A5102823751- Solid State Laser Technologies
- Laser Design and Applications
- Chalcogenide Semiconductor Thin Films
- Luminescence Properties of Advanced Materials
- Phase-change materials and chalcogenides
- Quantum Dots Synthesis And Properties
- Spectroscopy and Laser Applications
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
- Laser Material Processing Techniques
- Optical properties and cooling technologies in crystalline materials
- Glass properties and applications
- Magneto-Optical Properties and Applications
- GaN-based semiconductor devices and materials
- Solidification and crystal growth phenomena
- Advanced Semiconductor Detectors and Materials
- Photoacoustic and Ultrasonic Imaging
- Probability and Risk Models
- Thermography and Photoacoustic Techniques
- Photorefractive and Nonlinear Optics
- Optical and Acousto-Optic Technologies
- ZnO doping and properties
- High-Temperature Coating Behaviors
- Semiconductor Lasers and Optical Devices
Institute of Chemistry of High-Purity Substances them. G.G.Devyatyh
2011-2024
The lasing characteristics of lasers based on diffusion-doped polycrystalline samples excited at room temperature by an electric-discharge HF laser are studied. A sample doped from two sides (working surfaces) emitted radiation with the energy slope efficiency and respect to absorbed in case elliptical pump spot size . It is found that possibility increasing these types area (at a constant density) limited appearance parasitic generation typical for disk lasers. first results reported made...
Characteristics of a laser on ZnSe : Fe2+ polycrystalline active element with undoped faces (the concentration Fe ions was maximal inside the crystal and zero at faces) were studied. The pumped by non-chain electrodischarge HF room temperature crystal. fabricated method diffuse doping, which prevented iron film newly deposited to substrate from interacting atmospheric air (moisture oxygen) hindered subsequent penetration oxygen into matrix in course high-temperature annealing sample. This...
Characteristics of a room temperature laser on polycrystalline ZnS:Fe2+ subjected to diffuse doping from two sides were investigated. The sample was pumped by non-chain electrodischarge HF with the FWHM duration radiation pulse ~140 ns. diameter pumping spot surface crystal 3.8 mm. Further increases in size limited parasitic generation arising due high concentration Fe ions near-surface layer at relatively small depth (short length active medium). energy 25.5 mJ obtained slope efficiency 12%...
The characteristics of an Fe2+:ZnSe laser at room temperature and its active elements with undoped faces were studied. Polycrystalline one or two diffusion-doped internal layers obtained by the solid-state diffusion bonding technique applied to chemical vapor deposition grown ZnSe plates preliminary doped Fe2+ ions in process hot isostatic pressing. A non-chain electric-discharge HF was used pump crystals. It demonstrated that increasing number allows maximum diameter radiation spot energy...
A laser on polycrystalline ZnS:Fe2+ samples pumped at room temperature by a pulsed electrodischarge HF was investigated. Samples of zinc sulphide grown the method chemical vapour deposition (CVD) were doped with iron ions from two sides diffusion method. The doping crystals performed using process hot isostatic pressing (HIP treatment) an argon pressure 100 MPa and 1265 °С. longer duration HIP treatment resulted in greater depth sample higher slope efficiency laser. For crystal subjected to...
The energy and spectral characteristics of a laser on ZnS:Fe2+ polycrystal operating at room temperature have been studied. was pumped by non-chain electro-discharge HF with full-width half-maximum pulse duration ~140 ns. diameter the pumping radiation spot crystal surface 3.8 mm. two-sided diffuse doping polycrystalline CVD-ZnS sample surfaces preliminarily coated high-purity iron films performed in process hot isostatic pressing (HIP) an argon atmosphere pressure 100 MPa 1290 °С....
High potential of two-photon confocal microscopy for photoluminescent tomography bulk semiconductor crystals are demonstrated in this work using ZnSe as an example. The first results investigation crystals, both undoped and doped by 3d metals, presented. Appearance luminescence quenching centres specific parts grain recombination activity the proposed method; these phenomena cannot be detected other luminescence-based methods.
The output characteristics of a laser based on polycrystalline Cr2+:ZnSe obtained by diffusion annealing are studied upon pumping cw-diode-pumped Q-switched Tm:YLF operating at wavelength 1.908 μm with pulse repetition rate 2 kHz. Efficient pulse-periodic lasing is in the region 2.32 total efficiency ∼17%, duration ∼45 ns, and an average power ∼1 W.
Generation characteristics of laser on polycrystalline ZnSe:Fe<sup>2+</sup> samples doped by the diffusion method have been investigated at room temperature under pumping an electrodischarge HF laser. With sample from two sides (working surfaces) obtained generation energy was E=253 mJ with slope efficiency η<sub>sl</sub>=33% and respect to absorbed η<sub>abs</sub>≈28% elliptical shape spot dimension a×b=6.8×7.5 mm. It established that possibilities further increase...
We have studied the influence of chromium doping ZnSe crystals at 1250 • C on spatial distribution luminescence in spectral range 0.44 to 0.73 µm.It is expected that several types defective-impurity centers are formed due process.Centers least one type demonstrate complex and lead formation area with high intensity looking like a bright strip parallel surface.
The first experimental results of investigations the spectral and energy characteristics room temperature Fe-Cr:ZnSe laser are presented. Several polycrystals co-doped with Fe Cr ions were investigated. crystals distinguished by doping technique. At temperature, maximum 35 mJ was obtained in range 4-5 μm, slope efficiency η <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">slope</sub> = 26%.