A5007554508- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
NaMLab (Germany)
2022-2024
Technische Universität Dresden
2022
Abstract Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible materials for next‐generation, non‐volatile memory devices. Nevertheless, performance reliability remains an issue. With TiN electrodes (the reported electrode material), Hf‐Zr‐based ferroelectric capacitors struggle to provide reliable retention due electrode‐ferroelectric interface interactions. Although are fabricated with other electrodes, focus predominantly directed toward obtaining a large...
Abstract Further optimization of a typically reported ferroelectric capacitor comprised Hf 0.5 Zr O 2 thin film with TiN electrodes is explored by introducing an additional non‐ferroelectric La 3 interfacial layer evaluated at different positions in the stack. The role interface to investigated and discussed, main focus directed toward reliability device for non‐volatile memory applications. With this investigation, degradation mechanisms determining electric field cycling polarization...
Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve high-performance required for memory and computing technologies. These exhibit excellent scalability compatibility with the complementary metal-oxide semiconductor process used by foundries, but stabilizing properties a low operation voltage in as-fabricated state of these is critical component technology advancement. After removing influence interfacial layers, linear correlation observed between...
Zirconium oxide and zirconium-rich ZrxHf1–xO2 thin films have attracted attention owing to their switching stability significant promise for commercial applications such as high-performance, nonvolatile memory devices, high-density energy storage supercapacitors. In the path toward applications, understanding factors influencing formation of ferroelectric properties in these is essential. This study explores impact hafnium doping on various affecting phase films. work highlights that...
A complete picture of the dynamics ferroelectric oxide/metal interface is presented, which unifies main reliability issues, field cycling endurance, and retention for HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> –based films in random-access memory. Together with a novel interpretation, established as key component pioneering -based ferroelectrics commercial memories.
La <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> , and Al were evaluated in the form of interfacial oxide layers as potential modifications to achieve increased electric field cycling endurance polarization retention comparison parent stand-alone Hf xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr capacitor structure. Although it was possible modify ferroelectric conductive...