Jiecheng Cao

ORCID: 0000-0001-5236-789X
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About
Contact & Profiles
Research Areas
  • Advanced Neural Network Applications
  • Visual Attention and Saliency Detection
  • Robotics and Sensor-Based Localization
  • GaN-based semiconductor devices and materials
  • Video Surveillance and Tracking Methods
  • Advanced Vision and Imaging
  • Ga2O3 and related materials
  • Semiconductor materials and devices

Suzhou University of Science and Technology
2021-2023

Current monocular 3D object detection algorithms generally suffer from inaccurate depth estimation, which leads to reduction of accuracy. The error image-to-image generation for the stereo view is insignificant compared with gap in single-image generation. Therefore, a novel pseudo-monocular framework proposed, called Pseudo-Mono. Particularly, images are brought into detection. Firstly, taken as input, then lightweight predictor used generate map input images. Secondly, left obtained camera...

10.1109/tcsvt.2023.3237579 article EN IEEE Transactions on Circuits and Systems for Video Technology 2023-01-16

Current point-voxel fusion methods for 3D object detection could not make full use of complementary information in the field autonomous driving. Therefore, a novel two-stage method, called Accelerating Point-Voxel Representation (APVR), is proposed. The advantages Point-based feature and Voxel-based can be integrated into single representation. Thereby, proposed method retains more fine-grained an while maintaining high efficiency. Specifically, computational cost reduced by adding offsets...

10.1109/tai.2023.3237787 article EN IEEE Transactions on Artificial Intelligence 2023-01-17

In this study, the role of oxygen in AlGaN/GaN HEMTs before and after semi-on state stress were discussed. Comparing with electrical characteristics devices vacuum, air atmosphere, it is revealed that has significant influence on electric hot-carrier-stress-induced degradation device. situation gate leakage increased an order magnitude atmosphere. Double structure was used to separate barrier surface HEMT, found major influencing factor SiN-passivated stress. During electric-field-driven...

10.1088/1674-1056/ac1efd article EN Chinese Physics B 2021-08-19
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