Skyrmion imaging and electrical detection via topological Hall (TH) effect are two primary techniques for probing magnetic skyrmions, which hold promise next-generation storage. However, these kinds of complementary have rarely been employed to investigate the same samples. We report observation nanoscale skyrmions in SrIrO3/SrRuO3 (SIO/SRO) bilayers a wide temperature range from 10 100 K. The SIO/SRO exhibit remarkable TH effect, is up 200% larger than anomalous (AH) at 5 K, zero-field 90...

In a step towards routinely achieving 10 nm spatial resolution with magnetic force microscopy, we have developed robust method for active tip–sample distance control based on frequency modulation of the cantilever oscillation. It allows us to keep well-defined order within better than precision throughout measurement even in presence energy dissipative processes, and is adequate single-passage non-contact operation vacuum. The excited mechanically phase-locked loop oscillate at constant...

The converse magnetoelectric (ME) coupling of a La0.7Sr0.3MnO3 (LSMO) thin film, deposited on piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) single crystal substrate by the pulsed laser deposition (PLD) technique, was investigated magneto-optical Kerr effect (MOKE) system. Because nature PMN–PT, strain status LSMO film is tunable electric field applied substrate, as it well-known that Manganite has very strong electron–phonon interaction; thus, magnetic property change function external can...

A series of (100−x)NiO/(x)NiFe2O4 nanocomposites (x = 0, 2.5, 5, 8.3, 12.5, 25) synthesized by a chemical coprecipitation method have been investigated. The exchange bias field HE the reaches maximum at x and then decreases with increasing x. decrease is attributed to formation isolated ferrimagnetic NiFe2O4 clusters, which confirmed observation use high resolution transmission electron microscopy. temperature dependence coercivity HC for pure NiO different from those other samples, due...

Unconventional exchange bias (EB) has been studied in CoCr2O4/Cr2O3 nanocomposites, which the Curie temperature of ferrimagnetic CoCr2O4 is much lower than Néel antiferromagnetic Cr2O3. A negative EB field about 2.5 kOe at 5 K achieved upon cooling a 30 kOe. Meanwhile, coercivity nanoparticles enhanced significantly by coupling with The effect on and 10 also investigated. domain-state model used to interpret unconventional EB. Cooling may play decisive role creation interfacial spin...

The structure, phase components, and magnetic properties of antiferromagnetic coupled Fe2O3 NiO nanocomposites have been investigated. A negative exchange bias field about 2kOe the anomalous shape hysteresis loop are observed, which may be related to uncompensated pinned spins at interface between ferrimagnetic phases in powders. Furthermore, varies with strength cooling field, HE 0.76kOe is observed antiferromagnetic-antiferromagnetic system.

Contemporary spintronics devices, notably giant and tunnel magnetoresistance sensors with high linear ranges, stand to benefit from large bias fields in excess of 1 T that have been observed exchange-coupled double layers using rare earth–transition metal ferrimagnets as pinning layers. However, before the strong coupling can be exploited, reversal process must understood at scales smallest where it would effective. Little is known about these processes date because technical difficulty...

A single-passage, bimodal magnetic force microscopy technique optimized for scanning samples with arbitrary topography is discussed. double phase-locked loop system used to mechanically excite a high quality factor cantilever under vacuum conditions on its first mode and via an oscillatory tip-sample potential second mode. The obtained oscillation amplitude then as proxy the distance, control thereof. With appropriate z-feedback parameters, two data sets reflecting interaction sample are...

Giant exchange bias shifts of several Tesla have been reported in ferrimagnetic/ferromagnetic bilayer systems, which could be highly beneficial for contemporary high energy density permanent magnets and spintronic devices. However, the lack microscopic studies reversal owing to difficulty measuring few nanometer-wide magnetic structures fields precludes assessment lateral size inhomogeneity relation intended application. In this study, process nanoscale exchange-coupled consisting a...

Magnetic properties and microstructure of directly quenched Nd9.5Fe72.5−yTi2.5Zr0.5CryB15−xCx (x=0–1; y=0–3) magnets with a diameter 1.1 mm length 15 have been investigated. The thermomagnetic analysis show that the bulk x≦0.5 y=0–3 mainly consist magnetically hard 2:14:1 phase. Besides, slight substitution C for B Cr Fe in Nd9.5Fe72.5Ti2.5Zr0.5B15 can effectively refine grain size magnet larger diameter, resulting remarkable enhancement magnetic properties. optimal Br=5.9 kG, Hic=8.2 kOe,...

A class of artifacts manifesting as soft magnetic components are revealed from magnetometry measurements rare earth-transition metal (TbFe) thin films prepared by magnetron sputtering. They not inherent to TbFe, but a direct result the manner in which substrates mounted prior sample fabrication, with material deposited at substrate sides giving rise significant moment. The authors find same also be present earth-free [Co/Pt] multilayers. Trying supress appearance this type artifact has an...

Modulation of the magnetic anisotropy by electric field in epitaxial Fe3O4/PMN–PT multiferroic heterostructure is studied, which shows that coercive Fe3O4 thin films can be decreased from 368 to 113 Oe applying an PMN–PT [011] direction. Meanwhile, most shift ferromagnetic resonance (FMR) Hr () reach up −483 external field. The giant 251 9681 obtained as sample rotated θ = 90° (H // 0° [100]) when was applied heterostructure.

The geometric characterization of low-voltage dielectric electro-active polymer (EAP) structures, comprised nanometer thickness but areas square centimeters, for applications such as artificial sphincters requires methods with precision. Direct optical detection is usually restricted to sub-micrometer resolution because the wavelength light applied. Therefore, we propose take advantage cantilever bending system readout revealing a at deflection free end. It demonstrated that this approach...

We have studied the structural and magnetic properties of enhanced-permeability-dielectric FeCo/Al2O3-multilayer thin films deposited on 8"-Si wafers in an industrial magnetron sputtering system. The EPD-multilayers consist 25 periods alternating nanometer-thick FeCo-layers by DC from a Fe60Co40 target Al2O3-interlayers RF Al2O3 target. tuned these varying thickness 1.1nm to 2.1nm, while remained unchanged (3.5nm). formation layers disconnected FeCo-nanoparticles separated Al2O3-matrix was...

Bulk Bi0.5Sr0.5Fe0.5Cr0.5O3 (BSFCO) is a new compound comprising the R3c structure. The structural, magnetic property and exchange bias (EB) details are investigated. material was in super-paramagnetic (SP) state at room temperature. Exchange usually occurs boundary between different states after field cooling (HFC) acts on sample. Here result shows that changing HFC from 1 to 6 T reduces HEB value by 16% 2 K same time. Meanwhile, diminishes as ferromagnetic layer thickness increases....

The direct digital frequency synthesis (DDS) technology has high resolution, fast switching, low phase noise and higher stability, so it is widely used in communications, aerospace, instrumentation other fields. In this paper, the DDS system was designed based on Field Programmable Gate Array (FPGA) hardware design language (VHDL). experimental simulation results show that stable output frequency, accuracy, adjustable phase.

On-chip voltage regulators employing high-frequency micro-machined power inductors based on integrated thin-film soft magnetic cores are a promising path for replacing the bulky, slow and inefficient off-chip regulators. Yet, fabricating these remains technologically economically very challenging, since low-loss with thickness of at least several micrometers operating high frequencies (10-100 MHz) need to be complementary metal-oxide-semiconductor (CMOS) compatible process conversion...