A5086881901- Radio Frequency Integrated Circuit Design
- Advancements in PLL and VCO Technologies
- Ultra-Wideband Communications Technology
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Microwave Engineering and Waveguides
- Photonic and Optical Devices
- Analog and Mixed-Signal Circuit Design
- Antenna Design and Analysis
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Semiconductor Lasers and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Wireless Body Area Networks
- Optical Network Technologies
- 3D IC and TSV technologies
- Advanced Photonic Communication Systems
- Radiation Effects in Electronics
- Silicon Nanostructures and Photoluminescence
- Acoustic Wave Resonator Technologies
- Microwave Imaging and Scattering Analysis
- Millimeter-Wave Propagation and Modeling
- Microwave and Dielectric Measurement Techniques
- Nanowire Synthesis and Applications
Leibniz Institute for Neurobiology
2014-2024
Leibniz Institute for High Performance Microelectronics
2014-2023
Technische Universität Berlin
2016
Institut für Solartechnologien (Germany)
2006-2015
Leibniz Association
2013-2015
Nordex (Germany)
2012
Seoul Semiconductor (South Korea)
1996
An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous developments originates primarily from an optimized vertical profile, additional decrease the base emitter resistance which made possible by combining millisecond annealing with low-temperature backend, lateral device scaling.
This paper presents the design and measurements of a 32-Gb/s differential-input differential-output transimpedance amplifier (TIA) employed in dual polarization integrated coherent receivers for 100-Gb Ethernet. A circuit technique is shown that uses replica TIA to stabilize operating point two shunt-feedback input stages as well cancel dc part complementary currents balances their offset. The can be operated modes, an automatic gain control mode retain good total harmonic distortion (THD)...
This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of Rx is 31 GHz. At Gb/s, achieves sensitivity <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$-3~{\rm dBm}$</tex></formula> average optical input power with BER...
A frequency synthesizer combining a relatively large tuning range (4.12-4.72 GHz) with low noise sensitivity is presented. stable fine-tuning loop combined an unstable coarse-tuning in parallel. As result, phase-locked (PLL) wide and moderate level of reference spurs obtained. By adding resistorless loop, the was increased by factor four no penalty terms phase noise, spurs, settling speed. Also, additional chip area power consumption are negligible. The CMOS PLL circuit fabricated 0.25-μm...
Long-haul optical links are experiencing a transition to coherent techniques because they enable the use of modulation with high spectral efficiency, such as QPSK and QAM [1], which in turn require highly linear low-noise optical-electrical front-ends. To cope ever-growing demand for data rates consumer market, Ethernet standard long-haul is moving soon from 100 400Gb/s. A possible candidate symbol rate reach this bit using complex formats 64Gbaud.
A 0.13 mum SiGe BiCMOS technology for millimeter wave applications is presented. This features high-speed HBTs (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =240 GHz, f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> =330 BV xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> =1.7 V) along with high-voltage =50 =130 =3.7 integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise...
This paper presents the theoretical and experimental results on phase noise spectrum rms frequency error of a fractional-N phase-locked loop (PLL) under frequency-modulated continuous-wave (FMCW) chirp generation. The modulation is analytically calculated for second-order charge pump PLL with feedback divider ratio linearly changing over time. followed by an analysis steady-state output after settling achieved during A integrated ramp generator presented. Phase jitter measurements are...
This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset in a 0.13μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, harmonic transceiver, software linearization (SWL) circuits and digital interface. has been tested low-cost package, where the antennas are integrated. Above 100GHz, our transceiver achieved state-ofthe-art integration level receiver linearity, DC power consumption.
We report on x-ray diffraction measurements of the substitutional carbon content y in pseudomorphic Si1−yCy (y&lt;0.02) layers grown (100)-oriented silicon substrate. The samples were by molecular beam epitaxy and investigated during post growth annealing situ an powder diffractometer. Despite tensile strain 100-nm-thick high supersaturation, stable up to 800 °C. Beyond this temperature range, decreased exponentially isothermal annealing. This effect can be explained precipitation...
We investigated in detail the strain relaxation behaviour of metastable tensile-strained epilayers on Si(001) by comparing layers before and after an annealing step using a variety different diagnostic methods. The dominant strain-relieving mechanism is formation carbon-containing interstitial complexes and/or silicon carbide nanoparticles, similar to carbon under thermodynamical equilibrium conditions (concentrations below solid bulk solubility limit). did not observe any out-diffusion. To...
This article presents a fully integrated modular wideband frequency interleaving (FI) transmitter and receiver for high data rate communication applications. At the side, three independent in-phase quadrature-phase (IQ) baseband channels are upconverted to different intermediate frequencies (IFs) then interleaved. interleaved signals downconverted separated back each channel. Single-ended inputs outputs utilized reduce pin count, more practical realization higher potential toward future...
