A5012438782- GaN-based semiconductor devices and materials
- Thermal properties of materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Thermal Radiation and Cooling Technologies
- Silicone and Siloxane Chemistry
- Bone Tissue Engineering Materials
- Ga2O3 and related materials
- Advanced Sensor and Energy Harvesting Materials
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Thermal Expansion and Ionic Conductivity
- Quantum Dots Synthesis And Properties
- Boron and Carbon Nanomaterials Research
Linköping University
2019-2023
Universidad Autónoma de Madrid
2016-2019
Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for development homoepitaxy. We propose new approach grow high-quality homoepitaxial in N2-rich carrier gas and at higher supersaturation as compared heteroepitaxy. develop low-temperature an optimum nucleation scheme based on evolution thermal stability surface under different compositions...
Ti-doped ZnO thin films were obtained with the aim of tailoring film bioadhesiveness and making optoelectronic properties materials transferable to biological environments. The prepared on silicon substrates by sol-gel spin-coating subsequent annealing. A Ti-O segregation limits crystallite growth creates a buffer out-layer. Consequently, presents slightly increased resistivity, which remains in order 10-3 Ω·cm. strong biochemical interference Zn2+ ions released from pure surfaces was...
Thermal conductivity of AlxGa1−xN layers with 0≤x≤0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements a modified Callaway model. We find reduction in the thermal more than one order magnitude compared to that GaN, which indicates strong effect phonon-alloy scattering. It shown short-mean free path phonons are strongly scattered, leads major contribution long-mean conductivity. In thin layers, become efficiently scattered boundaries, resulting...
${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}$ ternary alloys are emerging ultrawide band gap semiconductor materials for high-power electronics applications. The heat dissipation, which mainly depends on the thermal conductivity of constituent material in device structures, is key performance and reliability. However, reports very limited. Here, we present a comprehensive study entire Al composition range. Thick layers grown by metal-organic chemical vapor deposition...
In this work, we present the fabrication and investigation of properties quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates influence a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For 1- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>...
Herein, the potential of reformed GaN nanowires (NWs) fabricated by metalorganic chemical vapor deposition (MOCVD) for device‐quality low‐defect density templates and low‐cost alternative to bulk substrates is demonstrated. The effects epilayer thickness NW reformation conditions on crystalline quality thermal conductivity subsequent epilayers are investigated. Smooth surfaces with atomically step‐like morphologies no spirals achieved templates, indicating step‐flow growth mode. It further...
In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length 550 nm. The devices fin widths around 100 nm reveal normally- OFF behavior subthreshold swings (SSs) very close to 60-mV/dec limit. Low hysteresis values indicate low defect densities at oxide/GaN interface. exhibit specific ON-resistances maximum 90 V breakdown voltage, which is reasonable for drift layer thickness <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
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