Ignacio Figueruelo‐Campanero

ORCID: 0000-0001-5144-9375
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About
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Research Areas
  • Advanced Memory and Neural Computing
  • Photoreceptor and optogenetics research
  • Physics of Superconductivity and Magnetism
  • Neural dynamics and brain function
  • Covalent Organic Framework Applications
  • Surface and Thin Film Phenomena
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides
  • Nanoparticles: synthesis and applications
  • Electrochemical Analysis and Applications
  • Metal-Organic Frameworks: Synthesis and Applications
  • Quantum and electron transport phenomena
  • Gold and Silver Nanoparticles Synthesis and Applications
  • 2D Materials and Applications
  • Ga2O3 and related materials
  • Plasmonic and Surface Plasmon Research

Madrid Institute for Advanced Studies
2024

Universidad Complutense de Madrid
2024

Instituto de Cerámica y Vidrio
2024

Since its discovery, graphene has been one of the most prominent 2D materials due to unique properties and broad range possible applications. In particular, half-integer Quantum Hall Effect (HI-QHE) characterized by quantization resistivity as a function applied magnetic field, offers opportunities for advancements in quantum metrology understanding topological states this material. While role disorder stabilizing plateaus (QHPs) is widely recognized, precise interplay between width,...

10.48550/arxiv.2501.07518 preprint EN arXiv (Cornell University) 2025-01-13

The plasmonic response of Au nanospheres (NSs) in MCF-7 cells is investigated comparing experimental data with 3D simulations. Our findings highlight the impact NS assembly, surrounding medium, and interparticle gap on photothermal efficiency.

10.1039/d4na00247d article EN cc-by Nanoscale Advances 2024-01-01

Abstract Studying and controlling the properties of individual exfoliated materials is one first steps towards fabrication complex van der Waals systems. In this work, we present a systematic study optical micro-Raman spectroscopy on flakes high-temperature superconductor Bi 2 Sr CaCu O <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msub> <mml:mi/> <mml:mn>8</mml:mn> <mml:mo>+</mml:mo> <mml:mi>δ</mml:mi> </mml:mrow> </mml:msub> </mml:math>...

10.1088/2053-1583/ad349e article EN 2D Materials 2024-03-15

Resistive switching is the fundamental process that triggers sudden change of electrical properties in solid-state devices under action intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, nature local stochastic fluctuations drive formation metallic nuclei out insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured early-stages a...

10.48550/arxiv.2402.00747 preprint EN arXiv (Cornell University) 2024-02-01

<title>Abstract</title> Avalanche resistive switching is the fundamental process that triggers sudden change of electrical properties in solid-state devices under action intense electric fields[1]. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, memories and brain-inspired computation[1-14], nature local stochastic fluctuations drive formation metallic regions within insulating state has remained hidden. Here, using operando X-ray nano-imaging,...

10.21203/rs.3.rs-4019377/v1 preprint EN cc-by Research Square (Research Square) 2024-06-06

Avalanche resistive switching is the fundamental process that triggers sudden change of electrical properties in solid-state devices under action intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, memories and brain-inspired computation, nature local stochastic fluctuations drive formation metallic regions within insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured origin a...

10.1038/s41467-024-53726-z article EN cc-by-nc-nd Nature Communications 2024-10-31

Abstract Understanding charge transport properties of large‐area single‐layer 2D materials is crucial for the future development novel optoelectronic devices. In this work, synthesis and electrical characterization single‐layers Cu 3 BHT conjugated coordination polymers are reported. The synthesized on water surface by Langmuir‐Blodgett method then transferred to SiO 2 /Si substrates with pre‐patterned contacts. Electrical measurements revealed ohmic responses across areas up ≈1 cm , a mean...

10.1002/adfm.202416717 article EN Advanced Functional Materials 2024-11-06

Studying and controlling the properties of individual exfoliated materials is one first steps towards fabrication complex van der Waals systems. However, prolonged exposure to ambient conditions can affect very thin altering their physical properties. For this reason, it imperative employ versatile characterization strategies compatible with reduced times. In work, we demonstrate that optical microscopy Raman spectroscopy are quick non-invasive techniques study flakes high-temperature...

10.48550/arxiv.2402.12941 preprint EN arXiv (Cornell University) 2024-02-20
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