A5102964652- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Aluminum Alloy Microstructure Properties
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Acoustic Wave Resonator Technologies
- Glass properties and applications
- Luminescence Properties of Advanced Materials
- Advanced ceramic materials synthesis
- nanoparticles nucleation surface interactions
- Surface Modification and Superhydrophobicity
- Concrete and Cement Materials Research
- Copper Interconnects and Reliability
- Radiation Detection and Scintillator Technologies
- Structural Behavior of Reinforced Concrete
- Lanthanide and Transition Metal Complexes
- Innovative concrete reinforcement materials
Hebei University of Technology
2023-2024
Jingdezhen Ceramic Institute
2023
Central South University
2020
Abstract At present, doping of different alkaline‐earth metal ions is mainly used to tune the emission peak europium (Eu) in glasses. However, optimization Eu‐doped glasses hindered due limited discussion on relationship between local glass network structure, concentration Eu ion dopants, and visible light by ions. In this study, we prepared two series borosilicate doped with ions, varying ratio SiO 2 B O 3 adjusting dopants obtain cyan emission. The optical properties, differential scanning...
The paper compared the tensile strength and elongation at break of cement–emulsified asphalt–standard sand (CAS) mortar asphalt–rubber particle (CAR) mortar. properties CAS CAR mortars were investigated. Microscopic analysis was carried out by Environmental Scanning Electron Microscopy Energy Dispersive Spectrometer. test results showed that 7 days improved about 9.09% higher than mortar, further increased to 17.76% 28 values 3 days, 70% those mortars. in hardened an obvious bubble...
High-quality aluminum nitride (AlN) films are considered to be the key preparation of excellent UV optoelectronic devices. In this paper, metal vapor phase epitaxy (MNVPE) and face-to-face annealing were combined study changes in crystal quality, internal stress, optical properties AlN with different V/III ratios after high-temperature theoretical explanations. X-ray diffraction was used characterize film quality. The best quality found at = 4420. After 1675 °C for 1 h, significantly...
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Aluminum nitride (AlN) is an ideal material for the preparation of devices such as deep ultraviolet light-emitting diodes (UV-LEDs) and vacuum detectors because its wide forbidden bandwidth excellent physical properties. The quality AlN films determines durability reliability these devices, gas flow rate important process parameter that films. in this paper, metal vapor phase epitaxy (MNVPE) was used to prepare on sapphire substrates. Firstly, based three-dimensional (3D) computational fluid...
Control of the growth process is important for growing high-quality AlN films. In this work, films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy(MNVPE). Interlayer was added between buffer layer and formal layer, effect V/III ratio interlayer crystalline quality, surface morphology stress evolution explored. An with proper can provide a stable transition from 3D mode to 2D mode, while high induce film separation. The optimum found be 11050, obtained under...