A5100361647- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Photonic Crystal and Fiber Optics
- Advanced Fiber Laser Technologies
- Nanowire Synthesis and Applications
- Advanced Fiber Optic Sensors
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Optical Network Technologies
- Silicon Carbide Semiconductor Technologies
University of Hong Kong
2019
IMRA America (United States)
2009
Leakage channel fibers (LCFs) have demonstrated their ability to significantly extend the effective mode area of a fundamental while maintaining robust single-mode operation. These are designed strong built-in filtering that effectively suppresses propagation all higher order modes keeping fundamental-mode loss minimum, and, therefore, extending regime Recently, all-glass LCFs been as significant improvement over designs with air holes. can not only be manufactured much improved consistence...
How far can the miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFETs) continue is a recurring question, essential to all aspects digital technology. Recent claims well-performing MOSFETs with gate lengths below 4 nm apparently defy fundamental limit source-to-drain direct tunneling (SDDT). Here, we investigate that by simulating gate-all-around Si nanowire FETs between 8 and 3 using state-of-the-art atomistic quantum transport modeling. We find at 3-nm length,...
Leakage channel fibers have demonstrated their ability to significantly extend the effective mode area of a fundamental while maintaining robust single operation. These are designed strong built-in filtering which effectively suppresses propagation all higher order modes keeping loss minimum, and, therefore, extending regime Recently all-glass leakage been as significant improvement over designs with air holes. glass not only can be manufactured much improved consistence and uniformity. They...
High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, dependence level on magnitude gate voltage and duration investigated. Compared with scheme high gate-bias a short time, transfer characteristics are significantly recovered by applying low electric field long duration. When time up certain value, threshold almost approaches limitation, which less than that before irradiation. Meanwhile, effect temperature devices also demonstrated. The...