A5088836116- Graphene research and applications
- Electronic and Structural Properties of Oxides
- Quantum and electron transport phenomena
- Magnetic and transport properties of perovskites and related materials
- 2D Materials and Applications
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Carbon Nanotubes in Composites
- Diamond and Carbon-based Materials Research
- Advanced Condensed Matter Physics
- Advanced X-ray and CT Imaging
- Topological Materials and Phenomena
- Acoustic Wave Resonator Technologies
- Power Transformer Diagnostics and Insulation
- Mechanical and Optical Resonators
- Atomic and Subatomic Physics Research
- MXene and MAX Phase Materials
- Advanced Sensor and Energy Harvesting Materials
- Molecular Junctions and Nanostructures
- Fluid Dynamics and Thin Films
- Spectroscopy and Quantum Chemical Studies
- Thermal properties of materials
- Nanopore and Nanochannel Transport Studies
- Advanced Physical and Chemical Molecular Interactions
- Nuclear Structure and Function
Tel Aviv University
2011-2025
University of Manchester
2015-2019
Henry Royce Institute
2015-2019
Beijing Graphene Institute
2018
Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2015
Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above the temperature of liquid nitrogen. Under these conditions, electrons can behave as viscous and exhibit hydrodynamic phenomena similar classical liquids. Here we report strong evidence for this transport regime. We found that doped graphene exhibits an anomalous (negative) voltage drop near...
Many layered materials can be cleaved down to individual atomic planes, similar graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation potential applications. Here we introduce remedial approach based on cleavage, transfer, alignment, encapsulation air-sensitive crystals, all inside controlled inert atmosphere. To illustrate the technology, choose two archetypal two-dimensional...
The superconducting transition temperature T{c} of the SrTiO{3}/LaAlO{3} interface was varied by electric field effect. anisotropy upper critical and normal-state magnetotransport were studied as a function gate voltage. spin-orbit coupling energy epsilon{SO} is extracted. This tunable scale used to explain strong dependence mobility anomalous Hall signal observed. Epsilon{SO} follows for range under study.
Materials subjected to a magnetic field exhibit the Hall effect, phenomenon studied and understood in fine detail. Here we report qualitative breach of this classical behavior electron systems with high viscosity. The viscous fluid graphene is found respond non-quantizing fields by producing an electric opposite that generated effect. contribution large identified studying local voltages arise vicinity current-injecting contacts. We analyze anomaly over wide range temperatures carrier...
Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated transport in solids. Here we report on direct observation the transition to this long-sought-for state matter high-mobility system graphene. Unexpectedly, flow is found be interaction-dominated but non-hydrodynamic (quasiballistic) wide temperature range, showing signatures viscous flows only at relatively high temperatures. The between two regimes characterized by sharp maximum negative resistance, probed...
Abstract Spontaneous electric polarization is recently observed in multilayered van der Waals stacked materials, arising from a symmetry breaking unit cell with two or more constituent species, non‐centrosymmetric intra‐layer atom displacement single‐atom‐species materials. Here, it shown that even elemental crystals, consisting of one type and composed non‐polar centrosymmetric layers, exhibit if arranged an appropriate three‐dimensional architecture. This concept demonstrated here for...
Quantum magnetic oscillations in SrTiO3/\LaAlO3 interface are observed. The evolution of their frequency and amplitude at various gate voltages temperatures is studied. data consistent with the Shubnikov de-Haas theory. Hall resistivity rho exhibits nonlinearity low field. It fitted assuming multiple carrier contributions. comparison between mobile density inferred from oscillation suggests valley spin degeneracy. small discussed framework band scenario.
Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization magneto-oscillatory behavior their properties. Cryogenic temperatures are usually required observe these oscillations. We show that graphene superlattices support a different type quantum oscillations do not rely on quantization. The extremely robust persist well above room temperature magnetic fields only few T. attribute this phenomenon repetitive changes the electronic structure such experience...
Abstract Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields as radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those allow fine control over the motion on atomic scale because of self-alignment mechanisms forces acting level. Such machines produce well-controlled movements a reaction to small changes external parameters. Here we demonstrate that, for system...
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large 0.2 eV. However, these rarely lead a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle usually explained charge inhomogeneity. Here we investigate spatial distributions proximity-induced superconducting currents gapped and, also, compare measurements Hall bar and Corbino geometries normal...
Despite their ionic nature, many layered diatomic crystals avoid internal electric polarization by forming a centrosymmetric lattice at optimal anti-parallel van-der-Waals stacking. Here, we report stable ferroelectric order emerging the interface between two naturally-grown flakes of hexagonal-boron-nitride, which are stacked together in metastable non-centrosymmetric parallel orientation. We observe alternating domains inverted normal polarization, caused lateral shift one site domains....
Abstract Van der Waals polytypes of broken inversion and mirror symmetries have been recently shown to exhibit switchable electric polarization even at the ultimate two‐layer thin limit. Their out‐of‐plane has found accumulate in a ladder‐like fashion with each successive layer, offering 2D building blocks for bottom‐up construction 3D ferroelectrics. Here, it is demonstrated experimentally that beyond critical stack thickness, accumulated rhombohedral molybdenum disulfide saturates. The...
Watching electrons lose steam in graphene Although can be fabricated to extremely clean, it still has a nonzero electrical resistance. Resistance is associated with turning electrons' energy into heat, but how exactly does this happen? Halbertal et al. used tiny scanning temperature probe based on superconducting quantum interference device investigate problem. As the current flowed through square-shaped sample of graphene, lost predominantly vicinity atomic-scale defects, which were few and...
Abstract The interface between the two band insulators SrTiO 3 and LaAlO has unexpected properties of a two-dimensional electron gas. It is even superconducting with transition temperature, T c , that can be tuned using gate bias V g which controls number electrons added or removed from interface. bias–temperature ( ) phase diagram characterized by dome-shaped region where superconductivity occurs, is, non-monotonic dependence on similar to many unconventional superconductors. Here, we...
The sheet resistance as a function of temperature, magnetic field and its orientation for atomically flat ${\text{SrTiO}}_{3}/{\text{LaAlO}}_{3}$ interfaces with carrier densities $\ensuremath{\sim}3\ifmmode\times\else\texttimes\fi{}{10}^{13}\text{ }{\text{cm}}^{\ensuremath{-}2}$ is reported. At low fields superconductivity observed below 130 mK. temperature dependence the high magnetoresistance strong anisotropy suggest possible ordering 35 K. origin this relation to are discussed.
We report the observation of weak magnetism in superlattices LaAlO3/SrTiO3 using beta-detected nuclear magnetic resonance. The spin lattice relaxation rate 8 Li with a spacer layers and 6 unit cells LaAlO3 exhibits strong peak near ~35 K, whereas no such is observed superlattice layer thickness 3 cells. attribute temperature dependence to slowing down weakly coupled electronic moments at interface. These results show that interface depends strongly on layer, minimal ~4-6 required for...