A5006570442- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Graphene research and applications
- Photoreceptor and optogenetics research
- Nanowire Synthesis and Applications
- Silicon Carbide Semiconductor Technologies
- Perovskite Materials and Applications
- Neuroscience and Neural Engineering
- ZnO doping and properties
- Topological Materials and Phenomena
- Advanced Database Systems and Queries
- Neural Networks and Reservoir Computing
- Conducting polymers and applications
- Electronic and Structural Properties of Oxides
- Integrated Circuits and Semiconductor Failure Analysis
- Data Management and Algorithms
- Electrocatalysts for Energy Conversion
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Piezoelectric Materials
- Thin-Film Transistor Technologies
- Advanced battery technologies research
Shanghai Fudan Microelectronics (China)
2015-2025
Fudan University
2016-2025
Shanghai Innovative Research Center of Traditional Chinese Medicine
2021-2025
State Key Laboratory of ASIC and System
2016-2024
Shanghai University
2022-2024
Jiangsu University
2024
Jiaxing University
2022-2023
Hunan University
2023
Xiamen University
2022
Chang'an University
2021-2022
Rapid development and application of nanomaterials nanotechnology make assessment their potential health environmental impacts on humans, non-human biota, ecosystems imperative. Here we show that pumpkin plants (Cucurbita maxima), grown in an aqueous medium containing magnetite (Fe3O4) nanoparticles, can absorb, translocate, accumulate the particles plant tissues. These results suggest plants, as important component ecological systems, need to be included when evaluating overall fate,...
Brain-inspired neuromorphic computing has shown great promise beyond the conventional Boolean logic.
With the development and application of artificial intelligence, there is an appeal to exploitation various sensors memories. As most important perception human beings, vision occupies more than 80% all received information. Inspired by biological eyes, retina based on 2D Janus MoSSe was fabricated, which could simulate functions visual with electronic/ion optical comodulation. Furthermore, inspired brain, sensing, memory, neuromorphic computing were integrated one device for multifunctional...
To construct an artificial intelligence system with high efficient information integration and computing capability like the human brain, it is necessary to realize biological neurotransmission processing in neural network (ANN), rather than a single electronic synapse as most reports. Because power consumption of synaptic event ∼10 fJ biology, designing intelligent memristors-based 3D ANN energy lower femtojoule-level (e.g., attojoule-level) faster operating speed millisecond-level makes...
Although the energy consumption of reported neuromorphic computing devices inspired by biological systems has become lower than traditional memory, it still remains greater bio-synapses (≈10 fJ per spike). Herein, a flexible MoS2-based heterosynapse is designed with two modulation modes, an electronic mode and photoexcited mode. A one-step mechanical exfoliation method on substrate low-temperature atomic layer deposition process compatible electronics are developed for fabricating wearable...
Neuromorphic computing memristors are attractive to construct low-power- consumption electronic textiles due the intrinsic interwoven architecture and promising applications in wearable electronics. Developing reconfigurable fiber-based is an efficient method realize that capable of neuromorphic function. However, previously reported artificial synapse neuron need different materials configurations, making it difficult multiple functions a single device. Herein, textile memristor network Ag/MoS
The data processing efficiency of traditional computers is suffering from the intrinsic limitation physically separated and memory units. Logic-in-memory brain-inspired neuromorphic computing are promising in-memory paradigms for improving avoiding high power consumption caused by extra movement. However, memristors that can conduct digital memcomputing simultaneously limited difference in information form between analogue data. In order to solve this problem, paper proposes a flexible...
Researching optoelectronic memristors capable of integrating sensory and processing functions is essential for advancing the development efficient neuromorphic vision. Here, we experimentally demonstrated an all-optical controlled self-rectifying memristor (OEM) crossbar array with function multilevel storage under light stimuli. The NiO/TiO2 device exhibits ultrahigh (>104) rectifying ratio (RR) thus overcoming presence sneak current. reversible conductance modulation without electric...
In this work, we compare the electrical characteristics of MoS2 field-effect transistors (FETs) with Ag source/drain contacts those Ti and demonstrate that metal–MoS2 interface is crucial to device performance. FETs show more than 60 times higher ON-state current contacts. order better understand mechanism performance contacts, 5 nm Au/5 (contact layer) or film was deposited onto monolayers few layers, topography metal films characterized using scanning electron microscopy atomic force...
Abstract In-memory computing may enable multiply-accumulate (MAC) operations, which are the primary calculations used in artificial intelligence (AI). Performing MAC operations with high capacity a small area energy efficiency remains challenge. In this work, we propose circuit architecture that integrates monolayer MoS 2 transistors two-transistor–one-capacitor (2T-1C) configuration. structure, memory portion is similar to 1T-1C Dynamic Random Access Memory (DRAM) so theoretically cycling...
Abstract The demand of flexible neuromorphic computing electronics is increasing with the rapid development wearable artificial intelligent devices. resistive random‐access memory (RRAM) one excellent candidate high‐density storage However, due to limitations fabrication process, materials system and device structure, it difficult prepare 3D network for computing. In this paper, a memristors developed via low‐temperature atomic layer deposition (ALD) at 130°C, potential extending various...
Abstract 2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of reported MoS 2 function under photogating effect originated from charge‐trap mechanism, which is difficult quantitative control. Such devices generally suffer a poor compromise between response speed and responsivity ( R ) large dark current. Here, dual‐gated (DG) phototransistor operating on interface coupling (ICE) demonstrated. By...
In order to imitate brain-inspired biological information processing systems, various neuromorphic computing devices have been proposed, most of which were prepared on rigid substrates and energy consumption levels several orders magnitude higher than those synapses (∼10 fJ per spike). Herein, a new type wearable organic ferroelectric artificial synapse is has two modulation modes (optical electrical modulation). Because the high photosensitivity semiconductors ultrafast polarization...
Realization of dendric signal processing in the human brain is great significance for spatiotemporal neuromorphic engineering. Here, we proposed an ionic dendrite device with multichannel communication, which could realize synaptic behaviors even under ultralow action potential 80 mV. The not only simulate one-to-one information transfer axons but also achieve a many-to-one modulation mode dendrites. By adjustment two presynapses, Pavlov's dog conditioning experiment was learned...
In recent years, memristors have successfully demonstrated their significant potential in artificial neural networks (ANNs) and neuromorphic computing. Nonetheless, ANNs constructed by crossbar arrays suffer from cross-talk issues low integration densities. Here, we propose an eight-layer three-dimensional (3D) vertical memristor with ultrahigh rectify ratio (RR > 107) nonlinearity (>105) to overcome these limitations, which enables it reach a >1 Tb array size without reading failure....
Topological insulators are unique electronic materials with insulating interiors and robust metallic surfaces. Device applications exploiting their remarkable properties have so far been hampered by the difficulty to electrically tune Fermi levels of both bulk thin film samples. Here we show experimentally that single-crystal nanowires topological insulator Bi2Se3 can be used as conduction channel in high-performance field effect transistor (FET), a basic circuit building block. Its...
An artificial synaptic device with a continuous weight modulation behavior is fundamental to the hardware implementation of bioinspired neuromorphic systems. Recent reported devices have less number conductance states, which not beneficial for weights in computing. Preparing as many states possible great significance development brain-inspired Here, we present two-terminal flexible organic ultra-multimodulated realizing face recognition functionality strong error-tolerant nature first time....