A5029477844- Graphene research and applications
- 2D Materials and Applications
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- MXene and MAX Phase Materials
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advancements in Battery Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Molecular Junctions and Nanostructures
- Plasmonic and Surface Plasmon Research
- Carbon Nanotubes in Composites
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and interfaces
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
- 3D IC and TSV technologies
- Advancements in Photolithography Techniques
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Additive Manufacturing and 3D Printing Technologies
- Electronic Packaging and Soldering Technologies
- Silicon Nanostructures and Photoluminescence
- Quantum and electron transport phenomena
IMEC
2015-2024
KU Leuven
2002-2016
Graphene and two-dimensional materials (2DM) remain an active field of research in science engineering over 15 years after the first reports 2DM. The vast amount available data high performance device demonstrators leave little doubt about potential 2DM for applications electronics, photonics sensing. So where are integrated chips enabled products? We try to answer this by summarizing main challenges opportunities that have thus far prevented applications. related (2D) remained fifteen...
Abstract High performance integrated optical modulators are highly desired for future interconnects. The ultra‐high bandwidth and broadband operation potentially offered by graphene based electro‐absorption has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate true potential such illustrate with experimental results silicon modulator capable 10 Gb/s modulation speed. measured agree very well theoretical predictions. A low insertion loss...
We report for the first time demonstration of 3D integrated circuits obtained by die-to-die stacking using Cu Through Silicon Vias (TSV). The TSV process is inserted between contact and M1 our reference 0.13 mum CMOS on 200 mm wafers. top die thinned down to 25 bonded landing wafer Cu-Cu thermo-compression. Both wafers contain finished at M2 evaluate impact both FEOL BEOL. results confirm no degradation performance. functionality various ring oscillator topologies that include inverters...
This paper presents a new integration scheme to fabricate Si/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.55</sub> Ge xmlns:xlink="http://www.w3.org/1999/xlink">0.45</sub> heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. 1- μm length on excess of 20 μA/μm at VGS=VDS=1.2 V. Low-temperature measurements, performed suppress trap-assisted (TAT), reveal the point...
Atomically thin MoSe<sub>2</sub> films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, sizable semiconductor band gap for use in nanoelectronics.
The importance of statistical analyses on 2D materials-based electronic devices and circuits is sometimes overlooked. Here the authors discuss most pressing integration issues for such emphasize need yield, variability, reliability, stability benchmarking, outline viable strategies resulting in research papers that are useful industry.
To keep Moore's law alive, 2D materials are considered as a replacement for Si in advanced nodes due to their atomic thickness, which offers superior performance at nm dimensions. In addition, natural candidates monolithic integration opens the door density scaling along 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> dimension reasonable cost. This paper highlights obstacles and paths scaled CMOS solution. The baseline requirements...
Large area MoS 2 films with tunable physical‐chemical properties are grown on dielectric substrates by annealing of ultrathin Mo layers in the presence a sulfur‐containing gaseous precursor. Different growth conditions found to have significant impact material properties, including chemical composition, roughness, and grain sizes, thus shedding light critical parameters that govern sulfurization processes for synthesis large 2D transition metal dichalcogenides. Optimized combination use...
In view of its epitaxial seeding capability, c-plane single crystalline sapphire represents one the most enticing, industry-compatible templates to realize manufacturable deposition two-dimensional transition metal dichalcogenides (MX2) for functional, ultrascaled, nanoelectronic devices beyond silicon. Despite being atomically flat, surface topography, structure, and chemical termination vary between terraces during fabrication process. To date, it remains poorly understood how these...
Ultrathin LiMn2O4 electrode layers with average crystal size of ∼15 nm were fabricated by means radio frequency sputtering. Cycling behavior and rate performance was evaluated galvanostatic charge discharge measurements. The thinnest films show the highest volumetric capacity best cycling stability, retaining initial over 70 (dis)charging cycles when manganese dissolution is prevented. increased stability for film thicknesses below 50 allows in both 4 3 V potential regions, resulting a high...
This paper presents a new integration scheme for complementary hetero-junction vertical Tunnel FETs (VTFETs), whereby sacrificial source layer is used during the device fabrication and replaced by final hetero-source materials, respectively n- or p-TFETs, thereby minimizing thermal budget applied to junctions. With demonstration of this source-replacement-last module Ge n-TFET, we show that it possible grow highly doped hetero-junctions on Si channel with steep doping profiles without...
Chemical vapor deposition (CVD) is widely considered to be the most economically viable method produce graphene for high-end applications. However, this technique typically yields undesired grain boundaries in crystals, which drastically increases sheet resistance of layer. These are mostly caused by polycrystalline nature catalytic template that commonly used. Therefore, prevent presence it crucial develop a large scale, single-crystalline template. In paper, we demonstrate Cu(111) film on...
The H<sub>2</sub>S sulfurization of metal and oxide molybdenum films the H<sub>2</sub> influence on their morphology is described.
One current key challenge in graphene research is to tune its charge carrier concentration, i.e., p- and n-type doping of graphene. An attractive approach this respect offered by controlled via well-ordered self-assembled networks physisorbed on the surface. We report tunable using alkyl-amines that have varying chain lengths. The magnitude modulated controlling density strong amine groups As revealed scanning tunneling atomic force microscopy, governed length alkyl which acts as a spacer...
Despite the fact that two-dimensional MoS2 films continue to be of interest for novel device concepts and beyond silicon technologies, there is still a lack understanding on carrier injection at metal/MoS2 interface effective mitigation contact resistance. In this work, we develop semi-classical model identify main mechanisms trajectories contacts. The proposed successfully captures experimentally observed behavior overall electrical field effect transistors. Using model, evaluate different...
The key steps of a transfer two-dimensional (2D) materials are the delamination as-grown material from growth substrate and lamination 2D on target substrate. In state-of-the-art experiments, these remain very challenging, variations often result in unreliable properties. Here, it is demonstrated that interfacial water can insert between graphene its despite hydrophobic behavior graphene. It understood essential for an electrochemistry-based Pt surface. Additionally, to wafer hindered by...
The rapid cadence of MOSFET scaling is stimulating the development new technologies and accelerating introduction semiconducting materials as silicon alternative. In this context, 2D with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature optoelectronic mechanical properties. scalable synthesis techniques obviously fundamental step towards manufacturable technology. Metal-organic chemical vapor deposition has...
For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one greatest challenges is realization doping and comprehension its mechanisms. Low-temperature atomic layer deposition aluminum oxide found to n-dope MoS2 ReS2 but not WS2. Based on electrical, optical, chemical analyses, we propose validate a hypothesis explain mechanism. Doping ascribed donor states in band gap AlxOy, which donate electrons or not, based alignment...
Despite rapid progress in 2D molybdenum disulfide (MoS2) research recent years, MoS2 field-effect transistors (FETs) still suffer from a high metal-to-MoS2 contact resistance and low intrinsic mobility, which are major hindrances to their future application. We report an efficient technique dope thin-film FETs using poly(vinyl-alcohol) (PVA) polymeric coating. This results reduction of the by up 30% as well channel 20 kΩ sq-1. Using dehydration process, we were able effectively control...