A5048509169- Advanced Surface Polishing Techniques
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Diamond and Carbon-based Materials Research
- Bone Tissue Engineering Materials
- Advanced materials and composites
- Agricultural Engineering and Mechanization
- Soil Mechanics and Vehicle Dynamics
- Metal Extraction and Bioleaching
- Diverse Approaches in Healthcare and Education Studies
- Advanced machining processes and optimization
- E-commerce and Technology Innovations
- Sports Analytics and Performance
- Ultrasound and Cavitation Phenomena
- Advanced Machining and Optimization Techniques
- Nanofabrication and Lithography Techniques
- Ion-surface interactions and analysis
Hanyang University
2019-2021
The contamination behavior of ceria particles (50 and 100 nm) with oxide surfaces at pH 4 8 was studied using dipping polishing conditions. Higher than observed for cases. In contrast, conditions produced higher difference in the between could be attributed to electrostatic attraction chemical bonding. During polishing, weak or no bonding may occur 4, whereas Ce–O–Si bond form due surface charges silica 8. XPS analysis revealed that strong additional peaks related were detected O 1s spectra...
Abstract In post-chemical mechanical polishing cleaning, polyvinyl acetal (PVA) brush scrubbing is considered the most effective way to remove abrasive particles remaining on wafer surface after CMP process. During can become contaminated by abrasives, and loading cross-contaminate wafer. This study investigated effects of cleaning parameters processes cross-contamination magnitude wafers, focusing break-in process, gap distance, rotation speed, de-ionized water (DIW) rinsing, DIW supply...
Ceria removal during STI post-CMP cleaning has become a significant concern to the semiconductor industries. Understanding of ceria adhesion and mechanisms is very important. In this work, slurries at pH 4 8 were used polish oxide surfaces. Their behavior was affected by slurry varied as function methods chemistry used. Different physical (megasonic PVA brush) chemical (SC1, SPM, DHF) compared. During polishing, particles may attach surface electrostatically through Ce-O-Si bonds conditions....
Chemical mechanical planarization (CMP) is an essential step to remove overburden oxide surface and form STI (Shallow Trench Isolation) structures during the semiconductor manufacturing. This usually carried out with ceria slurry due high selectivity between nitride surfaces. However, strong adhesion a major concern, as it cannot be removed easily post-CMP cleaning step. Generally, performed by combination of physical chemical cleaning. Conventional solutions such DHF (Dilute Hydrogen...
본 연구는 축구경기를 대상으로 주어진 환경에서 필요한 정보를 획득하는 인공지능 기술의 적용방법과 획득된 정형화 하여 데이터로서의 의미를 부여하고 이를 스포츠 산업측면에서 활용하고 적용하기 위한 방안을 연구하는데 목적이 있다. 연구목적으로 승인된 실제 축구경기가 촬영된 카메라의 이미지에 기반의 인식모델을 적용하고, 가상의 축구경기장을 구현하여 통해 획득 된 데이터를 실시간으로 정형화하여 저장하고 가공하여 표현하였다. 연구 결과 축구 포메이션의 과학적 정보제공을 함으로서 팀 전술의 기술적, 인지적 분석을 경기력 향상을 기대할 수 있으며, 실시간 경기 전광판에 표출하여 팬의 흥미를 유발하거나, 유소년, 초, 중, 고등학생 선수 및 K3, K4 세미프로에 적용하여 영상분석 저변확대 산업분야의 확대에 기여할