A5006532763- Graphene research and applications
- 2D Materials and Applications
- Quantum and electron transport phenomena
- MXene and MAX Phase Materials
- Surface and Thin Film Phenomena
- Dielectric materials and actuators
- Ferroelectric and Piezoelectric Materials
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Magnetic and transport properties of perovskites and related materials
- Magnetic properties of thin films
- Conducting polymers and applications
- Low-power high-performance VLSI design
- Internet of Things and Social Network Interactions
- Advanced Thermoelectric Materials and Devices
- Graphene and Nanomaterials Applications
- Nanowire Synthesis and Applications
- Tactile and Sensory Interactions
- Microwave Dielectric Ceramics Synthesis
- Robotics and Automated Systems
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Multiferroics and related materials
- Crystal Structures and Properties
- Hand Gesture Recognition Systems
University of Sargodha
2019-2025
University of Central Punjab
2020
Sejong University
2012-2020
AAA College of Engineering and Technology
2020
Yonsei University
2020
Khwaja Fareed University of Engineering and Information Technology
2018
University of Seoul
2015
Ain Shams University
2002
The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs) is still a big challenge for the future generation field effect transistors (FETs) and optoelectronic devices. Here, we report chemical doping technique achieve contact by keeping intrinsic properties few layers WS2. transfer length method has been used investigate on resistance. After doping, (Rc) multilayer (ML) WS2 reduced 0.9 kΩ·μm. significant reduction Rc mainly due high electron density, thus in...
Graphene is an air-friendly material that can be easily p-doped by oxygen; therefore, a stable, defect-free, and efficient graphene n-doping technique should developed for achieving high performance in electronic optoelectronic devices. In this study, we present unique method n-type chemical doping of monolayer grown through vapor deposition. The process thoroughly examined using X-ray photoelectron spectroscopy, Raman ultraviolet spectroscopy. findings demonstrate the use KBr solution...
Vertical integration of two dimensional (2D) layered materials is indispensable in making van der Waals (vdWs) heterostructures for promising electronic and optoelectronic devices. Herein, we report excellent electrical photoelectrical measurements where the current ON & OFF ratio FET increased by decreasing temperature graphene/ReSe2/graphene heterojunction. We investigated photoresponsivity broad spectral range (UV-Vis-NIR) achieved high 1.5 × 107 A W-1 external quantum efficiency ∼64% at...
Schematic of the HBNG nanogenerator with a micro-pyramidal structure, illustrating layers Kapton tape, Al foil, and PDMS-BaTiO 3 composite. The micropyramidal design enhances contact sensitivity, boosting output voltages under mechanical stress.
In this study, electromechanical characteristics of (1-x) Bi0.5Na0.5TiO3-xSrTiO3 (ST26, x = 0.26)/(1-y) Bi0.5Na0.5TiO3-ySrTiO3 (ST10, y 0.1) (matrix/seed) composites were studied. The ST26 (high relaxor phase) and ST10 (a ferroelectric (RF), high composite with large (r-ST26-ST10) small (t-ST26-ST10) grains exhibited frequency-related dielectric properties strain response at a low triggering electric field (an incipient piezoelectricity). It is ascribed to matrix-seed effect originating from...
We found stable n-type doping and carrier mobility improvement of graphene by using KNO<sub>3</sub> solution investigated photo-desorption current response.
Two-dimensional (2D) layered materials and their heterostructures have opened a new avenue for next-generation spintronic applications, benefited by unique electronic properties high crystallinity with an atomically flat surface. Here, we report magnetoresistance of vertical magnetic spin-valve devices multi-layer (ML) MoSe2 its few-layer graphene (FLG). We employed micro-fabrication procedure to form ultraclean ferromagnetic–non-magnetic–ferromagnetic interfaces elucidate the intrinsic...
Abstract Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, been recognized as unique features spin transport polarization. However, the magnetotransport properties SVJs are highly influenced by type intervening layer (spacer) inserted between ferromagnetic (FMs). In this situation, filtering effect at interfaces plays a critical role in observation...
We have studied the effects of antimony (Sb) doping on graphene grown by chemical vapour deposition without any significant change in its electrical properties. By increasing metal thickness from 1 to 5 nm, we found a shift wave numbers Raman G and two-dimensional (2D) peaks consistent with n-doping Fermi level into conduction band. The relative intensity D peak did not show that 2D remained at large enough number as function thickness, implying little degradation dopants. Transport...
주기적인 나노트랜치 패턴이 있는 기판 위에 놓인 CVD 그래핀의 전도특성을 측정하였다. 나노트랜치에 대해 평행한 방향과 수직한 방향 사이에 전도특성의 큰 비등방성을 발견하였다. 전기 전도의 방향이 경우, 약한 한곳모임의 특성에 있어서도 차이점이 발견되었는데, 이는 퍼텐셜 변조에 의해 생겨나는 전하밀도의 비균일성에 것으로 해석된다. We report on the measurements of electronic transport properties graphene placed a pre-patterned substrate with periodic nano trenches. A strong anisotropy has been observed between parallel and perpendicular to Characteristically different weak localization corrections have also when was trench, which is...
We report on the measurements of nonlinear current-voltage characteristics graphene fabricated by chemical vapor deposition. The characteristic is described a power law with superlinear dependence current voltage, and nonlinearity depends carrier density excitation level. strongest at Dirac point becomes weaker as increases. At point, we also observe crossover to much stronger transport when electric field increases above 104 V/m.
We have investigated carrier transport properties of chemical vapor deposited graphene placed on HfO2/Si substrate. Due to the increased charged impurity scattering originating from HfO2 substrate, mobility substrate was about 15 times lower than that SiO2 and it possible explore regime \(k_{\text{F}}l\approx 1\) even far Dirac point. The temperature dependence resistivity showed a weakly insulating behavior which can be characterized by combination diffusive thermally activated in presence...
We utilize the transfer matrix method to study electronic conductance through one-dimensional wire containing periodic potential and serial stub structures. The spectrum is analyzed compared with each other. Some essential differences are pointed out. show that a short length of stubs will produce like delta-function repeated periodically. dependence on various physical parameters could be used for fabrication new kind mesoscopic device.