The preferential adsorption of cation additives enables the transformation a zinc nucleation mechanism from instantaneous to progressive nucleation, which ultimately realizes stable stripping/plating behavior.

This paper discusses the design methodologies of a 340 GHz on-chip 3-D antenna. Firstly, high-gain and high-radiation efficiency substrate integrated waveguide (SIW) cavity backed antenna is designed using standard 0.13- μm SiGe BiCMOS technology. Then, low-permittivity supporter dielectric resonator (DR) are vertically stacked on proposed antenna, forming Yagi-like to further enhance gain radiation efficiency. The measurements showed that achieved peak ~10 dBi ~80% at GHz; impedance...

Abstract Aqueous Zn‐metal battery (AZMB) is a promising candidate for future large‐scale energy storage with commendable capacity, exceptional safety characteristics, and low cost. Acetonitrile (AN) has been widely used as an effective electrolyte constituent to improve AZMBs’ performance. However, its functioning mechanisms remain unclear. In this study, we unveiled the critical roles of AN in AZMBs via comparative situ electrochemical, gaseous, morphological analyses. Despite limited...

Understanding zinc (Zn) deposition behavior and improving Zn stripping plating reversibility are significant in developing practical aqueous ion batteries (AZIBs). metal is abundant, cost-effective, intrinsically safe compared with Li. However, their similar inhomogeneous growth regime harms practicality. This work reports a facile, easily scalable, but effective method to develop textured unidirectional scratches on the surface that electrochemically achieves high accumulated areal capacity...

Aluminum–air batteries (AABs) are attracting increased attention because of their high energy density, low cost, and excellent security.

Background: Recent researches have demonstrate that cuproptosis, a copper-dependent cell death mechanism, is related to tumorigenesis, progression, clinical prognosis, tumor microenvironment, and drug sensitivity.Nevertheless, the function impact of cuproptosis in cholangiocarcinoma (CCA), remain elusive.Methods: Utilizing data obtained from Gene Expression Omnibus (GEO) The Cancer Genome Atlas (TCGA-CHOL) datasets, we conducted subgroup typing CCA according cuproptosis-related genes (CRGs)...

This paper presents the design of an X-band phased-array transceiver core chip in 0.13-μm SiGe BiCMOS technology. The system is based on all-RF architecture and contains switches, low-noise amplifier (LNA), power (PA), common leg 5-bit phase shifter with loss compensation amplifiers. A distributed structure used gain amplifiers to ease multi-stage roll-off transmit (TX)/receive (RX) paths. LNA utilized RX path achieve broadband amplification acceptable noise figure (NF) while a stacked PA TX...

A 340-GHz on-chip antenna (OCA) with highgain and high-radiation efficiency is designed using a standard 0.13-μm SiGe BiCMOS technology without any postprocesses. In the proposed OCA structure, rectangular slot loop etched in upper wall of substrate integrated waveguide (SIW) to form magnetic current radiator. The SIW structure forms back cavity suppress surface waves separate radiation aperture from low-resistivity substrate. Furthermore, side edge λ <sub...

This paper presents the detailed design and demonstration of a Ka-band single-chip transmit (TX)/receive (RX) front-end in 0.13- $\mu \text{m}$ SiGe BiCMOS technology. The includes single-pole double-throw (SPDT) switches, low-noise amplifier, loss compensation amplifiers (LCAs), phase shifter, power amplifier. Distributed structures are utilized gain to ensure broadband performance while stacked structure is adopted amplifier deliver high output TX mode. A 5-b shifter with strategies for...

This paper presents a 320-GHz 1 ×4 fully integrated phased array transmitter using 0.13- μm SiGe BiCMOS technology. The is aiming for terahertz wireless communication and based on RF beam forming architecture. By integrating 20-GHz phase-locked-loop (PLL) frequency synthesizer, an 80-GHz quadrupler, 1:4 Wilkinson power divider network, four-way tunable attenuators, amplifiers, analog phase shifters, quadruplers/modulators, on-chip antenna arrays, the chip achieves maximal EIRP of 10.6 dBm at...

This paper presents two endfire on-chip antennas (OCAs) at 140 and 320 GHz using a standard 0.13-μm SiGeBiCMOS technology; quasi-Yagi antenna concept is used with loaded dielectric. In order to eliminate the influence of low-resistivity silicon substrate, substrate thickness chosen as ~84 μm (for GHz), mounted on edge metal supporter front part ungrounded. The dielectric designed dioxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This paper presents a stacked power amplifier (PA) for X-band multifunctional chips using 0.13-μm SiGe HBTs. To achieve high output power, two 5-stacked PAs with optimum inter-stage matching networks are combined Wilkinson combiners. Furthermore, 3-stacked is used as the driving to increase gain of whole PA. During on-chip measurements, PA achieves peak 890 mW and maximum added efficiency (PAE) 17.8 %. The chip area 1.9 × 1.4 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The development of zinc-ion batteries with high energy density remains a great challenge due to the uncontrollable dendrite growth on their zinc metal anodes. Film anodes plated substrate have attracted increasing attention alleviate these issues. Herein, we first point out that both random crystal orientation and low affinity are important factors formation. Accordingly, (1 0 1) fully preferred tin interface layer was fabricated by chemical plating 0) oriented copper. This decorated copper...

This paper presents an ultra-broadband distributed amplifier (DA). The amplifying cell utilizes the three-level stacked transistor structure. Loss compensation techniques are used to broaden operating bandwidth with layout considerations. 130 nm SiGe HBTs fabricate proposed design, total chip area occupied is 1.3mm×0.7mm including bonding pads. With on-chip RF choking inductors and DC blocking capacitors, designed DA achieves a band width of 10 170 GHz, average gain 19 dB. power consumption...

This paper presents an chip-to-waveguide-horn (CWH) antenna structure to improve silicon-based on-chip gain at D-band. In the proposed CWH structure, a transition from chip rectangular waveguide is adopted and followed by horn for power radiation. For chip-to-waveguide transition, high efficiency dielectric resonator (DRA), which excited substrate integrated (SIW) cavity backed antenna, used transfer waveguide. The simulated results indicate 45% radiation -17 dB reflection coefficient 140...

A sub-terahertz frequency doubler with signal modulation is proposed and analyzed in this letter. An 85 GHz input modulated by a differential pair, push-push capacitive degeneration technique designed to obtain the 170 output signal. Via use of negative impedance eliminate leakage current transistors, enhanced achieves power efficiency 8.5% maximum 4.5 dBm at without applying The 0.13 μm SiGe BiCMOS process used fabricate design total chip area 0.75 × 0.8 mm <sup...

A cascade distributed amplifier (DA) is designed and analyzed in this letter. The proposed DA fabricated 0.13 μm SiGe HBTs process patterned ground micro-strips are deployed for the design of inductors to achieve high-Q transmission line (TL). In addition, negative resistors capacitors used widen bandwidth. Gain boosting techniques also ensure gain flatness throughout band. achieves an average 17.5 dB 14.5 at 110 GHz. 7.5 2.7 dBm saturated output power obtained 50 100 GHz, respectively....

Abstract The industrial application of zinc‐ion batteries is restricted by irrepressible dendrite growth and side reactions that resulted from the surface heterogeneity commercial zinc electrode thermodynamic spontaneous corrosion in a weakly acidic aqueous electrolyte. Herein, common polar dye, Procion Red MX‐5b, with high polarity asymmetric charge distribution introduced into sulfate electrolyte, which can not only reconstruct solvation configuration Zn 2+ strengthen hydrogen bonding to...