Guofeng Hu

ORCID: 0000-0001-5246-7874
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Gas Sensing Nanomaterials and Sensors
  • ZnO doping and properties
  • Advanced Sensor and Energy Harvesting Materials
  • Perovskite Materials and Applications
  • Ga2O3 and related materials
  • 2D Materials and Applications
  • Nanowire Synthesis and Applications
  • GaN-based semiconductor devices and materials
  • Energy Load and Power Forecasting
  • Advanced Memory and Neural Computing
  • Electric Power System Optimization
  • Advanced Photocatalysis Techniques
  • Conducting polymers and applications
  • Photoreceptor and optogenetics research
  • Polymer Foaming and Composites
  • MXene and MAX Phase Materials
  • CCD and CMOS Imaging Sensors
  • Natural Fiber Reinforced Composites
  • Silicone and Siloxane Chemistry
  • Coal and Its By-products
  • Thin-Film Transistor Technologies
  • Mechanical and Optical Resonators
  • Polymer composites and self-healing
  • Transition Metal Oxide Nanomaterials
  • Cassava research and cyanide

Hong Kong University of Science and Technology
2024-2025

University of Hong Kong
2024-2025

BOE Technology Group (China)
2024

Beijing Institute of Nanoenergy and Nanosystems
2014-2023

Shenzhen University
2020-2023

Hebei Semiconductor Research Institute
2023

Xidian University
2023

Chinese Academy of Sciences
2014-2023

Wuhan Municipal Engineering Design & Research Institute
2022

Zhejiang Energy Group (China)
2022

Ga2O3 photodetectors with interdigitated electrodes have been designed and fabricated, the area exposed to illumination acts as active layer of photodetector, while covered by Au interdigital electrode provide an arena for carrier multiplication. The show a maximum responsivity at around 255 nm cutoff wavelength 260 nm, which lies in solar-blind region. photodetector reaches 17 A/W when bias voltage is 20 V, corresponds quantum efficiency 8228%, amongst best value ever reported film based...

10.1364/oe.23.013554 article EN cc-by Optics Express 2015-05-14

Abstract A strain modulated solar‐blinded photodetector (PD) based on ZnO‐Ga 2 O 3 core–shell heterojuction microwire is developed. This PD highly sensitive to deep UV light centered at 261 nm. It performs ultrahigh sensitivity and spectral selectivity, which can response rare weak (≈1.3 µw cm −2 ) almost no visible wavelength ranges. Moreover, by using the piezo‐phototronic effect, current enhanced about three times under −0.042% static strain. a way coupling effect among pizoelectric...

10.1002/adfm.201706379 article EN Advanced Functional Materials 2018-01-26

Abstract Stability is a key problem that hinders the practical application of lead halide perovskite. Therefore, all‐inorganic perovskite CsPbX 3 monocrystalline films are urgently needed to fabricate photoelectric devices. Herein, low‐temperature and substrate‐independent growth method demonstrated grow millimeter‐level inorganic thin films. These present good optical electrical properties comparable bulk ones. What more, they exhibit excellent long‐term stability toward humidity thermal...

10.1002/adma.201802110 article EN Advanced Materials 2018-09-24

Abstract Recently, piezoelectric characteristics have been a research focus for 2D materials because of their broad potential applications. Black phosphorus (BP) is monoelemental material predicted to be its highly directional properties and non‐centrosymmetric lattice structure. However, piezoelectricity hardly reported in owing lack ionic polarization, but generation consistent with the structure BP. Theoretical calculations phosphorene explained origin polarization among P atoms....

10.1002/adma.201905795 article EN Advanced Materials 2020-01-13

Tremendous work has been made recently to improve the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs); best reported value is now over 23%. However, further improving PCEs PSCs challenged by material properties, device stability, and packaging technologies. Here, we report a new approach increase flexible via introducing piezo-phototronic effect in growing an array ZnO nanowires on plastic substrates, which act as electron-transport layer for PSCs. From effect, absolute...

10.1021/acsnano.9b00125 article EN ACS Nano 2019-03-15

Abstract CsPbBr 3 shows great potential in laser applications due to its superior optoelectronic characteristics. The growth of wire arrays with well‐controlled sizes and locations is beneficial for cost‐effective largely scalable integration into on‐chip devices. Besides, dynamic modulation perovskite lasers vital practical applications. Here, monocrystalline microwire (MW) tunable widths, lengths, are successfully synthesized. These MWs could serve as high‐quality whispering‐gallery‐mode...

10.1002/adma.201900647 article EN Advanced Materials 2019-03-25

Abstract Artificial optoelectronic synapses with flexibly regulated synaptic weight are crucial to the rapidly evolved artificial visual system. Although three‐terminal devices transistor geometry have exhibited controllable response through applying electrical pulses on gate terminal, complicated device structure limits its integration array configurations. In this work, a simple two‐terminal based ZnO/Al 2 O 3 /CdS heterojunction tunable is presented. It can respond UV and green light...

10.1002/aelm.202201068 article EN cc-by Advanced Electronic Materials 2023-02-12

Herein, direct 4D printing of thermoresponsive shape memory polymers (SMPs) by the fused deposition modeling (FDM) method that enables programing 2D objects during for autonomous 2D‐to‐3D transformations via simply heating is focused on. The programming process investigated through designs and experiments. capability SMPs illustrated prestrain bending capabilities, which are highly related to settings, such as nozzle temperature, print speed, layer height, infill patterns, ratio active parts...

10.1002/adem.202300334 article EN cc-by Advanced Engineering Materials 2023-07-01

In this study, we employ first-principles calculations to explore the structural and electronic properties of monoclinic Al2O3/Ga2O3 superlattices with varied layer thickness perform a comparative analysis (AlxGa1−x)2O3 alloys. Our investigation examines lattice constants energy bandgaps both superlattice structures alloys across different Al concentrations, shedding light on intricate relationship between composition properties. The reveals that as number Al2O3 monolayers in rises from 2 6...

10.1063/5.0252684 article EN Applied Physics Letters 2025-03-01

Abstract The piezotronic effect has been extensively investigated and applied to the third generation of semiconductors. However, there currently is no effective method compatible with microelectronics techniques harness effect. In this work, a facile low‐energy‐consuming couple channel‐width gating devices developed by precisely patterning ion‐gel electrolyte on ZnO NW. ultrahigh capacitance ion gel resulting from electrical double layers allows efficient modulation charge carrier density...

10.1002/adfm.201807837 article EN Advanced Functional Materials 2019-02-06

Density functional theory was utilized to assess the influence of In alloying on spontaneous (Psp) and piezoelectric (Ppe) polarization ε-Ga2O3 heterostructures with concentrations ranging from 0% 50%. The analysis demonstrated a decrease in both Psp Ppe an increase concentration, described by equations = −9.5947x + 24.81 −0.6217x (where x represents units μC/cm2). Additionally, polarization-induced two-dimensional electron gas (2DEG) density within ε-InGaO/ε-Ga2O3 examined using...

10.1063/5.0245828 article EN Applied Physics Letters 2025-01-13

Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes physical limit on the subthreshold swing (SS), which impedes both reduction switching energy and further increase device density. negative capacitance effect proposed to rescue MOSFETs from this phenomenon called "Boltzmann tyranny". Herein, we report In2O3 nanowire (NW) with SS values in sub-60 mV/dec region, utilize ferroelectric...

10.1021/acsnano.8b05604 article EN ACS Nano 2018-09-06
Coming Soon ...