A5049665136- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Graphene research and applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Graphene and Nanomaterials Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Molecular Junctions and Nanostructures
- Radiation Effects in Electronics
- GaN-based semiconductor devices and materials
- Supercapacitor Materials and Fabrication
- Membrane-based Ion Separation Techniques
- SARS-CoV-2 detection and testing
- CCD and CMOS Imaging Sensors
- Photoreceptor and optogenetics research
- 2D Materials and Applications
- Fuel Cells and Related Materials
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Carbon Nanotubes in Composites
- Photonic and Optical Devices
- Membrane Separation Technologies
Hong Kong Polytechnic University
2024-2025
Institute of Microelectronics
2021-2023
Chinese Academy of Sciences
2020-2023
University of Chinese Academy of Sciences
2021-2023
Tianjin University
2003-2021
Peking University
2011
Foshan University
2006-2010
Abstract The demand for accurate perception of the physical world leads to a dramatic increase in sensory nodes. However, transmission massive and unstructured data from sensors computing units poses great challenges terms power‐efficiency, bandwidth, storage, time latency, security. To efficiently process data, it is crucial achieve compression structuring at terminals. In‐sensor integrates perception, memory, processing functions within sensors, enabling terminals perform structuring....
<title>Abstract</title> Brain-inspired reinforcement learning (RL) represents a pivotal pathway toward artificial general intelligence, yet existing hardware implementations based on neural networks lack critical biological mechanisms like third-terminal modulated eligibility traces and dynamic reward signaling. Emerging materials can address these challenges by mimicking RL’s complex dynamics with revolutionary efficiency. Here we demonstrate brain-inspired SNN-based RL computing...
We have developed a new method to analyze the forward ac behavior of semiconductor diode that uses series mode. This can accurately measure dependence resistance, junction capacitance, voltage, ideality factor, and interfacial layer on bias voltages. Giant negative capacitance (NC) with nonlinear resistance are confirmed in GaN Schottky diodes.
The capacitance characteristics of light emitting diodes (LEDs) are accurately measured using a method based on an alternating-current small signal, together with direct current I-V plot. All LEDs display negative (NC) at large forward bias. By analyzing the dependence both bias and frequency, accurate expression for describing NC was obtained. This is in conflict Shockley’s p-n junction theory, which only describes increasing diffusion does not allow NC. Using advanced theory developed by...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Measurement of obvious negative capacitance (NC) at large forward bias light-emitting diodes (LEDs), using an alternating current (AC) small signal, together with direct (DC) <formula formulatype="inline"> <tex Notation="TeX">$I-V$</tex></formula> plot, has shown that the NC grows exponentially applied voltage. The experimental results are unexpected and in conflict Shockley's p-n junction theory...
Herein, the effect of metal contact doping on scaled graphene field transistor (GFET) is investigated. Different from traditional semiconductors device, drain current GFET not inversely proportional to channel length ( L CH ). The abnormal scaling behavior for in GFETs can be attributed modification resistance induced by penetration doping. In addition, field‐effect mobility μ EF ) long trend saturate with decreasing , which consistent diffusive transport model. As further down, at first...
Precise ac electrical measurements as well dc I-V plots at forward bias have been used to characterize multi-quantum-well (MQW) laser diodes. Step offsets of apparent conductance, capacitance, junction voltage, series resistance, and ideality factor lasing threshold were observed. To compare the characteristics different diodes numerical simulations IdV∕dI-I curve double-heterostructure (DH) performed. We find that conventional model explain this is not very satisfactory. Our demonstrate for...
Cold start has been realized as an important issue for PEMFC in its global commercialization. As is well-known, the conventional "channel-rib" type flow field will surely lead to several problems, such water accumulation under rib, resulting slow removal and serious ice blockage pores. In recent years, with fast development of metal foam materials, recognized a promising alternative replacement field. this study, cold model established sub-zero temperature. The coupled transport processes...
The dependences of series resistance, ideality factor, and junction voltage light-emitting diodes (LEDs) on applied or current were characterized accurately using alternating (ac) behavior combined with I-V plot (acIV method). deep saturation simultaneous decrease factor LEDs at large forward current, which imply the pinning quasi-Fermi levels, observed. Comparing our recent study similar phenomenon laser diodes, in jumps abruptly to a saturated value lasing threshold, changes are gradual....
Accurate forward electrical characteristics of multiquantum-well (MQW) lasers have been measured using ac admittance measurements together with dc I-V plot. The synchronous step offsets apparent conductance, capacitance, junction voltage, series resistance, and ideality factor at the onset lasing were observed for first time. With this effect, threshold can be deduced immediately by LCR Meter. It is also found that voltage jumps abruptly to a saturated value lasing, starting end points...
Abstract Strong C–C bonds, nanoscale cross-section and low atomic number make single-walled carbon nanotubes (SWCNTs) a potential candidate material for integrated circuits (ICs) applied in outer space. However, very little work combines the simulation calculations with electrical measurements of SWCNT field-effect transistors (FETs), which limits further understanding on mechanisms radiation effects. Here, film-based FETs were fabricated to explore total ionizing dose (TID) displacement...
Abstract Contact resistance ( R C ) is of great importance for radio frequency (RF) applications graphene, especially graphene field effect transistors (FETs) with short channel. FETs and transmission line model test structures based on chemical vapor deposition grown are fabricated. The effects employing traditional lithography solvent (Acetone) strong solvents photo resist, such as N, N-Dimethylacetamide (ZDMAC) N-Methyl pyrrolidone (NMP), systematically investigated. It was found that...
The rapid worldwide spread of the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has created a series problems. Detection platforms based on graphene field-effect transistors (GFETs) have been proposed to achieve diagnosis SARS-CoV-2 antigen or antibody. For GFET-based biosensors, surface usually needs be functionalized immobilize bioreceptor and non-covalent approach is preferred for functionalization because it believed not significantly alter electronic properties graphene....
Recently, graphene has led to unprecedented progress in device performance at the atom limit. A high of field-effect transistors requires a low graphene-metal contact resistance. However, chemical doping methods used tailor or improve properties are sensitive ambient conditions. Here, we fabricate single-layer perfluorinated polymeric sulfonic acid (PFSA), also known as Nafion, between and substrate p-type dopant. The PFSA method, without inducing any additional structural defects, reduces...