic integrated systems have attracted intensive attention in addressing the explosively increasing data-processing issue post-Moore era. However, tremendous size difference between basic electronic and photonic units poses challenges for further deep convergence of optoelectronic microprocessors. Here, we report a floating-gate transistor fabricated with complementary metal-oxide-semiconductor compatible technologies, which can realize multilevel photoelectric logic computing...
The high surface-to-volume ratio and decent material properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) make them advantageous as an active channel in field-effect transistor (FET)-type gas sensing devices. However, most existing TMD sensors are based on a two-terminal resistance-type structure suffer from low responsivity slow response, which has urged materials optimization well device engineering. Metal-organic frameworks (MOFs) have large number ordered binding...