Abstract Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these weaken as continuously scale down to sub‐nanoscale, primarily attributed diminished transport of radicals into small features. This leads a significant decrease in rate (ER). Here, novel interaction involving ions, surface‐adsorbed chemistries, materials at cryogenic temperatures is found...

Initial stress (σi) of a room-temperature deposited FePt films was manipulated to study the order-disorder transformation. We observed that, while σi increased from −1.01 (compressive) 0.18 GPa (tensile), phase transformation activation energy decreased 0.387 0.23 eV/atom. This causes reduction in ordering temperature about 100 °C. also found that densification induces an increase tensile 1 before ordering. In with small σi, strong tension facilitates nucleation L10 FePt; however, if highly...

The etch characteristics of SiN films using CF4/H2 and HF/H2 plasmas were investigated in a dual-frequency capacitively coupled plasma reactor with increasing an H2 percentage from 5 to 34%. rate decreased by 35% 10% HF/H2. F density, measured optical emission actinometry, approximately 70% both plasmas, but it alone could not explain the reduction. Surface analysis revealed formation (NH4)2SiF6, ammonia fluorosilicate (AFS) phase, when was added plasmas. A model is proposed where anhydrous...

Cyclic atomic layer etching (ALE) of SiN with high selectivity to SiO2, utilizing a hydrofluorocarbon deposition followed by exposure hydrogen plasma, is presented. The surface reaction mechanism and behavior were investigated in situ attenuated total reflectance Fourier transformation infrared spectroscopy (ATR-FTIR) spectroscopic ellipsometry. In the step, film was deposited on top films using CF4/H2 plasmas varying H2 contents (33 85%). Subsequently, surface-modified exposed plasma for...

The surface conductivity influences the etched pattern profiles in plasma process. In dielectric film etching, it is vital to reduce charging build-up, which bends trajectory of incoming ions for highly anisotropic etching. A significant increase electric SiO2 films was observed when exposed down-flow plasmas containing hydrogen fluoride (HF) at cryogenic temperature (−60 °C). This phenomenon can be attributed two factors: (i) absorption HF and/or its compounds and (ii) presence H2O, likely...

Ternary metal carbide TiAlC has been proposed as a gate material in logic semiconductor devices. It is hard-to-etch due to the low volatility of etch byproducts. Here, simple, highly controllable, and dry etching method for first presented using nonhalogen N

Roles of rapid thermal annealing (RTA) on the evolution crystallographic anisotropy single-layered FePt films have been characterized. We observed a huge biaxial tensile stress 2.18 GPa induced with increasing heating rate from 0.5 to 40 K/s. The result is transition orientation (111) perfect (001) texture. later then degrades at rates ≥80 K/s due morphological variation. advantages RTA are induce by densification reaction within very short time and simultaneously impede thickness-dependent...

Single-layered FePt thin films were deposited on glass substrates and subsequently annealed at 800 °C for various times in a rapid thermal annealing (RTA) furnace. Near-fully-L10-ordered obtained after RTA. The accumulation of the intrinsic tensile stress is mainly contributed by densification reaction, which leads to development (001) preferred orientation. relief predominantly stems from microstructural variation (from continuous interconnected network state), resulting reduction texture....

Abstract Reduction of SnO 2 to form spherical Sn particles and etching are obtained by floating wire (FW)‐assisted medium‐pressure H /Ar plasma. High‐density plasma (10 14 cm −3 ) with a larger treatment area at medium pressure kPa) produces two‐times higher removal rate (0.111 mg/min) than that atmospheric the same 300 mm . film is removed from glass surface two‐step process involving (1) reduction FW‐H (2) low‐contact water‐based cleaning. High smoothness (roughness 0.488 nm) high optical...

Abstract The dependences of etching characteristics on substrate temperature ( T s , from –20 to 50°C) the plasma‐enhanced chemical vapor deposition (PECVD) SiN films (PE‐SiN) and low‐pressure (LPCVD) (LP‐SiN) with CF 4 /H 2 plasma were investigated. Fourier‐transform infrared spectroscopy shows that both film types N–H bond‐rich films, but in different hydrogen contents (PE‐SiN 22.7 at% LP‐SiN 3.8 at%) Rutherford backscattering analyses. A higher content led a thinner fluorocarbon thickness...

The influence of initial stress/strain state on ordering FePt is studied. internal stress thin films deposited at room temperature can be successfully controlled in a wide range from compressive 0.95 GPa to 1.1 tensile by adjusting sputter distance and inserting underlayer with different thickness. Ordering process triggered rapid thermal annealing 350 for 15 min. Structural magnetic results confirm that order transformation occurs within the . Highly stressed states (either or tensile)...

To investigate the crystallographic structure and magnetic properties as a function of chemical composition (40–62 at. %) substrate temperature (Ts = 300–550 °C), we fabricated epitaxial FePd films thickness 20 ± 2 nm by sputtering on MgO (100) single-crystal substrates. The ordering parameter, measured x-ray diffraction with synchrotron radiation, perpendicular anisotropy Fe54Pt46 increased increasing temperature. For 550 °C) varied Fe content, direct correlation between parameter...

With the increasing interest in dry etching of silicon nitride, utilization hydrogen-contained fluorocarbon plasma has become one most important processes manufacturing advanced semiconductor devices. The correlation between molecules from plasmas and hydrogen atoms inside SiN plays a crucial role behavior. In this work, influences (CF4/D2 CF4/H2) substrate temperature (Ts, −20 to 50 °C) on etch rates (ERs) PECVD films were investigated. rate performed by CF4/D2 was higher than obtained...

The use of high-power impulse magnetron sputtering (HIPIMS) to deposit chromium-based thin films on brass substrates for the purpose corrosion-protective coating was investigated. By varying process parameters (pulse frequency, pulse width and N2 flow rate) structure design, including single-layer multilayer structures, obtained results revealed that Cr-N deposited through HIPIMS exhibited higher film density corrosion resistance compared traditional direct-current sputtering. Based a field...

Number density of plasma-generated atoms or molecules is an important parameter for both fundamental research and applications. It can be measured in a straightforward manner, using vacuum-ultraviolet absorption spectroscopy, which mainly possible laboratory conditions as it may require bulky equipment, such lasers. By contrast, optical actinometry alternative approach that only uses spontaneous emission from the plasma. This technique relies on so-called corona excitation line ratios...

Cryogenic atomic layer etching (ALE) represents a promising technique for achieving subnanoscale material removal in semiconductor processes, owing to its unique self-limiting surface-adsorbing reactions. This paper presents cryogenic ALE method SiN, utilizing surface modification with hydrogen fluoride (HF) dose and an Ar etch step removing the layer. The reactions mechanism were examined using situ monitoring techniques, including spectroscopic ellipsometry attenuated total reflectance...

We have characterized the dependence of residual strain/stress on annealing process (post- and in-situ annealing) in single-layer FePt films prepared by sputtering onto amorphous glass substrates. A remarkable difference evolutions strains between post-andin-situ annealed samples was observed Sin <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ψ method using synchrotron radiation. The onset ordering temperature for both series is almost...