A5090434866- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Semiconductor materials and devices
- Graphene research and applications
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- 2D Materials and Applications
- Quantum-Dot Cellular Automata
- Photoreceptor and optogenetics research
- Physical Unclonable Functions (PUFs) and Hardware Security
- Advanced Sensor and Energy Harvesting Materials
- Copper Interconnects and Reliability
- CCD and CMOS Imaging Sensors
- Neural dynamics and brain function
- Advanced Thermoelectric Materials and Devices
- Transition Metal Oxide Nanomaterials
- High Temperature Alloys and Creep
- Electronic Packaging and Soldering Technologies
- Solidification and crystal growth phenomena
- Thermography and Photoacoustic Techniques
- Quantum optics and atomic interactions
- Machine Learning in Materials Science
- Anodic Oxide Films and Nanostructures
- Boron and Carbon Nanomaterials Research
King Abdullah University of Science and Technology
2021-2025
Liaoning Academy of Materials
2025
Universitat de Barcelona
2019-2024
Soochow University
2018-2024
Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for fabrication electronic devices, with nonvolatile memories being those that have received most attention. The presence and quality RS phenomenon in system can be studied using different prototype cells, performing experiments, displaying figures merit, developing computational analyses. Therefore, real usefulness impact findings...
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced circuits is a major goal for semiconductor industry1,2. However, most studies in this field have been limited fabrication and characterization isolated large (more than 1 µm2) devices on unfunctional SiO2-Si substrates. Some integrated monolayer graphene silicon microchips as large-area 500 interconnection3 channel transistors (roughly 16.5 (refs. 4,5), but all cases integration density was...
Abstract Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences bits. TRNG circuits with high degree randomness and low power consumption may be fabricated by using telegraph noise (RTN) current signals produced polarized metal/insulator/metal (MIM) devices as entropy source. However, RTN MIM made traditional insulators, i.e., transition metal oxides like HfO 2 Al O 3 , are not stable enough due formation lateral expansion defect...
Abstract In the race of fabricating solid‐state nano/microelectronic devices using 2D layered materials (LMs), achieving high yield and low device‐to‐device variability are two main challenges. Electronic that drive currents in‐plane homogeneously along 2D‐LMs (i.e., transistors, memtransistors) strongly affected by local defects grain boundaries, wrinkles, thickness fluctuations, polymer residues), as they create inhomogeneities increase variability, resulting in a poor performance at...
Abstract The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a major goal semiconductor industry for the next decade, as it may allow extension Moore’s law, aids in in-memory computing and enables advanced devices beyond conventional complementary metal-oxide-semiconductor (CMOS) technology. However, most circuital demonstrations so far utilizing 2D employ methods such mechanical exfoliation that are not up-scalable wafer-level fabrication, their...
Two-dimensional (2D) material-based memristors have shown several properties that are not by traditional ones, such as high transparency, robust mechanical strength and flexibility, superb chemical stability, enhanced thermal heat dissipation, ultralow power consumption, coexistence of bipolar threshold resistive switching, ultrastable relaxation when used electronic synapse (among others). However, electrical performances often required in memristive applications, the generation multiple...
Abstract Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of RTN signal. In this paper, an exhaustive statistical analysis signals produced by...
Abstract Memristor‐based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential for hardware implementation of artificial neural networks, advanced data encryption, and high‐frequency switches 5G/6G communication. Application aside, the performance reliability memristors need to be improved increase fit technology standards. groups propose novel nano‐materials beyond phase‐change, metal‐oxides, magnetic...
Hexagonal boron nitride (h-BN) is an attractive insulating material for nanoelectronic devices due to its high reliability as dielectric and excellent compatibility with other two dimensional (2D) materials (e.g. graphene, MoS2). Multilayer h-BN stacks have been readily grown on Cu Pt substrates via chemical vapor deposition (CVD) approach, confirming potential wafer scale integration. However, the growth of needs be also achieved in order expand use this material. Recently, CVD monolayer Fe...
2D materials have many outstanding properties that make them attractive for the fabrication of electronic devices, such as high conductivity, flexibility, and transparency. However, integrating in commercial devices circuits is challenging because their structure can be damaged during process. Recent studies demonstrated standard metal deposition techniques (like electron beam evaporation sputtering) significantly damage atomic materials. Here it shown via inkjet printing technology does not...
Inkjet-printed h-BN memristors exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits data encryption. The high variability can be exploited to create unique and unpredictable patterns.
Resistive switching devices based on the Au/Ti/TiO2/Au stack were developed. In addition to standard electrical characterization by means of I-V curves, scanning thermal microscopy was employed localize hot spots top device surface (linked conductive nanofilaments, CNFs) and perform in-operando tracking temperature in such spots. this way, responses can be simultaneously recorded related each other. a complementary model for simulation (based COMSOL Multiphysics) implemented order link...
A 2D hexagonal boron nitride (h-BN) memristor with inkjet-printed silver electrodes is fabricated for ultra-stable random telegraph noise and connected to a custom, low-cost true number generator using commercial components.
<title>Abstract</title> The emergence of memristors offers a revolutionary solution for achieving in-memory computing at the hardware level. However, existing suffer from inherent channel materials damage during cyclical resistive switching, rendering excessive energy consumption and poor endurance. Herein we contribute an innovative Molecular Crystal Memristor, which representative material, Sb2O3, possesses unique molecular crystal structure where cages are interconnected via van der Waals...
Abstract Hardware implementations of artificial neural networks (ANNs)—the most advanced which are made millions electronic neurons interconnected by hundreds synapses—have achieved higher energy efficiency than classical computers in some small-scale data-intensive computing tasks 1 . State-of-the-art neuromorphic computers, such as Intel’s Loihi 2 or IBM’s NorthPole 3 , implement ANNs using bio-inspired neuron- and synapse-mimicking circuits complementary metal–oxide–semiconductor (CMOS)...
Memristors have shown an extraordinary potential to emulate the plastic and dynamic electrical behaviors of biological synapses been already used construct neuromorphic systems with in-memory computing unsupervised learning capabilities; moreover, small size simple fabrication process memristors make them ideal candidates for ultradense configurations. So far, properties memristive electronic (i.e., potentiation/depression, relaxation, linearity) extensively analyzed by several groups....
Abstract Data encryption is an essential building block in modern electronic systems to prevent spying and hacking. Every day more objects produce data, this needs be encrypted before being transmitted. Hence, designing devices, circuits, for data that can integrated all kinds of consume low amounts energy highly necessary. Here, work reports the fabrication flexible transparent circuits consisting devices exhibit threshold‐type resistive switching with a high degree stochasticity. The...