A5036131695- Phase-change materials and chalcogenides
- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Optical properties and cooling technologies in crystalline materials
- Topological Materials and Phenomena
- Solid-state spectroscopy and crystallography
- Chemical Thermodynamics and Molecular Structure
- Crystal Structures and Properties
- 2D Materials and Applications
- Thermodynamic and Structural Properties of Metals and Alloys
- Rare-earth and actinide compounds
- Inorganic Chemistry and Materials
- Graphene research and applications
- Advanced Condensed Matter Physics
- Mineralogy and Gemology Studies
- nanoparticles nucleation surface interactions
- Intermetallics and Advanced Alloy Properties
- Thermal Expansion and Ionic Conductivity
- Magnetic and transport properties of perovskites and related materials
- Thermal properties of materials
- Shape Memory Alloy Transformations
- Catalysis and Oxidation Reactions
- Iron-based superconductors research
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
Baku State University
2016-2025
Institute of Catalysis and Petrochemistry
2014-2025
Azerbaijan State University of Economics
2024-2025
Azerbaijan National Academy of Sciences
2014-2023
Boreskov Institute of Catalysis
2022-2023
Azerbaijan State Oil and Industry University
2020-2022
Ganja State University
2019-2021
Donostia International Physics Center
2014
Institute of Problems of Chemical Physics
2009
G.V. Kurdyumov Institute for Metal Physics
2003
Quantum states of matter combining non-trivial topology and magnetism attract a lot attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall axion insulator phases. Feasibility many novel phenomena that \emph{intrinsic} TIs may host depends crucially our ability to engineer efficiently tune their electronic structures. Here, using angle- spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report large...
Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character bulk wave functions. Allowing electrons to move along their surface, but not through inside, they emerged as an intriguing material platform for exploration exotic physical phenomena, somehow resembling graphene Dirac-cone physics, well exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and computing....
Abstract We study the surface crystalline and electronic structures of antiferromagnetic topological insulator MnBi 2 Te 4 using scanning tunneling microscopy/spectroscopy (STM/S), micro( μ )-laser angle-resolved photoemission spectroscopy (ARPES), density functional theory calculations. Our STM images reveal native point defects at that we identify as Bi antisites Mn substitutions. Bulk X-ray diffraction further evidences presence Mn-Bi intermixing. Overall, our characterizations suggest...
BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data UV soft x-ray regime that clearly disentangle surface from electronic structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent surfaces show identical structures, thus clarifying state character. Soft ARPES reveal spindle-torus shape of Fermi surface, induced by...
We have investigated plasmonic excitations at the surface of Bi_{2}Se_{3}(0001) via high-resolution electron energy loss spectroscopy. For low parallel momentum transfer q_{∥}, spectrum shows a distinctive feature peaked 104 meV. This mode varies weakly with q_{∥}. The behavior its intensity as function primary and scattering angle indicates that it is plasmon. At larger momenta (q_{∥}~0.04 Å^{-1}), an additional peak, attributed to Dirac plasmon, becomes clearly defined in spectrum....
In this work, we employed angle resolved photoemission spectroscopy (ARPES) to analyze the temperature dependent changes in electronic structure of first antiferromagnetic topological insulator MnBi2Te4 upon crossing Néel TN ≈ 25 K. We observed an exchange splitting bulk conduction band, which has a power law dependence on (1−T/T0)2β with onset T0 well matching measured TN. found evolution surface states integrated spectral weight vicinity Dirac point. Furthermore, additional quasi-2D state...
Abstract Modification of the gap at Dirac point (DP) in axion antiferromagnetic topological insulator $${\hbox {MnBi}}_2 {\hbox {Te}}_4$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mtext>MnBi</mml:mtext> <mml:mn>2</mml:mn> </mml:msub> <mml:mtext>Te</mml:mtext> <mml:mn>4</mml:mn> </mml:mrow> </mml:math> and its electronic spin structure have been studied by angle- spin-resolved photoemission spectroscopy (ARPES) under laser excitation various...
Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number related phenomena at elevated temperatures. An important characteristic making this material attractive applications is its predicted large magnetic gap Dirac point (DP). However, while early experimental measurements reported on DP gaps, recent studies claimed to observe gapless dispersion cone. Here, using...
Topological insulators are a promising class of materials for applications in the field spintronics. New perspectives this can arise from interfacing metal–organic molecules with topological insulator spin-momentum locked surface states, which be perturbed enhancing or suppressing spintronics-relevant properties such as spin coherence. Here we show results an angle-resolved photemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM) study prototypical cobalt phthalocyanine...
We report the discovery of a temperature-induced phase transition between α and β structures antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains α-antimonene having different orientations with respect to substrate. During mild annealing, grows prevails over phase, eventually forming single domain that perfectly matches surface lattice structure selenide. First-principles thermodynamics calculations this van der Waals heterostructure explain...
Spin polarization of a topological surface state for GeBi${}_{2}$Te${}_{4}$, the newly discovered three-dimensional insulator, has been studied by means state-of-the-art spin- and angle-resolved photoemission spectroscopy. It revealed that disorder in crystal minor effect on surface-state spin polarization, which is $70%$ near Dirac point bulk energy gap region ($\ensuremath{\sim}$180 meV). This finding promises not only to realize highly spin-polarized surface-isolated transport but also...
Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at surface of ${\text{SnSb}}_{2}$${\text{Te}}_{4}$, a $p$-type topological insulator. The Dirac point is found $0.32\ifmmode\pm\else\textpm\fi{}0.03$ eV above Fermi level. Electrons from conduction band minimum are scattered on time scale $43\ifmmode\pm\else\textpm\fi{}4$ fs cone. From there they decay partly depleted valence with constant $78\ifmmode\pm\else\textpm\fi{}5$ fs. significant...
By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence multiple coexisting Dirac surface states at zone-center reciprocal space, displaying distinct dispersion, different constant energy contours, and point energies. We also provide Rashba-like split close to Fermi level, deeper M- V-shaped bands with states. The experimental findings are in agreement...
We report first-principles $GW$ results on the dispersion of bulk band-gap edges in three-dimensional topological insulator ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$. find that, independently reference density-functional-theory band structure and crystal-lattice parameters used, one-shot corrections enlarge fundamental gap, bringing its value close agreement with experiment. conclude that cause displacement valence-band maximum (VBM) to $\mathrm{\ensuremath{\Gamma}}$ point, ensuring surface-state...
Abstract The control of dielectric permittivity and conductivity is a crucial factor in the development certain electronic components. Materials based on layered structures polyvinyl alcohol (PVA) show great potential for applications supercapacitors. Therefore, creation polymer composites semiconductors determination their physical properties significant. In this investigation, composite comprising 1 wt% FeGaInS 4 dispersed PVA was synthesized through mechanical mixing, where crystal...