A5102992036- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Metal and Thin Film Mechanics
- ZnO doping and properties
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Acoustic Wave Resonator Technologies
- Semiconductor Lasers and Optical Devices
- Optical Coatings and Gratings
- Electron and X-Ray Spectroscopy Techniques
- Anodic Oxide Films and Nanostructures
- Silicon Nanostructures and Photoluminescence
- Technology Assessment and Management
- Advanced Semiconductor Detectors and Materials
- Diamond and Carbon-based Materials Research
- 3D IC and TSV technologies
IMEC
2016-2025
Imec the Netherlands
2022
Photonics (United States)
2022
Universidade de São Paulo
2016
KU Leuven
2015-2016
Universidade Estadual Paulista (Unesp)
2016
Moscow Institute of Thermal Technology
2013
CACI International (United Kingdom)
2007-2010
Soitec (France)
2010
Institut Marcel Mauss
2008
We report on an integration approach of III/V nano ridges patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches different widths (≤500 nm) were processed in a oxide (SiO2) layer top 300 mm (001) Si substrate. The MOVPE growth conditions chosen way to guarantee efficient defect trapping within narrow trenches and form box shaped ridge with increased volume when growing out the trench. Compressively strained InGaAs/GaAs multi-quantum wells 19% indium deposited...
We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high 1.5 MV/cm. These fields, resulting from the interplay of piezoelectric and spontaneous polarizations well barrier layers due to Fermi level alignment, induce large redshifts photoluminescence energy position dramatically increase carrier lifetime thickness increases.
We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, resistor-transistor logic (RTL) co-integrated, compatible with p-GaN technology. Based these achievements, 200 V HEMT...
This paper reports on 45-nm fin pitch strained p-type Ge gate-all-around devices fabricated 300-mm SiGe strain-relaxed-buffers (SRB). By improving the process integration flow, excellent electrical performance is demonstrated: Q factor increased to 25 as compared our previous work, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> = 500 μA/ μm at xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> 100 nA/μm achieved, approaching best...
Strained Ge p-channel gate-all-around (GAA) devices with Si-passivation are demonstrated on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers. While single horizontal nanowire (NW) demonstrated, the process flow described in this paper can be adjusted to make vertically stacked NWs increase drive per footprint. The short-channel have round 9-nm diameter and GAA smallest channel gate dimensions (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Abstract-This letter experimentally demonstrates 1.2 kV normally-off p-GaN gate lateral high-electronmobility transistors (HEMTs) on 200 mm diameter engineered substrates. The fabricated HEMT with optimum gate-drain spacing exhibits a threshold voltage (Vth) of 3.2 V, an ON/OFF ratio 108, low specific ON-resistance (Ron,sp) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.8 \mathrm{~m}...
Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high‐energy electron‐diffraction studies on MgTe atomic deposition, together with x‐ray diffraction, high‐resolution transmission electron microscopy, and photoluminescence experiments ALE‐grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 monolayer/ALE cycle can be achieved in a substrate temperature range between 260 300°C. New values of zinc‐blende lattice...
Selective area growth by metal organic vapor phase epitaxy of III/V nano ridges on patterned (001) Si substrates was investigated applying different conditions. The deposition mismatched materials in narrow oxide trenches leads to an efficient defect trapping at the trench side walls whereas out allows for a clear ridge formation with increased volume. evolution depends strongly chosen parameters as well mask pattern. InGaAs/GaAs and InGaP/GaAs hetero-structures were integrated box shaped...
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs realization nano-ridge (NR) laser diodes and heterojunction bipolar transistors 300 mm wafers. In this report we extend NRE GaSb narrow bandgap heterostructures Si. deposited by selective area growth in oxide trenches fabricated substrates reduce defect density aspect ratio trapping. The continued NR...
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to ternary alloy InGaAs. This allows controlling fundamental lattice constant fully relaxed which thereby serves tunable base integration diverse device hetero-layers. To demonstrate flexibility this approach, we realized an O-band laser containing three In0.45Ga0.55As quantum wells,...
