A5005541239- Graphene research and applications
- 2D Materials and Applications
- Quantum and electron transport phenomena
- Molecular Junctions and Nanostructures
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Magnetic properties of thin films
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Carbon Nanotubes in Composites
- Magnetism in coordination complexes
- Topological Materials and Phenomena
- Electronic and Structural Properties of Oxides
- Conducting polymers and applications
- Lanthanide and Transition Metal Complexes
- Organic Electronics and Photovoltaics
- Gas Sensing Nanomaterials and Sensors
- Advanced Condensed Matter Physics
- Multiferroics and related materials
- Surface and Thin Film Phenomena
- Anodic Oxide Films and Nanostructures
- Nanopore and Nanochannel Transport Studies
- Nanofabrication and Lithography Techniques
- Photorefractive and Nonlinear Optics
Institut de Physique et Chimie des Matériaux de Strasbourg
2016-2025
Centre National de la Recherche Scientifique
2015-2025
Université de Strasbourg
2016-2025
Institut Universitaire de France
2020-2023
Horiba (France)
2019
Institut des NanoSciences de Paris
2019
Sorbonne Université
2019
Université Paris-Saclay
2019
Université Paris-Sud
2019
Centre de Nanosciences et de Nanotechnologies
2019
Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of doping state semiconductor materials has potential to offer alternatives traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate suitability field-effect transistors (Re-FeFETs) designing nonvolatile logic-in-memory circuits with multifunctional capabilities. Modulation energy landscape within a homojunction...
Two-dimensional (2D) materials have brought fresh prospects for spintronics, as evidenced by the rapid scientific progress made in this frontier over past decade. In particular, charge perpendicular to plane vertical magnetic tunnel junctions, 2D crystals present exclusive features such atomic-level thickness control, near-perfect crystallography without dangling bonds, and novel electronic structure-guided interfaces with tunable hybridization proximity effects, which lead an entirely new...
Nanocrystals are promising building blocks for the development of low-cost infrared optoelectronics. Gating a nanocrystal film in phototransistor geometry is commonly proposed as strategy to tune signal-to-noise ratio by carefully controlling carrier density within semiconductor. However, performance improvement has so far been quite marginal. With metallic electrodes, gate dependence photocurrent follows gate-induced change dark current. Graphene presents key advantages: (i) transparency...
An opto-electronic switching device made from an evaporated spin crossover thin film over a graphene sensor is presented. The electrical transduction of both temperature and light-induced reversible transitions are demonstrated.
Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities the search for alternative device architectures toward overcoming von Neumann bottleneck. However, their implementation is still its infancy, mostly by electrical control. It of utmost interest to develop strategies additional optical and multistate control quest novel neuromorphic architectures. Here, we demonstrate polarization states field effect transistors (FeFET). The FeFETs,...
As the integration of transition metal dichalcogenides (TMDC) becomes more advanced for optoelectronics, it is increasingly relevant to develop tools that can correlate structural properties materials with their electrical output. To do so, determination electronic structure must go beyond hypothesis pristine material remain unaffected after device integration, which generates changes in dielectric environment, including electric fields are likely renormalize spectrum. Here, we demonstrate...
We investigate if the functionality of spin crossover molecules is preserved when they are assembled into an interfacial device structure. Specifically, we prepare and gold nanoparticle arrays, which room-temperature introduced, more precisely, [Fe(AcS-BPP)2](ClO4)2, where AcS-BPP = (S)-(4-{[2,6-(dipyrazol-1-yl)pyrid-4-yl]ethynyl}phenyl)ethanethioate (in short, Fe(S-BPP)2). combine three complementary experiments to characterize molecule-nanoparticle structure in detail....
Interparticle charge hopping severely limits the integration of colloidal nanocrystals films for optoelectronic device applications. We propose here to overcome this problem by using high aspect ratio interconnects made wide electrodes separated a few tens namometers, distance matching size single nanoplatelet. The semiconducting CdSe/CdS nanoplatelet coupling with such allows an efficient electron-hole pair dissociation despite large binding energy exciton, resulting in optimal...
Sub-micron-sized [Fe(Htrz)2(trz)](BF4)·H2O nanoparticles that exhibit a spin crossover transition are positioned between Au electrodes with sub-100 nm separation. After voltage poling, samples unexpected large conductivity, photoconductance and photovoltaic behavior.
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer graphene-passivated Ni film bottom ferromagnetic electrode. The devices show robust scalable tunnel magnetoresistance, with several changes sign upon varying applied bias voltage. These findings are explained by model phonon-assisted transport mechanisms that relies peculiarity band structure spin density states at hybrid graphene|Ni interface.
