A5001456027- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Copper-based nanomaterials and applications
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Boron and Carbon Nanomaterials Research
Kyoto Katsura Hospital
2023-2024
Kyoto University
2019-2024
This study demonstrates that bond strength can be enhanced by injecting excess electrons or holes into a material electron beam irradiation. To determine the effect of electrons/holes on interatomic strength, fracture toughness tests were performed single-crystal Si micropillars under various electron-beam irradiation conditions. The was 4%–11% higher than non-irradiated In particular, an increase in large hole-injection Furthermore, first-principles calculations tensile electrons/hole-doped...
Brittle fracture of a covalent material is ultimately governed by the strength electronic bonds. Recently, attempts have been made to alter mechanical properties including excess electron/hole doping. However, underlying mechanics/mechanism how these doped electrons/holes interact with bond and changes its yet be revealed. Here, we perform first-principles density-functional theory calculations clarify effect on bonding Si. We demonstrate that Si decreases or increases monotonically in...
The fracture of brittle materials is ultimately governed by the strength interatomic bonds. It has been reported that changes in structure and mechanical properties are caused doping excess electrons / holes into Si, Ge, etc. This suggests doped may change bonding governs materials. In this study, first-principles analysis revealed bonds electron hole-doped Si from viewpoint ideal strength. lattice constant increases linearly with concentration. decreases concentration electron-doped while...
The fracture of brittle materials is ultimately governed by the strength interatomic bonds. It has been reported that changes in structure and mechanical properties are caused doping excess electrons / holes into Si, Ge, etc. This suggests doped may change bonding governs materials. In this study, first-principles analysis revealed bonds electron hole-doped Si from viewpoint ideal strength. lattice constant increases linearly with concentration. decreases concentration electron-doped while...