A5059766697- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Advanced Optical Imaging Technologies
- Metal and Thin Film Mechanics
- Orbital Angular Momentum in Optics
- Ga2O3 and related materials
- Digital Holography and Microscopy
University of Cambridge
2018
Cardiff University
2018
University of Sheffield
2018
University of Oxford
2014
Control of leakage currents in the buffer layers GaN based transistors on Si substrates is vital for demonstration high performance devices. Here, we show that growth conditions during metal organic chemical vapour deposition graded AlGaN strain relief (SRLs) can significantly influence vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron investigate origins paths they result from preferential incorporation oxygen impurities side...
The generalised phase contrast (GPC) method provides versatile and efficient light shaping for a range of applications.We have implemented system that used two passes on single spatial modulator (SLM).Both the pupil distribution filter were generated by SLM.This provided extra flexibility control over parameters including step magnitude, shape, radius position filter.A feedback on-line optimisation these properties was also developed.Using from images field, it possible to dynamically adjust...