Abstract Narrow band gap nanocrystals offer an interesting platform for alternative design of low-cost infrared sensors. It has been demonstrated that transport in HgTe nanocrystal arrays occurs between strongly-coupled islands which charges are partly delocalized. This, combined with the scaling noise active volume film, make case device size reduction. Here, two steps optical lithography we a nanotrench effective channel length corresponds to 5–10 nanocrystals, matching carrier diffusion...
Self-doped colloidal quantum dots (CQDs) attract a strong interest for the design of new generation low-cost infrared (IR) optoelectronic devices because their tunable intraband absorption feature in mid-IR region. However, very little remains known about electronic structure which combines confinement and an inverted band structure, complicating optimized devices. We use combination IR spectroscopy photoemission to determine absolute energy levels HgSe CQDs with various sizes surface...
Charge transport in networks of nanoparticles linked by molecular spacers is investigated. Remarkably, the regime where cotunneling dominates, signature a device strongly enhanced. We demonstrate that resistance ratio identical with different increases dramatically, from an initial value 50 up to 105, upon entering regime. Our work shows intrinsic properties can be amplified through nanoscale engineering.
Room temperature optoelectronic operations are demonstrated on a hybrid device based graphene and spin crossover nanoparticles, with non-volatile multiple memory states.
Abstract Modulating the carrier density of 2D materials is pivotal to tailor their electrical properties, with novel physical phenomena expected occur at a higher doping level. Here, use ionic glass as high capacitance gate explored develop material–based phototransistor operated concentration up 5 × 10 13 cm −2 , using MoSe 2 over LaF 3 an archetypal system. Ion gating reveals be powerful technique combining electrolyte methods while enabling direct optical addressability impeded usual...
Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control multifunctional structures. However, functionalizing remains an important challenge for on-demand device–property exploitation. Here we report that electrical and fully optical way write modifications the magnetoresistive response CVD-deposited graphene is achievable through electrostatics photoferroelectric substrate. For control, ferroelectric polarization...
2D van der Waals materials and their heterostructures are a fantastic playground to explore emergent phenomena arising from electronic quantum hybridization effects. In the last decade, spin-dependant effect pushed this frontier further introducing magnetic proximity as promising tool for spintronic applications. Here uncharted proximity-controlled magnetoelectric in EuO/graphene heterostructure is unveiled. This obtained while creating new multiferroic hybrid with multifunctional...
An inverted floating gate device architecture is introduced, demonstrated with all-van-der-Waals technology, targeting both logic and neuromorphic circuits. Integrating a top polymorphic multilayer graphene improves the electrostatic coupling to ReS2 semiconductor channel by facilitating efficient dynamic conductance tuning enabling dual-mode reconfigurable memory operations. The non-volatile capability used implement compact gates for in-memory computing. also shown emulate synaptic...
In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography deposition. The electronic transport properties double side-gated nanoribbons then investigated down to 40 K interpreted simple model 1D array tunnelling junctions.
Abstract A co‐tunneling charge‐transfer process dominates the electrical properties of a nanometer‐sized “slice” in nanoparticle network, which results universal scaling conductance with temperature and bias voltage, as well enhanced spintronics properties. By designing two large (10 μm) electrodes short (60 nm) separation, access is obtained to transport dominated by charge transfer involving “nanoslices” made three nanoparticles only. Magnetic iron oxide networks exhibit magnetoresistance...
Atomically thin molybdenum diselenide (MoSe2) is an emerging two-dimensional (2D) semiconductor with significant potential for electronic, optoelectronic, spintronic applications and a common platform their possible integration. Tuning interface charge transport between such new 2D materials metallic electrodes key issue in device physics engineering. Here, we report tunable bilayer MoSe2 field effect transistors Ti/Au contacts showing high on/off ratio up to 107 at room temperature. Our...
Unique insights into magnetotransport in 20 nm ligand-free La0.67Sr0.33MnO3 perovskite nanocrystals of nearly perfect crystalline quality reveal a chemically altered 0.8 thick surface layer that triggers exceptionally large magnetoresistance at low temperature, independently the spin polarization ferromagnetic core. This discovery shows how nanoscale impacts material widely spread as electrode hybrid spintronic devices. As service to our authors and readers, this journal provides supporting...
The gating of nanocrystal films is currently driven by two approaches: either the use a dielectric such as SiO2 or electrolyte. allows fast bias sweeping over broad range temperatures but requires large operating bias. Electrolytes, thanks to capacitances, lead significant reduction are limited slow and quasi-room-temperature operation. None these conditions optimal for narrow-band-gap nanocrystal-based phototransistors, which necessary large-capacitance gate has be combined with...