A5016985789- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Mechanical and Optical Resonators
- Advanced Fiber Optic Sensors
- Photonic Crystal and Fiber Optics
- Laser-induced spectroscopy and plasma
- Semiconductor Quantum Structures and Devices
- Quantum Information and Cryptography
- Photonic Crystals and Applications
- Microfluidic and Capillary Electrophoresis Applications
- Atomic and Molecular Physics
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Neural Networks and Reservoir Computing
- Semiconductor materials and devices
- Plasmonic and Surface Plasmon Research
- Laser-Plasma Interactions and Diagnostics
University of Toronto
2016-2024
CEA LETI
2019
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2019
CEA Grenoble
2019
University of Alberta
2012-2015
Lawrence Livermore National Laboratory
1988
Silicon (Si) photonics is forming a fabless ecosystem, which enabling low-cost and densely integrated components for optical communications quantum information. We present Si transmitter polarization-encoded key distribution (QKD). The chip was fabricated in standard photonic foundry process together pulse generator, intensity modulator, variable attenuator, polarization modulator 1.3 mm×3 mm1.3 mm×3 mm die area. devices the circuit meet requirements QKD. used proof-of-concept...
We demonstrate high-bandwidth O-band Mach-Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 V⋅cm and a 3 dB bandwidth up to 30 GHz was observed for modulator length 250 μm at 0 V bias. Open eye patterns were 25 Gb/s.
We introduce a new III-V-on-Silicon (Si) heterogeneous integration platform, where the III-V material is bonded to back of processed Si photonic wafer. This "Back-Side-on-Buried Oxide" (BSoBOX) process fully compatible with active, multilayer photonics platforms. article describes flow and reports on O-band hybrid distributed feedback (DFB) lasers various grating periods fabricated this platform. A comprehensive set measurements show that quarter-wave shifted DFB have comparable performance...
The electromagnetic resonances of optical microspheres—the so-called whispering gallery modes (WGMs)—can be used for refractometric sensing surrounding fluids. Microspheres are attractive because they offer high sensitivity and can utilized with fluorescent dyes or quantum dots. One issue microspheres, however, is that difficult to integrate into microfluidic systems. Here, we develop a structure permits applications using single microsphere in capillary. To achieve this, formed on the end...
This paper explores the detection of vitamin D3 (VD3) using a fluorescent microcavity sensor. There is currently high demand for measurement and analysis this vitamin, whose deficiency may result in several different pathologies; however, standard methods, predominantly based on mass spectroscopy liquid chromatography require large equipment must be done remotely. In contrast, solvent concentrations via microcavity-based optical systems can sensitive to small changes miniscule analyte...
We present O-band InP-on-Si phase modulators with 0.5dB IL, 1V·cm V π L and >25GHz bandwidth for 250μm long sections. 25 Gbps operation without optical amplifiers or pre-emphasis is demonstrated an MZM integrating such modulators.
We investigate integrated mode-locked laser diodes with distributed Bragg reflectors fabricated in the JePPIX-Oclaro indium phosphide photonics platform. The optical and radio-frequency (RF) characteristics of passively lasers without monolithically feedback cavities were measured compared. RF linewidth could be reduced by integrating an cavity a particular length tunable magnitude feedback. A maximum reduction factor 1.9 was observed near onset mode locking, but increasing power tended to...
We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, best producing on-chip powers nearly 20 mW Lorentzian linewidths below kHz a side mode suppression ratio at least 60 dB.
We present the simulation and implementation of a photonic integrated circuit (PIC) designed for filtering optical heterodyning comb-lines generated by 20.97 GHz mode-locked fiber ring laser emitting at C-band. compare simulations obtained coupling junction microrings in PIC with use an analytic approach finite difference time-domain (FDTD) method. A fabrication Triplex asymmetric double-stripe (ADS) waveguides was demonstrated. Using PIC, we demonstrated pairs filtered tunable microrings....
Experiments to obtain time-resolved, soft-x-ray emission from laser-driven plasmas are succinctly described. The spectra (0.19 keV ≤ hν 1.3 keV) at various times have been deconvolved and energy integrated time-resolved yields Au disk targets. temporal profiles of the total thermal x-ray output power follow overall laser shape but do not show high-frequency fluctuation observed in pulse. behavior ratio instantaneous over absorption is studied. studies were done LLNL Nova facility. Single...
We present a new platform integrating heterogeneous III-V/silicon gain devices at the backside of silicon-on-insulator wafers. The fabrication relies on commercial silicon photonic processes. performances lasers and SOAs fabricated accordingly are reported.
We demonstrate the first backside-processed hybrid silicon discrete mode laser. It operates in O-band with a total waveguide-coupled output power >43 mW, 850 kHz linewidth, and side suppression ratio of 60 dB.
We describe a micro-spectrometer based on tapered channel Bragg waveguide, and show that it is well-suited to spectrally resolved fluorescence detection in optofluidic micro-systems. Experimental results for small-volume emitters (fluorescent beads) are reported.
We demonstrate a 4λx8 output DFB laser comb source with 94GHz channel spacing. The produces approximately 1mW of fiber-coupled power per wavelength fiber 2dB variability across all 32 channels.
We demonstrate a 4λx8 output DFB laser comb source with 94GHz channel spacing. The produces approximately 1mW of fiber-coupled power per wavelength fiber 2dB variability across all 32 channels.
We demonstrate the first backside-processed hybrid silicon discrete mode laser. It operates in O-band with a total waveguide-coupled output power >43 mW, 850 kHz linewidth, and side suppression ratio of 60 dB. © 2019 The Author(s)