A5033172135- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Copper-based nanomaterials and applications
- solar cell performance optimization
- Silicon and Solar Cell Technologies
- ZnO doping and properties
- Semiconductor materials and interfaces
- Magnetic and transport properties of perovskites and related materials
- Organic Electronics and Photovoltaics
- Heusler alloys: electronic and magnetic properties
- Semiconductor Quantum Structures and Devices
- Advanced Thermoelectric Materials and Devices
- Organic Light-Emitting Diodes Research
- Quantum and electron transport phenomena
- Conducting polymers and applications
- Magnetic Field Sensors Techniques
- Solid-state spectroscopy and crystallography
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
Loughborough University
2017-2025
Renewable Energy Systems (United Kingdom)
2018-2025
Centre for Research in Engineering Surface Technology
2017-2019
Magnesium-doped Zinc Oxide (MZO) films have recently been proposed as a transparent buffer layer for thin film CdTe solar cells. In this study, the band gap of MZO layers was tuned cells by increasing substrate temperature during deposition. Films were deposited radio-frequency magnetron sputtering. Devices incorporating an optimised at 300 °C with 3.70 eV yielded mean efficiency 12.5% and highest 13.3%. Transmission electron microscopy showed that are uniformly on conductive oxide (TCO)...
Spray coating is an industrially mature technique used to deposit thin films that combines high throughput with the ability coat nonplanar surfaces. Here, we explore use of ultrasonic spray fabricate perovskite solar cells (PSCs) over rigid, surfaces without problems caused by solution dewetting and subsequent "run-off". Encouragingly, find PSCs can be spray-coated using our processes onto glass substrates held at angles inclination up 45° away from horizontal, such devices having comparable...
Abstract The front buffer layer plays an important role in CdSeTe/CdTe solar cells and helps achieve high conversion efficiencies. Incorporating ZnO layers the device structure has led to highly efficient stable cells. In this study, optimization of for is reported. films are radio frequency sputter‐deposited on SnO 2 :F coated soda‐lime glass substrates. substrate temperature deposition varied from 22 500 °C. An efficiency 20.74% achieved using deposited at 100 thickness between 40 nm 75...
The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe<sub>2</sub> formation. This enabled longer selenization time, enhanced grain growth and performance.
Abstract Poor crystallinity, high degree of porosity and rough surfaces are the main drawbacks solution‐processed CIGS absorbers resulting in lower power conversion efficiencies when compared to vacuum‐based solar cells. Therefore, promoting absorber grain growth is key further improve solution‐based cell performance. The effect alkali elements such as Na generally recognised have beneficial effects not only on opto‐electronic properties but also growth. In this work, thermal evaporation a...
Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in is due to Se alloying the CdTe absorbers form a CdSeTe/CdTe structure. subsequent band gap grading increases short circuit current density. can be introduced by depositing precursor thin of either CdSe or CdSeTe alloy and then diffusing into during temperature cadmium chloride activation process. Using preferred because it easier control concentration. However, fabrication devices,...
Abstract In this study, the use of intrinsic and highly insulating ZnO buffer layers to achieve high conversion efficiencies in CdSeTe/CdTe solar cells is reported. The are deposited on commercial SnO 2 :F coated soda‐lime glass substrates then fabricated into arsenic‐doped devices using an absorber back contact by First Solar. thickness varied from 30 200 nm. incorporating a 50 nm layer achieved efficiency 21.23% without anti‐reflection coating. An improved 21.44% obtained substrate with...
Metastable behavior in highly efficient MZO/CdSeTe/CdTe solar cells has been reported previously. Different preconditioning procedures have studied that are used to recover the performance of devices. 11 wt% MgO content MZO layer shown give optimized photovoltaic parameters device compared other compositions. <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i> – xmlns:xlink="http://www.w3.org/1999/xlink">V</i> characteristics before devices...
Oxygen content during sputtering affects the characteristics of nickel oxide and was studied as a back buffer layer in cadmium telluride solar cells. Simulated valence band offsets outline ideal value range are compared to measurements.
High-efficiency perovskite solar cells are reliant on lead-based materials, which causes toxicity issues for large-scale implementation.
Cu2ZnSnS(e)4 deposited using solution processes has potential for terrawatt-scale deployment. The champion highest efficiency Cu2ZnSn(S, Se)4 cell published in literature is spin-coated the highly dangerous hydrazine which an impractically scalable solvent and deposition combination. As alternative amine-thiol mixtures have shown to complex with a wide range of binary chalcogenides much lower health risks than hydrazine. Herein we present two further toxicity reductions, first by employing...
Integrating photovoltaic devices onto the surface of carbon-fiber-reinforced polymer substrates should create materials with high mechanical strength that are also able to generate electrical power. Such anticipated find ready applications as structural, energy-harvesting systems in both automotive and aeronautical sectors. Here, fabrication triple-cation perovskite n-i-p solar cells planarized is demonstrated, utilizing a transparent top ITO contact. These contain "wrinkled" SiO
Thin film cadmium telluride (CdTe) photovoltaics (PV) is the most successful second-generation PV technology, with a current installed capacity of over 30 GWp, predominantly at utility scale. Recent improvements in buffer layer device, switching from sulphide (CdS) to transparent magnesium-doped zinc oxide (MZO), tin (SnO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula> ),...
This study investigated an approach to control the MoSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer formation at Mo/CIGS interface of hydrazine-free solution-processed CIGS solar cells. The thickness reduction was achieved by deposition a MoN xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> back contact barrier layer, which effectively acts as diffusion against selenium (Se). resulting Mo/MoN /Mo multilayer applied in device...
This work examines the effects of post-deposition air-annealing on electronic properties solution-processed heterojunction CIGS solar cells. The annealing in air CIGS/CdS interface was found to have positive device performance with an increase all PV parameters even after times as short 5 min. A VOC <; 130 mV caused by reduced surface and grain boundary recombination through passivation Se deficiencies oxygen atoms. Prolonged causes charge redistribution diffusion mobile elements such Cu Cd...
SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The then incorporated into Cu-doped CdSeTe/CdTe devices a range CdCl <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> activation treatments and CuCl2 annealing temperatures to determine the effects layer on device performance. Results show that all fabricated with thinner resulted in much...
Incorporating transparent n-type buffer layers in the CdTe photovoltaic device structure has led to significant efficiency improvements. In this study, we report on use of ZnO achieve high efficiencies. The 50 nm and 100 thick were deposited 3.8 mm NSG TEC™ 15 glass substrates then fabricated into arsenic doped CdSeTe/CdTe devices using First Solar's absorber. incorporating layer achieved an 19.5 % without addition anti-reflective coating. Results show that highly efficient based are stable...
Thin film cadmium telluride (CdTe) photovoltaics (PV) is the most successful second generation PV technology, with a current market share of ~5 % and deployment predominantly at utility scale. Improvements in buffer layer device, switching from sulphide (CdS) to tin oxide (SnO2) or magnesium-doped zinc (MZO), addition selenium absorber layer, have expanded wavelength range over which CdTe devices operate, 400-850nm 350-900nm, resulting increased efficiency. As result, an optimised...