A5045096283- Graphene research and applications
- 2D Materials and Applications
- Quantum and electron transport phenomena
- Topological Materials and Phenomena
- Perovskite Materials and Applications
- Molecular Junctions and Nanostructures
- Diamond and Carbon-based Materials Research
- MXene and MAX Phase Materials
- Physics of Superconductivity and Magnetism
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Plasmonic and Surface Plasmon Research
- Boron and Carbon Nanomaterials Research
- Mechanical and Optical Resonators
- Surface and Thin Film Phenomena
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Strong Light-Matter Interactions
- Semiconductor materials and devices
- Carbon Nanotubes in Composites
- Advanced Memory and Neural Computing
- Thermal properties of materials
National Institute for Materials Science
2016-2025
Instituto de Ciencia de Materiales de Sevilla
2017-2025
Institute of Molecular Functional Materials
2021-2025
Optica
2025
Material Sciences (United States)
2025
University of Rostock
2024
Czech Academy of Sciences, Institute of Physics
2024
University of Regensburg
2024
Instituto de Física Teórica
2024
Institute of Semiconductors
2024
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class electronic devices. Realizing this potential, however, depends critically the ability to make high-quality electrical contact. Here, we report contact geometry in which metalize only 1D edge 2D layer. In addition outperforming conventional surface contacts, edge-contact allows complete separation layer assembly metallization processes. heterostructures,...
Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering van heterostructure composed monolayer graphene flake coupled to rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in local breaking the carbon sublattice symmetry and long-range moir\'e superlattice potential graphene. This interplay between short-...
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at micrometer scale for wide range carrier concentrations. The encapsulation makes practically insusceptible to the ambient atmosphere and, simultaneously, allows use boron nitride as ultrathin top gate dielectric.
Nanoimaged Polaritons Engineered heterostructures consisting of thin, weakly bound layers can exhibit many attractive electronic properties. Dai et al. (p. 1125 ) used infrared nanoimaging on the surface hexagonal boron nitride crystals to detect phonon polaritons, collective modes that originate in coupling photons optical phonons. The findings reveal dependence polariton wavelength and dispersion thickness material down just a few atomic layers.
Materials emitting light in the deep ultraviolet region around 200 nanometers are essential a wide-range of applications, such as information storage technology, environmental protection, and medical treatment. Hexagonal boron nitride (hBN), which was recently found to be promising emitter, has traditionally been synthesized under high pressure at temperature. We successfully high-purity hBN crystals atmospheric by using nickel-molybdenum solvent. The obtained emitted intense 215-nanometer...
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter barrier sandwiched between graphene contacts. We demonstrate tunneling is drastically enhanced with increasing CrI3 layer thickness, reaching record 19,000% for structures using...
Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility combining diverse atomic layers by mechanical "stacking" create novel materials devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, graphene gate electrodes. These devices show mobilities up 45 cm(2)/Vs operating...
Upping the pressure in bilayer graphene The discovery of superconductivity and exotic insulating phases twisted has established this material as a model system strongly correlated electrons. To achieve superconductivity, two layers need to be at very precise angle with respect each other. Yankowitz et al. now show that another experimental knob, hydrostatic pressure, can used tune phase diagram (see Perspective by Feldman). Applying increased coupling between layers, which shifted...
Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on intrinsic high-quality dual-gated monolayer bilayer graphene p-n junction devices. Local laser excitation at interface leads to striking six-fold photovoltage patterns as function bottom- top-gate voltages. These patterns, together with measured spatial density...
A novel method of fabricating a periodic domain structure with ideal laminar domains in LiNbO3 by applying an external field at room temperature is proposed. The allows high blue beam power 20.7 mW and conversion efficiency 600%/W cm2 to be obtained.