A5013461737- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- 2D Materials and Applications
- Photonic and Optical Devices
- MXene and MAX Phase Materials
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
- Advanced Semiconductor Detectors and Materials
- Silicon and Solar Cell Technologies
- Conducting polymers and applications
- Semiconductor Lasers and Optical Devices
- Neural Networks and Reservoir Computing
- Advanced Materials and Mechanics
- Ga2O3 and related materials
- Optical Network Technologies
- Gas Sensing Nanomaterials and Sensors
- Dielectric materials and actuators
- Organic Light-Emitting Diodes Research
- Luminescence Properties of Advanced Materials
- Graphene research and applications
- Radiation Detection and Scintillator Technologies
- Metamaterials and Metasurfaces Applications
- Power Systems Fault Detection
- Advanced Computing and Algorithms
University of Electronic Science and Technology of China
2019-2025
Xidian University
2024
Southwest Jiaotong University
2024
University of Surrey
2021-2024
Gannan Medical University
2023
Sichuan University
2014-2020
Chengdu University
2019-2020
The University of Tokyo
2019
Abstract A new class of 2D transition metal carbides, carbonitrides and nitrides, termed MXenes, has emerged as a candidate for many applications in electronics, optoelectronics, energy storage. Since their first discovery 2011, MXenes have gathered increasingly more interest owing to unique physical, chemical, mechanical properties that can be tuned by different surface terminations metals. In particular, the intriguing optical electrical properties, including transparency, saturable...
Abstract Flexible devices are garnering substantial interest owing to their potential for wearable and portable applications. Here, flexible self‐powered photodetector arrays based on all‐inorganic perovskite quantum dots (QDs) reported. CsBr/KBr‐mediated CsPbBr 3 QDs possess improved surface morphology crystallinity with reduced defect densities, in comparison the pristine ones. Systematic material characterizations reveal enhanced carrier transport, photoluminescence efficiency, lifetime...
Abstract Polarized light is critical for a wide range of applications, but usually generated by filtering unpolarized light, which leads to substantial energy losses and requires additional optics. Here we demonstrate the direct emission linearly polarized from light-emitting diodes made CsPbI 3 perovskite nanoplatelet superlattices. The use solvents with different vapour pressures enables self-assembly nanoplatelets fine control over their orientation (either face-up or edge-up) therefore...
Interface engineering is imperative to boost the extraction capability in perovskite solar cells (PSCs). We propose a promising approach enhance electron mobility and charge transfer ability of tin oxide (SnO2) transport layer (ETL) by introducing two-dimensional carbide (MXene) with strong interface interaction. The MXene-modified SnO2 ETL also offers preferable growth platform for films reduced trap density. Through spatially resolved imaging technique, profoundly non-radiative...
Solution-processed MXene–perovskite image sensor arrays are realized by a top-down method, which combine desirable manufacturing advantages and state-of-the-art performance metrics.
Abstract Successful manipulation of halide perovskite surfaces is typically achieved via the interactions between modulators and perovskites. Herein, it demonstrated that a strong‐interaction surface modulator beneficial to reduce interfacial recombination losses in inverted (p‐i‐n) solar cells (IPSCs). Two organic ammonium salts are investigated, consisting 4‐hydroxyphenethylammonium iodide 2‐thiopheneethylammonium (2‐TEAI). Without thermal annealing, these two can recover photoluminescence...
Abstract P–n junctions based on 2D materials can be achieved using a selective doping technique, while such method is challenged by the complex fabrication process. Here, facile van der Waals (vdWs) structured p–n heterojunction demonstrated simply transferring an n‐type multilayer α‐In 2 Se 3 (direct bandgap) p‐type ultra‐thin WSe nanosheet. The vdWs stacked photodetector with improved type‐II band alignment not only realizes broadband spectral response from visible to near infrared...
Abstract Two‐dimensional transition metal carbides and nitrides (MXenes) show tremendous potential for optoelectronic devices due to their excellent electronic properties. Here, a high‐performance ultraviolet photodetector based on TiO 2 nanorod arrays/Ti 3 C T x MXene van der Waals (vdW) Schottky junction by all‐solution process technique is reported. The Ti modulated the Au electrode increases its work function from 4.41 5.14 eV form hole transport layer. Complemented dangling bond‐free...
Abstract Nanolasers, with small footprint and ultralow threshold, are promising for applications in data communication, on‐chip optical computing, interconnects. In addition to the microcavity design, choice of gain material is another critical factor determining performance nanolasers. 2D materials widely studied applied nanoscale optoelectronic devices due their exceptional electrical, chemical, thermal, properties caused by unique layered structures. As emerging properties, selected as...
Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing direct epitaxial growth and bonding techniques over the last few years.
Abstract The recently demonstrated Cs 3 Bi 2 I 9 single crystals (SCs) exhibit superior performance for X‐ray detection. More importantly, they do not contain any toxic lead element. However, compared with lead‐halide perovskites, one challenge the SC detection application is that it difficult to prepare large‐sized and high‐quality SCs. Here, a liquid diffused separation induced crystallization (LDSC) method employed grow SCs eliminating temperature fluctuation convection currents caused by...
Hydrogel bioelectronics has been widely used in wearable sensors, electronic skin, human-machine interfaces, and implantable tissue-electrode providing great convenience for human health, safety, education. The generation of waste from bioelectronic devices jeopardizes health the natural environment. development degradable recyclable hydrogels is recognized as a paradigm realizing next environmentally friendly sustainable bioelectronics. This review first summarizes wide range applications...
Two-dimensional (2D) molybdenum disulfide (MoS2) has emerged as a prospective candidate for photodetection. However, due to the surface defects formed during synthesis, low photoresponse of 2D MoS2 photodetectors restricts its practical applications. Here, we developed hybrid plasmonic structure that integrates MXene nanoparticles (MNPs) and MoS2. With introduction MNPs, light waves are concentrated on nanosheets via strong localized plasmon resonance. Consequently, MNPs-decorated exhibit an...
Abstract Intrinsically high attenuation of X‐rays and excellent optoelectronic properties endow Cs 3 Bi 2 I 9 with great promise for high‐performance X‐ray detectors. However, preparation quality single crystal large area millimeter‐thick remains challenging time‐consuming. A size scalable growth technology, a mechanical sintering process, which is applicable the integration in image detectors proposed this work. Compared wafer, /MXene composite wafer exhibits higher carrier transfer...
Metal oxide charge transport materials are preferable for realizing long‐term stable and potentially low‐cost perovskite solar cells (PSCs). However, due to some technical difficulties (e.g., intricate fabrication protocols, high‐temperature heating process, incompatible solvents, etc.), it is still challenging achieve efficient reliable all‐metal‐oxide‐based devices. Here, we developed inverted PSCs (IPSCs) based on solution‐processed nickel (NiO x ) tin (SnO 2 nanoparticles, working as...
We report high-power multi-junction vertical-cavity surface-emitting lasers (VCSELs) with a significantly suppressed carrier leakage issue under high injection current and temperature. By carefully optimizing the energy band structure of quaternary AlGaAsSb, we obtained 12-nm-thick AlGaAsSb electron-blocking layer (EBL) effective barrier height (∼122 meV), low compressive strain (∼0.99%), reduced electronic current. The resulting three-junction (3J) 905 nm VCSEL proposed EBL exhibits an...
Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection ranging (LiDAR). A high-performance system requires laser linewidths below 10 MHz ensure compatibility with natural linewidth (e.g., 5 cesium). However, current prevalent method reducing VCSEL relies on external cavities, which adds complexity cost devices hampers seamless...