A5100399574- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Neuroscience and Neural Engineering
- Perovskite Materials and Applications
- Transition Metal Oxide Nanomaterials
- Quantum and electron transport phenomena
- Nanowire Synthesis and Applications
- UAV Applications and Optimization
- Electronic and Structural Properties of Oxides
- CCD and CMOS Imaging Sensors
- Quantum optics and atomic interactions
- Plasmonic and Surface Plasmon Research
- Advanced Sensor and Energy Harvesting Materials
- Advanced Thermoelectric Materials and Devices
- Wireless Communication Security Techniques
- Electrostatic Discharge in Electronics
- Magnetic properties of thin films
- Neural Networks and Reservoir Computing
- Semiconductor Quantum Structures and Devices
- Graphene research and applications
- Quantum, superfluid, helium dynamics
- Photoreceptor and optogenetics research
Collaborative Innovation Center of Advanced Microstructures
2019-2025
Nanjing University
2019-2025
Dalian University of Technology
2024
University of Science and Technology Beijing
2024
Fuzhou University
2024
Jiangsu University of Science and Technology
2023
State Key Laboratory of Low-Dimensional Quantum Physics
2018
Tsinghua University
2018
Beijing University of Technology
2016-2018
Fudan University
2010-2017
Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities retina provides a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate prototype that operates via gate-tunable positive negative photoresponses van der Waals (vdW) vertical heterostructures. The emulates not only bipolar cells photoreceptors but also unique connectivity between photoreceptors. By tuning gate...
With many fantastic properties, memristive devices have been proposed as top candidate for next-generation memory and neuromorphic computing chips. Significant research progresses made in improving performance of individual demonstrating functional applications based on small-scale crossbar arrays. However, practical deployment large-scale traditional metal oxides array has challenging due to several issues, such high-power consumption, poor device reliability, low integration density so on....
Abstract Compared to human vision, conventional machine vision composed of an image sensor and processor suffers from high latency large power consumption due physically separated sensing processing. A neuromorphic system with brain-inspired visual perception provides a promising solution the problem. Here we propose demonstrate prototype by networking retinomorphic memristive crossbar. We fabricate using WSe2/h-BN/Al2O3 van der Waals heterostructures gate-tunable photoresponses, closely...
With the rising demand for information security, there has been a surge of interest in harnessing intrinsic physical properties device designing secure logic circuit. Here we provide an innovative approach to realize optoelectronic circuit based on nonvolatile van der Waals (vdW) heterostructure phototransistors. The phototransistors comprising WSe2 and h-BN flakes exhibit electrical tunability conductance under cooperative operations light stimulus. This intriguing feature allows...
Parallel perception of visual motion is crucial significance to the development an intelligent machine vision system. However, implementing in-sensor parallel using conventional complementary metal-oxide semiconductor technology challenging, because temporal and spatial information embedded in cannot be simultaneously encoded perceived at sensory level. Here, we demonstrate diverse modes sensor level by exploiting light-tunable memory matrix a van der Waals (vdW) heterostructure array. The...
The spin Hall effect (SHE) allows efficient generation of polarization or current through charge and plays a crucial role in the development spintronics. While SHE typically occurs non-magnetic materials is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples to magnetization ferromagnetic materials, offers new charge-spin conversion mechanism with functionalities. Here, we report observation giant T-odd Fe3GeTe2/MoTe2 van der Waals heterostructure, representing...
We demonstrated a flexible resistive random access memory device through low-temperature atomic layer deposition process. The is composed of an HfO2/Al2O3-based functional stack on indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, exhibits typical bipolar, reliable, and reproducible switching behavior. 104-s retention time, window still in accordance with excellent thermal stability, 10-year usage possible resistance ratio larger than 10 at room...
This letter investigates the switching behavior of TaN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> :Ag:ZnO/ITO memristors fabricated on flexible substrates, for nonvolatile memory and neuromorphic computing applications. The embedded Ag nanoparticles provide improved device yield reduced variability in resistance, from more than 160% to 30%. They also set reset voltages, 35% 18%...
