A5006538977- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Semiconductor Lasers and Optical Devices
- solar cell performance optimization
- Silicon Carbide Semiconductor Technologies
- Advanced Surface Polishing Techniques
- Advanced Photonic Communication Systems
- Electron and X-Ray Spectroscopy Techniques
- 3D IC and TSV technologies
- Optical Network Technologies
- X-ray Diffraction in Crystallography
- Advanced MEMS and NEMS Technologies
- Crystallization and Solubility Studies
- Neuroscience and Neural Engineering
- Radio Frequency Integrated Circuit Design
- Chalcogenide Semiconductor Thin Films
- Ion-surface interactions and analysis
IMEC
2016-2025
Ghent University
2018-2024
Imec the Netherlands
2003-2023
Umicore (Belgium)
2023
Fraunhofer Institute for Solar Energy Systems
2023
KU Leuven
2010-2021
University of Antwerp
2019
Aalto University
2019
Shizuoka University
2018
Centro de Investigación de Métodos Computacionales
2014
By covering a metal ground plane with periodic surface texture, we can alter its electromagnetic properties. The impedance of this metasurface be modeled as parallel resonant circuit, sheet inductance L, and capacitance C. reflection phase varies frequency from +/spl pi/ to -/spl pi/, crosses through 0 at the LC resonance frequency, where behaves an artificial magnetic conductor. incorporating varactor diodes into have built tunable surface, in which applied bias voltage controls phase. We...
A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown a silicon substrate is demonstrated. Photodetection up to 2.2µm achieved responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as function the GeSn/Ge heterostructure parameters. This work demonstrates that heterostructures can be used developed SOI waveguide integrated photodetectors short-wave infrared applications.
In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped Ge substrates with Sn contents up 8%. Those stay after 30 min anneal in N2 at 500 °C; Ge-Sn interdiffusion is seen °C but not lower temperature. 100% active GeSn:B a concentration 1.7 × 1019 cm−3. provides slightly Hall hole mobility values than pure p-type especially for low...
Abstract We illustrate the important trade-off between far-field scattering effects, which have potential to provide increased optical path length over broad bands and parasitic absorption due excitation of localized surface plasmon resonances in metal nanoparticle arrays. Via detailed comparison photocurrent enhancements given by Au, Ag Al nanostructures on thin-film GaAs devices we reveal that losses can be mitigated through a careful choice medium. Absorption at resonance Au structures...
This paper presents a new integration scheme to fabricate Si/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.55</sub> Ge xmlns:xlink="http://www.w3.org/1999/xlink">0.45</sub> heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. 1- μm length on excess of 20 μA/μm at VGS=VDS=1.2 V. Low-temperature measurements, performed suppress trap-assisted (TAT), reveal the point...
In this letter, we describe the use of a germanium-on-silicon waveguide platform to realize an arrayed grating (AWG) operating in 5 μm wavelength range, which can be used as multiplexer for mid-infrared (midIR) light engines or core element midIR spectrometer. Ge-on-Si losses range 2.5-3.5 dB/cm TE polarized and 3-4 TM 5.15-5.4 are reported. A 200 GHz channel spacing 5-channel AWG with insertion loss/crosstalk 2.5/3.1 dB 20/16 polarization, respectively, is demonstrated.
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well integration of III-V semiconductors, IV-VI colloidal nanoparticles GeSn alloys on these increasing functionality. The strong nonlinearity silicon combined with low nonlinear absorption in mid-infrared is exploited to generate picosecond pulse based...
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in range 6.4–12.6 at.%. A positive deviation from Vegard's law was observed a new experimental bowing parameter extracted for GeSn: bGeSn = 0.041 Å (in excellent agreement recent theoretical predictions). The critical thickness strain relaxation as function concentration determined, resulting significantly higher values than those predicted by equilibrium models....
Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic require 700 mW of power for a 2π shift. The required is brought down to 80 by complete undercut using focused ion beam. Finally an efficient shifter on germanium SOI platform. A tuning (for shift) 105 achieved Ge-on-SOI structure which lowered 16 free standing shifter.
