A5078089589- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- Acoustic Wave Resonator Technologies
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- Neuroscience and Neural Engineering
NaMLab (Germany)
2022-2025
Technische Universität Dresden
2022-2025
IBM Research - Zurich
2022
The discovery of ferroelectricity in aluminum scandium nitride (Al1-xScxN) opens technological perspectives for harsh environments and space-related memory applications, considering the high-temperature stability piezoelectricity nitride. ferroelectric material properties 100 nm-thick Al0.72Sc0.28N are studied up to 873 K, combining both electrical situ X-ray diffraction measurements as well transmission electron microscopy energy-dispersive spectroscopy. present work demonstrates that can...
Abstract The emergence of ferroelectric and antiferroelectric properties in the semiconductor industry's most prominent high‐k dielectrics, HfO 2 ZrO , is leading to technology developments unanticipated a decade ago. Yet failure clearly distinguish from behavior impeding progress. Band‐excitation piezoresponse force microscopy molecular dynamics are used elucidate nanoscale electric field‐induced phase transitions present ‐based antiferroelectrics. Antiferroelectric distinguished closely...
Abstract Ferroelectric wurtzite‐type aluminum scandium nitride (Al 1−x Sc x N) presents unique properties that can enhance the performance of non‐volatile memory technologies. The realization full potential Al N requires a comprehensive understanding mechanism polarization reversal and domain structure dynamics involved in ferroelectric switching process. In this work, transient current integration measurements performed by pulse method are combined with imaging piezoresponse force...
Aluminum scandium nitride (Al1–xScxN), with its large remanent polarization, is an attractive material for high-density ferroelectric random-access memories. However, the cycling endurance of Al1–xScxN capacitors far below what can be achieved in other materials. Understanding nature and dynamics breakdown mechanism utmost importance improving memory reliability. The phenomenon proposed to impulse thermal filamentary-driven process along preferential defective pathways. For first time,...
Abstract The in‐memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von‐Neumann computers by reducing data‐transport per arithmetic operation. Crossbar arrays multilevel memristive devices enable efficient calculations matrix‐vector‐multiplications, an operation extensively called on in artificial intelligence (AI) tasks. Resistive random‐access memories (ReRAMs) are promising candidate for such applications. However, they generally exhibit large stochasticity and...
Abstract Wurtzite‐structured ferroelectrics, such as aluminum scandium nitride (Al 1‐x Sc x N), are among the most promising candidates for implementing innovative nonvolatile memory concepts into commercial technologies. However, opposite state (OS) retention limits long‐term performances. Since verifying requirement directly up to 10 years, typically targeted by technologies, is timely unfeasible, developing a model predict 10‐year OS performances of wurtzite‐structured ferroelectrics...
Abstract Fluorite‐structured ferroelectrics are one of the most promising material systems for emerging memory technologies. However, when integrated into electronic devices, these materials exhibit strong imprint effects that can lead to a failure during writing or retention operations. To improve performance and reliability it is cardinal understand physical mechanisms underlying operation. In this work, comparison First‐Order Reversal Curves measurements with new gradual switching...
The capability to reliably program partial polarization states with nanosecond programming speed and femtojoule energies per bit in ferroelectrics makes them an ideal candidate realize multibit memory elements for high-density crossbar arrays, which could enable neural network models a large number of parameters at the edge. However, thorough understanding domain switching dynamics involved reversal is required achieve full control capability. Transient current integration measurements are...
Aluminum scandium nitride (Al 1− x Sc N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN Sc, the bonds in polar structure are weakened, which enables switching below dielectric breakdown field. However, one disadvantage of that it increases material's tendency toward oxidation. Herein, oxidation process tungsten‐capped uncapped Al 0.83 0.17 N thin films investigated by hard...
A complete picture of the dynamics ferroelectric oxide/metal interface is presented, which unifies main reliability issues, field cycling endurance, and retention for HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> –based films in random-access memory. Together with a novel interpretation, established as key component pioneering -based ferroelectrics commercial memories.
Aluminum scandium nitride (Al$_{1-x}$Sc$_x$N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN Sc, the bonds in polar structure are weakened, which enables switching below dielectric breakdown field. However, one disadvantage of Sc that it increases material's tendency towards oxidation. In present study, oxidation process tungsten-capped uncapped Al$_{0.83}$Sc$_{0.17}$N thin...
In recent years, bilayer RRAMs based on conductive metal-oxide (CMO)/HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> have gained ground in the field of analogue in-memory computing. Compared to conventional metal/HfO systems, RRAM structures show reduced switching stochasticity, enhanced symmetry set and reset transition, improved endurance [1]–[3]. Despite their remarkable capabilities implement neuromorphic especially for training...
Filamentary bilayer ReRAMs based on conductive metal-oxide (CMO) / HfOx have gained potential for applications in the field of analog in-memory computing. Compared to conventional metal system, resistive switching graduality improves and stochasticity decreases. In this work we replace a standard Ti scavenging layer an HfOx-based ReRAM with such as TaOx. We assess material stack structural electrical properties identify onset oxidized at interface between dielectric CMO layer. discuss its...