A5068684928- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Conducting polymers and applications
- Organic Light-Emitting Diodes Research
- Advanced Sensor and Energy Harvesting Materials
- Luminescence and Fluorescent Materials
- 2D Materials and Applications
- Carbon and Quantum Dots Applications
- Postharvest Quality and Shelf Life Management
- Plant Physiology and Cultivation Studies
- Chalcogenide Semiconductor Thin Films
- Luminescence Properties of Advanced Materials
- Copper-based nanomaterials and applications
- Polysaccharides Composition and Applications
- Supercapacitor Materials and Fabrication
- Acoustic Wave Resonator Technologies
- Gas Sensing Nanomaterials and Sensors
- Nanocluster Synthesis and Applications
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Plant Surface Properties and Treatments
Guangxi University
2015-2024
Institute of Science and Technology
2024
Shihezi University
2022-2023
Nanning Normal University
2019
State Council of the People's Republic of China
2019
Wuhan University
2009-2015
Abstract Cesium copper halide perovskite is one of the promising materials for solar‐blind light detection. However, most cesium perovskite‐based photodetectors (PDs) are focused on ultraviolet A detection and realized rigid substrate in single device configuration. Here, a flexible PDs array (10 × 10 pixels) based CsCu 2 I 3 film patterns ultraweak sensing distribution imaging reported. Large‐scale arrays synthesized with various shapes uniform dimensions through simple...
Novel, stable, and lead-free CsCuBr<sub>2</sub> halides were synthesized utilized as efficient light emitters.
Abstract User‐interactive interfaces, converting tactile stimuli into readable signals to users and devices simultaneously, improve the communication interaction between human machines therefore greatly contribute safety dexterity during interactions. However, concomitant challenges of current user‐interactive interfaces such as complex architecture, massive electrodes fussy cable connections, bulky unhandy power supply, deficiency in multistimuli responses have yet be solved. Herein, an...
Firmness, soluble solid content (SSC) and titratable acidity (TA) are characteristic substances for evaluating the quality of cherry tomatoes. In this paper, a hyper spectral imaging (HSI) system using visible/near-infrared (Vis-NIR) near-infrared (NIR) was proposed to detect key qualities The effects individual information fused in detection different were compared firmness, SSC TA Data layer fusion combined with multiple machine learning methods including principal component regression...
Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated commercially available n+-GaN/sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼370 nm with full-width half maximum ∼7 was achieved room temperature when the devices under sufficient forward bias. With help an electron blocking i-Mg1−xZnxO(0&lt;x&lt;1) layer inserted between and NiO layers, intensity has been much enhanced threshold...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Huihui Huang, Guojia Fang, Xiaoming Mo, Longyan Yuan, Hai Zhou, Mingjun Wang, Hongbin Xiao, Xingzhong Zhao; Zero-biased near-ultraviolet visible photodetector based on ZnO nanorods/n-Si heterojunction. Appl. Phys. Lett. 9 February 2009; 94 (6): 063512. https://doi.org/10.1063/1.3082096 Download citation file:...
All inorganic, self-powered, narrowband, and rapid response p-NiO/n-ZnO nanowire (NW) ultraviolet (UV) photodetectors were fabricated investigated with Al2O3 as an interface modification layer. films grown by atomic layer deposition can greatly suppress the surface defects on ZnO NWs improve NW interface. The photo-response of photodetector in 430–500 nm wavelength range was inhibited full-width at half-maximum spectrum less than 30 nm. A large responsivity 1.4 mA/W achieved under a 380 UV...
Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO2 thin films were deposited by dc-reactive magnetron sputtering onto ordered anodic alumina (PAA) substrates. Voltage-driving resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO2/PAA/Al (Ag/TP/Al) device. Further analysis indicates that formation/rupture oxygen vacancy...
A ZnO/ZnMgO multiple-quantum-well ultraviolet (UV) random laser diode was fabricated on a commercially available n-type GaN wafer using radio frequency magnetron sputtering system. The electroluminescence measurements revealed that the exhibited fairly pure UV lasing centered at ~370 nm under sufficient forward bias room temperature. full-widths half-maximum of sharp peaks are less than 0.4 nm. device has very low threshold current density 4.7 A/cm <sup...
n-ZnO/HfO2/p-GaN based heterojunction light emitting diodes were fabricated using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that dominant violet emissions centered at around 415 nm emitted and improved performances observed for the devices with HfO2 intermediate layer; color of could be tuned from (0.18, 0.10) to cold white (0.22, 0.20) by varying Ar/O2 flow ratio during deposition HfO2, which are probably ascribed deep level emission bands...
As versatile energy harvesters, triboelectric nanogenerators (TENGs) have attracted considerable attention in developing portable and self-powered suppliers. The question of how to improve the output power TENGs using cost-effective means is still under vigorous investigation. In this paper, high-output were successfully produced by a simple low-cost lotus-leaf-bionic (LLB) method. Well-distributed microstructures fabricated via LLB method on surface polydimethylsiloxane (PDMS) negative...
Halide perovskites featuring remarkable optoelectronic properties hold great potential for threshold switching devices (TSDs) that are of primary importance to next-generation memristors and neuromorphic computers. However, such still in their infancy due the unsolved challenges high voltage, poor stability, lead-containing features. Herein, a unipolar TSD based on an all-inorganic halide perovskite CsCu2I3 is demonstrated, exhibiting fascinating attributes low voltage 0.54 V, ON/OFF ratio...
We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on n-ZnO/n-GaN isotype heterojunction, which presents a sharp emission centered at 367 nm and broad orange 640 under forward reverse biases, respectively. Time dependence electroluminescence (EL) measurements reveal that this device shows good stability. The mechanism of the is discussed in terms material properties interfacial layer luminescence work.
In this paper, layered ZnO nanowall networks were directly grown on Al substrates using a hydrothermal method without predepositing seed layers. The individual nanowalls with thickness of several nanometers and size hundred (002) surface dominated, in which the preferential growth direction was suppressed. White electroluminescence devices fabricated based Au/polymethylmethacrylate/ZnO-nanowall (metal-insulator-semiconductor) structures. chromaticity coordinate spectrum for optimal device...
Curious X chromosome-shaped Cs 3 Cu 2 I 5 microcrystals synthesized for the first time and used high-performance self-powered UV photodetectors under ultralow light intensity at μW cm −2 level.
A ZnO-based metal-insulator (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) -semiconductor diode was synthesized on a commercially available n <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaN/sapphire substrate using radio-frequency magnetron sputtering system. Electroluminescence measurements revealed that the exhibited fairly pure ultraviolet (UV) emission peaking at ~ 370 nm with line width of less than 8 nm. By...
n-ZnO/p-Si heterojunction light emitting devices with and without a NiO intermediate layer were fabricated using radio frequency magnetron sputtering system. Electroluminescence measurements revealed that the device exhibits sharper stronger orange emission peaks at ∼670 nm compared of layer. And output-current characteristic n-ZnO/NiO/p-Si follows nearly linear relationship (L ∝ I) rather than superlinear I1.5) for device. This work indicates could effectively improve performance