Highly-reflective GaN/GaAlN quarter-wave Bragg mirrors, designed to be centered at blue/green wavelengths, have been grown by molecular beam epitaxy. The reflectivity for a mirror 473 nm was as high 93% and the bandwidth reached 22 nm. Detailed x-ray diffraction measurements allowed us characterize structural parameters of mirrors. We show that, in spite substantial strain relaxation occurring our samples, is still possible. In addition, we that growth interruption heterointerfaces crucial...
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time high density 45nm Fin pitch using a replacement channel approach Si substrate. In comparison to our previous work isolated sGe [1], 14/16nm technology node compatible modules such as metal gate and germanide-free local interconnect were implemented. The I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I...
The indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied means of reflection high-energy electron diffraction (RHEED) intensity oscillations. It demonstrated that, addition to being incorporated the alloy, acts as a surfactant, significantly changing gallium incorporation. This surfactant effect has be taken into account allow for precise situ determination alloy composition. concentrations determined RHEED oscillations were found good agreement...
We observe in $\mathrm{GaN}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}$ quantum wells with varying aluminum concentration strong electric fields whose amplitudes are significantly larger than those observed before comparable structures fabricated at higher growth temperatures. show that the measured clearly stronger what is expected based on piezoelectric effects alone, which constitutes a direct experimental proof of existence important spontaneous polarization...
Abstract After a short description of the evolution metal-oxide-semiconductor device architectures and corresponding requirements on epitaxial growth processes, manuscript describes material properties complicated Si/SiGe multi-layer stacks used for complementary field effect transistor (CFET) devices. They contain two different Ge concentrations have been grown using conventional process gases. A relatively high temperature is to obtain acceptable Si SiGe rates. Still island has suppressed...
AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-μm and total periphery 300 μm, exhibits maximum drain current density 925 mA/mm at V/sub GS/=0 V DS/=5 an extrinsic transconductance (g/sub m/) about 250 mS/mm. At 10 GHz, output power 1.9 W/mm associated to power-added efficiency 18% linear gain 16 dB achieved bias 30 V. To our knowledge, these results represent the highest ever reported this frequency GaN HEMT...
In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown &gt;1200 V. The manufacturability opens doors to high voltage GaN-based power such as in electric cars. Key achieving is careful engineering complex material stack combination use substrates. CMOS-fab friendly have coefficient thermal expansion (CTE) that closely matches CTE GaN/AlGaN layers, paving...
In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CBO</sub> , 10 V is achieved. The emitter-base base-collector diodes show an ideality factor ~1.2 ~1.4, respectively. This demonstration shows the potential for enabling hybrid III-V CMOS/ technology 5G mm-wave applications, not limited to GaAs but which can also be...
As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained stacked channels 3D-integrated devices have for instance been introduced this purpose. A common requirement these technologies is a strict limitation in thermal budgets preserve the integrity of already present on chips. We our latest developments low-temperature epitaxial growth processes, ranging from channel source/drain...
In this letter we examine an influence of surface morphology on yellow and edge emissions in wurtzite phase GaN. Our cathodoluminescence measurements show that the emission does not correlate with morphology, but simultaneously “edge” shows very strong spatial fluctuations. The observed effect is attributed to granular structures GaN films enhancement interface region.
Selective area growth of InGaAs inside highly confined trenches on a pre-patterned (001) Si substrate has the potential achieving high III-V crystal quality due to aspect ratio trapping for improved device functionalities in microelectronics. If trench width is range hetero-layer thickness, relaxation mechanism mismatched layer no longer isotropic, which strong impact fabrication and performance if not controlled well. The hetero-epitaxial nucleation InxGa1-xAs can be simplified by using...
This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices passive components further supports the GaN ICs platform. These results significantly contribute to monolithic integration for create key opportunities...
Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) FinFET and Gate All Around devices. We use Si4H10 as precursor it enables epitaxial growth at temperatures down 330°C. C-V characteristics blanket capacitors made on virtual substrates point presence an optimal thickness. In case compressively strained fin structures, results non-uniform high strain levels fin. These have been calculated for different shapes function The is...