This paper describes a monolithic integrated transceiver chipset intended for impulse radio (IR) Ultra-wide band (UWB) applications including indoor communication and localization. The operates in the higher UWB centered at 7.68 GHz it is optimized pulse bandwidth of about 1.5 GHz. average repetition rate 60 MHz an octagonal position modulation (8-PPM) allow raw data rates up to 180 MBit/sec. available high used precise localization employing dedicated time-of-arrival (TOA) measurement...
We present a broadband flip-chip approach for the hetero-integration of indium phosphide based chiplets on BiCMOS carrier. To accommodate limited temperature budget, process temperatures are kept below 200°C in order to not degrade device performance. Using soldering together with pillar-based instead common bump array technique ensures good scalability, repeatability and flexibility terms complex transitions. The RF performance this transitions was evaluated using standard 50Ω microstrip...
In this paper, a general circuit design methodology for space applications is presented with an 8-bit resistive DAC XY addressing mode and BiCMOS buffer designed in SiGe technology. Circuit-level simulations are performed to evaluate the radiation tolerance of DAC. Simulations show that even though core immune effects, auxiliary circuits highly susceptible analog single-event transients (ASETs). mitigation techniques addressed, resulting estimated be 60 MeVcm <sup...
An integrated pulse based ultra-wide-band (UWB) transceiver front-end is presented in this paper. The generator produces Gaussian modulated pulses satisfying Federal Communication Commission spectral mask with possibility for binary-phase shift keying modulation. generated have a bandwidth of 2 GHz from 3.1 to 5.1 GHz. receiver consists an UWB low-noise amplifier (LNA). transmit and receive paths are chosen by transmit/receive (T/R) switch. generator, T/R switch the LNA on single chip...
This work reports on a 130 nm BiCMOS technology with high-speed SiGe:C HBTs featuring transit frequency of 255 GHz and maximum oscillation 315 at an emitter area 0.17 x 0.53 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A minimum gate delay 3.0 ps was achieved for CML ring oscillators. Breakdown voltages the are measured to be BV <sub xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> =1.8 V,...
A power combined wideband amplifier (PA) covering the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$J$ </tex-math></inline-formula> -band (220–320 GHz) is presented in 130-nm BiCMOS technology. The input split by two cascaded 1-to-2 splitters with amplification stages in-between. four signals drive output stages, which have their outputs within a 4-way zero-degree combiner. splitting and combining...
By means of long-term mixed-mode stress tests high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This saturation the aging rate as a time and current is applicable all relevant conditions this HBT type. Additionally, 1000h on high-voltage revealed that not only but even reversal possible in long run.
In this paper, a fractional-N phase-locked loop (PLL) with an integrated chirp generation circuit block for frequency-modulated continuous-wave (FMCW) radar systems is reported. The composed of push-push voltage controlled oscillator (VCO), feedback divider including pre-scaler and programmable stages, phase-frequency detector followed by current steering charge pump, sigma-delta modulator (SDM) 18-bit resolution, generator serial-peripheral-interface (SPI) programming the generator....
This paper describes a monolithic integrated non-coherent receiver intended for impulse radio (IR) Ultra-wide band (UWB) applications including indoor communication and localization. The operates in the higher UWB centered at 7.68 GHz it is optimized pulse bandwidth of about 1.5 GHz. overall gain amplification chain can be set up to 56 dB 16 steps via digital 4-bit interface. A dedicated ldquoleading edgerdquo-detector supports precise localization conjunction with an appropriate...
A speed optimization scheme for static frequency dividers based on master-slave flip-flops is presented. As a proof of the concept, design divide by two divider in 0.13 μm SiGe BiCMOS technology (with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> gt; 300 GHz and xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 450 GHz) reported. The circuit exhibits highest self-oscillation (SOF) 111.6 among existing dividers. With singleended...
The annealing behavior of pseudomorphic Si0.603Ge0.397/Si and Si0.597Ge0.391C0.012/Si superlattice structures was studied in the temperature range between 750 °C 900 °C. Carbon incorporation 1.2% changes thermal stability SiGe significantly. It suppresses plastic relaxation due to an effective dislocation pinning. No SiGeC sample observed during up 875 for 3 h. For comparison relaxed at 800 strongly increases interdiffusion Ge Si. activation energy this diffusion process a content 40%...
This brief presents a fully integrated integer-N frequency synthesizer with frequency-tuning range from 2.4 to 2.9 GHz and root-mean-square (rms) jitter below 2.5 ps over 350 MHz. The employed architecture using an inductance-capacitance (L-C) oscillator two control inputs combines wide tuning low noise sensitivity. Potential applications include clock generation in microprocessors recovery fiberoptic receivers.
This paper describes the extension to a noncoherent impulse radio (IR) ultra-wide band (UWB) transceiver for precise time-of-arrival (TOA) measurements. The provides time resolution of 260 picoseconds, which allows indoor localization. concept this is especially dedicated known drawbacks energy detection (non-coherent) receivers. discussion implementation issues reveals that employment differential emitter- coupled-logic (ECL) circuitry in BiCMOS design good candidate achieve expected...