Resistive switching behaviors of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (>; 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> ) high- to low-resistance states were observed...
Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding underlying mechanism, which is still under debate. Here, we explicitly identify dominant physical origin MR through situ tuning magneto-transport properties thin WTe2 film. With an electrostatic doping approach, observed a nonmonotonic gate dependence MR. The reaches maximum (10600%) film at certain voltage where electron and hole concentrations are balanced,...
Abstract Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in vicinity correlation-driven quantum phase transitions (QPTs), critical fluctuations multiple degrees freedom facilitate exotic many-body states and behaviours beyond Landau’s framework 1 . Recently, moiré heterostructures van der Waals materials have demonstrated as highly tunable platforms exploring fascinating, strongly correlated...
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction perpendicular interfacial anisotropy (p-MTJ). resulting asymmetric write and readout operations impose challenges in downscaling direct cascadability p-MTJ devices. Here, we propose that a previously unimplemented symmetric mechanism can be realized perpendicular-anisotropy spin-orbit (PASO) quantum materials Fe 3 GeTe 2 WTe . We demonstrate field-free deterministic reversal...
Abstract As the first gold mine discovered at sea in China and only coastal currently mined there, Sanshandao Gold Mine faces unique challenges. The mine's safety is under continual threat from its faulted structure coupled with overlying water. mining proceeds deeper, risk of water inrush increases. maximum yield reaches 15 000 m 3 /day, which attributable to channels present fault zones. Predominantly composed soil–rock mixtures (SRM), these zones' seepage characteristics significantly...
Fast switching of positive and negative photocurrents a device under the modulation different incident laser power densities.
Human skin provides crucial tactile feedback, allowing us to skillfully perceive various objects by sensing and encoding complex deformations through multiple parameters in each receptor. However, replicating this high-dimensional perception with conventional materials' electronic properties remains a daunting challenge. Here, we present skin-inspired method encode strain vectors directly within sensor. This is achieved leveraging the strain-tunable quantum of bands van der Waals topological...
Detection of light ellipticity is crucial importance for target imaging and recognition in complex scenarios. However, it has been challenging to achieve one-shot detection by a single conventional optoelectronic device, due coupling between intensity polarization. Here, we realize using four-terminal valley Hall device based on monolayer MoS2 quantum material. The can decouple the elliptical polarization enable simultaneous photoconduction effects. We show that be directly detected...
In-memory computing hardware based on memristors has emerged as a promising option for scientific due to its large-scale parallel data processing capability. However, the nonuniformity issue of renders practical deployment in-memory complex, requiring peripheral circuits ensure accuracy computing, thereby resulting in increased power consumption. Here, we present mortise-tenon-shaped (MTS) memristor with ultrahigh uniformity by introducing mortise-shaped h-BN flake HfO2 switching layer. The...
Abstract In the regime of Rydberg electromagnetically induced transparency, we study correlated behaviors between transmission spectra a pair probe fields passing through respective parallel one-dimensional cold ensembles. Due to van der Waals (vdW) interactions atoms, each ensemble exhibits local optical nonlinearity, where output EIT are sensitive both input intensity and photonic statistics. More interestingly, nonlocal nonlinearity emerges two spatially separated ensembles, as...
The excellent resistive switching characteristics of atomic-layer-deposited HfLaO-based devices are investigated for nonvolatile memory applications. With the help nonlattice oxygen ions which is designed to incorporate into film by decomposition H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O during process, highly uniform and reproducible resistance cycles could be observed with ratio as high 10 <sup...
Variations in SET and RESET voltages during resistive switching cause problems for transition-metal-oxide-based memory applications. The random circuit breaker network model has illustrated that the formation rupture of conducting filaments result this instability. A solution consisting a carefully designed electric field redistribution is proposed to minimize these variations. This behavior occurs an ultrathin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time this letter. CRS behaviors Al/Ni/NiAlOx/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3-x</sub> /ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ), 50-ms switch speed...