A5020557124- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Radiation Detection and Scintillator Technologies
- GaN-based semiconductor devices and materials
- Particle Detector Development and Performance
- Thin-Film Transistor Technologies
- Advanced Surface Polishing Techniques
- Photocathodes and Microchannel Plates
- Radiation Effects in Electronics
- Advanced Optical Sensing Technologies
- Ga2O3 and related materials
- Surface Roughness and Optical Measurements
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
University of Freiburg
2014-2021
In this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the neutron capture rate of by improving epitaxial growth technique. technique, 5-μm-thick was achieved using trimethylboron as a B metal-organic source, which suppressed gas-phase reaction. The α-particle energy spectrum, pulse signal, and residual particles emitted from reaction measured performing radiation detection measurements. detected signal position in spectrum similar that 2.3 MeV...
Cadmium telluride (CdTe) is used as a photon absorber layer in medical X-ray imaging and radiation detection. Polycrystalline CdTe sequence of back contact materials have been directly deposited on the Medipix readout chip well silicon substrates by physical vapor deposition. The whole structure investigated with respect to electrical properties film sequence. growth takes place modified MBE system allowing rates up 6 μm/h. Because this process allows evaporation multiple source an entire...