A5101839535- Topological Materials and Phenomena
- Graphene research and applications
- nanoparticles nucleation surface interactions
- Advanced Thermodynamics and Statistical Mechanics
- 2D Materials and Applications
- ZnO doping and properties
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- High-Energy Particle Collisions Research
- Photorefractive and Nonlinear Optics
- Thin-Film Transistor Technologies
- Optical Coatings and Gratings
- Semiconductor materials and interfaces
- Spectroscopy and Quantum Chemical Studies
- Plasmonic and Surface Plasmon Research
- High-pressure geophysics and materials
- Infrared Target Detection Methodologies
- Transition Metal Oxide Nanomaterials
- Semiconductor Quantum Structures and Devices
- Experimental Learning in Engineering
- Copper-based nanomaterials and applications
- Advanced Optical Sensing Technologies
Shanghai Institute of Technical Physics
2023
Fudan University
2004-2018
Shanxi Agricultural University
2010
Bismuth selenide (Bi2Se3), with a wide bulk band gap and single massless Dirac cone at the surface, is promising three-dimensional topological insulator. Bi2Se3 possesses gapless surface states an insulator-like as new type of quantum matter. Different nanostructures were prepared using electron beam evaporation high production efficiency. Structural investigations by energy-dispersive X-ray analysis, scanning microscopy, diffraction revealed sample stoichiometries structural transition...
Niobium pentoxide (Nb2O5) films with different thicknesses were prepared using the electron beam evaporation method and then annealed at temperatures from 300 °C to 800 before being characterized by variable-angle spectroscopic ellipsometry, x-ray diffraction, etc. The results showed that optical constants microstructures of Nb2O5 exhibit a strong dependence on annealing temperature. In visible light region, refractive indices show positive correlation temperature 600 °C, but negative °C....
Size-dependent melting properties of nanometer-sized Indium particles with size ranging from 25.5 to 68.1 nm were studied by spectroscopic ellipsometry, and a critical is found between 42.4 44.9 nm. The points larger than are almost the same as that bulk indium, while no clear point was for indium smaller size. A knee defined average introduced characterize these particles, it depresses decreasing mechanism dependent discussed. This work shows ellipsometry an effective optical tool...
In1–xSnx (x = 0.06–0.51) alloy films were deposited on Si substrates by electron beam evaporation and characterized X-ray diffraction, field-emission scanning microscopy, atomic force spectroscopic ellipsometry. The dielectric functions of the obtained in energy range from 1.55 to 4.13 eV based ellipsometry measurements, it is believed that a solid–solid phase transitions led changes ε. diagram nanometer-sized particles different bulk material, this phenomenon can be explained surface stress...
The liquid-gas phase transition in strange hadronic matter is studied utilizing an extended Furnstahl-Serot-Tang model with nucleons and hyperons. system treated as of two components. analyzed by investigating the stability Gibbs conditions for equilibrium. A two-dimensional binodal surface resulting from two-phase equilibrium---namely, boundary---is obtained. For each temperature ranging $T=8$ to 12 MeV, a limit pressure on section found, while critical point spotted around...
Hg<sub>1-<i>x</i></sub>Cd<sub><i>x</i></sub>Te is considered as the preferred material for high performance infrared photodetectors and imaging focal plane array (FPA) detectors. One of technical challenges multi-dimensional integrated HgCdTe epitaxy by molecular beam (MBE) lies in in-situ extraction, characterization precisely control a series parameters such alloy composition, surface roughness, substrate temperature film thickness at relatively low about 180°C. Therefore, an in-situ,...