A5044774333- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- Ion-surface interactions and analysis
- Organic Electronics and Photovoltaics
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Electron and X-Ray Spectroscopy Techniques
- Diamond and Carbon-based Materials Research
- Photocathodes and Microchannel Plates
- Radiation Detection and Scintillator Technologies
- Magnetic properties of thin films
- Metallic Glasses and Amorphous Alloys
- Liquid Crystal Research Advancements
- Magnetism in coordination complexes
Brookhaven National Laboratory
2025
Amity University
2019-2022
The development of high-brightness electron sources is critical to state-of-the-art accelerator applications like X-ray free laser (XFEL) and ultra-fast microscopy. Cesium telluride chosen as the source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents first demonstration growth highly crystalized epitaxial cesium thin films on 4H-SiC graphene/4H-SiC substrates with ultrasmooth film surfaces. ordering was characterized by in situ reflection high energy...
Abstract The quality of organic semiconductor tris-(8-hydroxyquinoline)aluminum (Alq 3 ) thin films, deposited at the rate 5.0 Å s −1 , 2.5 and 1.0 respectively, have been investigated using x-ray reflectivity (XRR) grazing incidence small angle scattering (GISAXS) studies. While XRR provides information about structural details, GISAXS morphology films. film is very good with a surface roughness only 8 Å. electron density increases from 0.39 e −3 to 0.43 due reduction growth 5 1 . higher...
In-situ MOKE measurement has been performed to measure variation of magnetic properties with Co film thickness on Poly (methyl methacrylate) (PMMA) thin films. PMMA films were deposited by Spin coating technique. Cobalt using electron beam evaporation technique both in presence and absence Argon (Ar) gas. It is observed that well defined hysteresis loop start appearing at 42 Å whereas after introduction Ar it appears 31 Å. Magnetic dead layer reduces form 27 22 due Ar. Maximum coercivity...
In-situ Resistivity, MOKE and XRR measurement has been performed to measure variation of transport, magnetic properties structural study respectively with Cobalt (Co) film thickness on Poly (methyl methacrylate) (PMMA) thin films. PMMA films were deposited by Spin coating technique. using electron beam evaporation It is observed from resistivity that percolation takes place at around 28 Å Co thickness. Interestingly dead layer thickness, calculated measurement, 27 Å. X-ray reflectivity done...
In the present paper, we report on structural investigation of ferromagnetic metal/organic semiconductor bilayer thin films. Ferromagnetic Co films with thickness ∼ 150 Å were deposited organic Tris-(8-hydroxyquinoline)aluminum, Alq3 different ranging from 250 to 900 Å. Si(100) substrates by thermal evaporation prior deposition using electron beam technique. X-ray reflectivity measurements have been performed determine internal structure samples. Experimental data fitted Parratt formalism...
Ion irradiation induced magnetic modification of a Co (100 Å)/Alq3 (950 Å) bilayer thin film has been studied using magneto optic Kerr effect (MOKE) studies. Alq3 was deposited on Si(100) substrate thermal evaporation deposition technique. Then, top e-beam evaporation. 10 keV Ar+ ion beams with fluence 1 × 1016 ions/cm2 have used to modify the Co/Alq3/Si sample. MOKE measurements were performed from sample before and after irradiation. reveal that intensity reduces by factor three without...