We describe a reconfigurable microwave surface that performs as new kind of beam steering reflector. The is textured with an array tiny resonators, which provide frequency-dependent impedance. By tuning the individual impedance, and thus reflection coefficient phase, can be varied function position across Using phase gradient, steer reflected beam. As example, we have built simple mechanically tuned in physical motion only 1/100 wavelength generates sufficient gradient to by /spl plusmn/16...
Comparison of digital and analog figures-of-merit FinFETs planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that possess following key advantages over MOSFETs: reduced leakage, excellent subthreshold slope, better voltage gain without degradation noise or linearity. This makes them attractive for low-frequency RF applications around 5 GHz, where performance-power important. On other hand, high-frequency applications, are seen to hold advantage due...
Integrating high electron mobility III–V materials on an existing Si based CMOS processing platform is considered as a main stepping stone to increase the performance and continue scaling trend. Owing polar nature of versus nonpolar Si, antiphase boundaries (APBs) arise in epitaxially grown Si. Here, we demonstrate approach restrict generation APBs by selectively depositing material narrow Si-trenches formed within shallow trench isolation (STI) patterned Si(001) wafers. Based detailed...
In this paper we present our recent work on mid-infrared photonic integrated circuits for spectroscopic sensing applications.We discuss the use of silicon-based purpose and detail how a variety optical functions in besides passive waveguiding filtering can be realized, either relying nonlinear optics or integration other materials such as GaSb-based compound semiconductors, GeSn epitaxy PbS colloidal nanoparticles.©2013 Optical Society America
Presents an introduction to the optical control of array antennas by using fiber optic links for remote and a photonic time shift network wide instantaneous bandwidth. An overview development wideband conformal designed airborne surveillance radars is given. The paper covers system design performance L-band (850-1400 MHz) M-element controlled photonics. Packaging techniques components aperture are discussed. highlighted. A nano-second impulse response has been measured demonstrate 50%...
Strain relaxation in large lattice-mismatched epitaxial films, such as Ge and III-V materials on Si, introduces high threading dislocation densities (TDDs). A thermodynamic model of TDD dependence film thickness is developed. According to this model, the quasiequilibrium a given strain-relaxed scales down with inverse square its thickness. The TDDs both GaAs films follow consistently. Our predicts lowest possible Si (100), which determined by glide activation energy
Further improving complementary metal oxide semiconductor performance beyond the 22 nm generation likely requires use of high mobility channel materials, such as Ge for p-type (pMOS) and III/V n-type devices. The integration both materials on Si substrates can be realized with selective epitaxial growth. We present two fabrication schemes virtual using wafers standard shallow trench isolation (STI). This reduces cost these complicated scheme in blanket omitted. low topography enables...
To cope with the growing needs in research towards understanding of cellular function and network dynamics, advanced micro-electrode arrays (MEAs) based on integrated complementary metal oxide semiconductor (CMOS) circuits have been increasingly reported. Although such contain a large number sensors for recording and/or stimulation, size electrodes these chips are often larger than typical mammalian cell. Therefore, true single-cell stimulation remains challenging. Single-cell resolution can...
Mid-infrared wavelength (de)multiplexers based on planar concave gratings (PCGs) fabricated a germanium-on-silicon waveguide platform are presented. PCGs with two different types of (flat facet and distributed bragg reflectors) analyzed for both transverse electric (TE) magnetic (TM) polarizations. The insertion loss cross talk flat found to be −7.6/−6.4 dB 27/21 TE/TM polarization. For reflector the −4.9/−4.2 22/23
This paper presents a new integration scheme for complementary hetero-junction vertical Tunnel FETs (VTFETs), whereby sacrificial source layer is used during the device fabrication and replaced by final hetero-source materials, respectively n- or p-TFETs, thereby minimizing thermal budget applied to junctions. With demonstration of this source-replacement-last module Ge n-TFET, we show that it possible grow highly doped hetero-junctions on Si channel with steep doping profiles without...
This paper reports on 45-nm fin pitch strained p-type Ge gate-all-around devices fabricated 300-mm SiGe strain-relaxed-buffers (SRB). By improving the process integration flow, excellent electrical performance is demonstrated: Q factor increased to 25 as compared our previous work, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> = 500 μA/ μm at xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> 100 nA/μm achieved, approaching best...