Sen Wang

ORCID: 0000-0001-6216-6995
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About
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Research Areas
  • Supercapacitor Materials and Fabrication
  • Luminescence Properties of Advanced Materials
  • Microwave Dielectric Ceramics Synthesis
  • Recycling and Waste Management Techniques
  • Silicon Nanostructures and Photoluminescence
  • Advanced Sensor and Energy Harvesting Materials
  • Nanoporous metals and alloys
  • Anodic Oxide Films and Nanostructures
  • Quantum-Dot Cellular Automata
  • Thin-Film Transistor Technologies
  • Photonic and Optical Devices
  • MXene and MAX Phase Materials
  • Advancements in Battery Materials
  • Extraction and Separation Processes
  • Near-Field Optical Microscopy
  • Fluid Dynamics and Thin Films
  • Metallurgical Processes and Thermodynamics
  • Conducting polymers and applications
  • Adsorption and biosorption for pollutant removal
  • Nanofabrication and Lithography Techniques
  • Solidification and crystal growth phenomena
  • Nuclear materials and radiation effects
  • Optical Coatings and Gratings
  • Graphene research and applications
  • 2D Materials and Applications

Henan Polytechnic University
2023

Institute of Physics
2020

University of Chinese Academy of Sciences
2017-2020

Chinese Academy of Sciences
2020

Huazhong University of Science and Technology
2014

Taiyuan University of Technology
2009

The emerging smart power source-unitized electronics represent an utmost innovative paradigm requiring dramatic alteration from materials to device assembly and integration. However, traditional sources with huge bottlenecks on the design performance cannot keep pace revolutionized progress of shape-confirmable integrated circuits. Here, we demonstrate a versatile printable technology fabricate arbitrary-shaped, graphene-based planar sandwich supercapacitors based layer-structured film...

10.1021/acsnano.6b08435 article EN ACS Nano 2017-02-03

Interfacial integration of a shape-engineered electrode with strongly bonded current collector is the key for minimizing both ionic and electronic resistance then developing high-power supercapacitors. Herein, we demonstrated construction micro-supercapacitors (VG-MSCs) based on high-density unidirectional arrays vertically aligned graphene (VG) nanosheets, derived from thermally decomposed SiC substrate. The as-grown VG showed standing basal plane orientation grown (0001̅) substrate,...

10.1021/acsnano.7b00553 article EN ACS Nano 2017-03-25

A simple lithographic method is developed to generate large-area antireflective subwavelength structures (SWSs), in which the metal island films are used as masks. Using magnetron sputter deposition, stochastically arranged Ag islands were fabricated on Si substrates with dimensions controlled range of 50∼400nm. After reactive ion etching CF4, SWSs formed, same arrangement and density those islands. The measured reflectivity was decreased from ∼40% for polished ∼5% SWS surfaces. residual...

10.1063/1.2767990 article EN Applied Physics Letters 2007-08-06

A type of red luminescent Sr3Al2O6:Eu2+, Dy3+ phosphor powder is synthesised by sol–gel–combustion processing, with metal nitrates used as the source ions and citric acid a chelating agent ions. By tracing formation process sol–gel, it found that necessary to reduce amount NO−3 dropping ethanol into solution for forming stable homogeneous sol–gel. Thermogravimetric Differential Scanning Calorimeter Analysis, x-ray diffractionmeter, scanning electron microscopy photoluminescence spectroscopy...

10.1088/1674-1056/18/10/071 article EN Chinese Physics B 2009-09-29

Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult control, prone contamination, and unscalable. Here, we report on the transfer-free direct growth high-quality graphene nanoribbons (GNRs) h-BN stacks. The...

10.48550/arxiv.2403.11465 preprint EN arXiv (Cornell University) 2024-03-18

In this paper, a virtual GeSi template has been successfully fabricated by Ge filling the porous silicon (PSi) prepared electrochemical etching (EC etching). The microstructure quality measured with cross-sectional scanning electron microscopy and photoluminescence spectra reveal that PSi structure is fully filled uniformly distributed Ge. Furthermore, Raman X-ray diffraction results also show typical feature, which originates from interdiffusion during deposition. This design can be...

10.35848/1347-4065/ab86ff article EN Japanese Journal of Applied Physics 2020-04-06

Abstract Melt flows in the Kyropoulos sapphire growth system include Marangoni convection and buoyancy convection. From seeding stage to final stage, both area of free surface melt height decrease zero from initial values, hence flow pattern varies during growth. To study systematically its influence on process, a non-dimensional parameter is introduced denote relative strength Temperature stream function distributions for different stages are simulated. It found that negligible early...

10.3139/146.111107 article EN International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde) 2014-07-11
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