A5055481116- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Molecular Junctions and Nanostructures
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Polymer Nanocomposite Synthesis and Irradiation
- Advancements in Semiconductor Devices and Circuit Design
- Conducting polymers and applications
- Nonlinear Optical Materials Studies
- Graphene research and applications
- Optical Imaging and Spectroscopy Techniques
- Force Microscopy Techniques and Applications
- Advanced Memory and Neural Computing
- Laser-Ablation Synthesis of Nanoparticles
- Industrial Engineering and Technologies
- Photopolymerization techniques and applications
- Luminescence and Fluorescent Materials
- Nanocluster Synthesis and Applications
- Electric Power Systems and Control
- Transition Metal Oxide Nanomaterials
- Advanced Materials Characterization Techniques
- Water Quality Monitoring and Analysis
- Nanoplatforms for cancer theranostics
- Optical and Acousto-Optic Technologies
University of Groningen
2015-2022
Lodz University of Technology
2016-2021
V.E. Lashkaryov Institute of Semiconductor Physics
2015-2017
National Academy of Sciences of Ukraine
2013-2017
University of Łódź
2016-2017
Lviv Polytechnic National University
2015-2016
Tunnelling currents through tunnelling junctions comprising molecules with cross-conjugation are markedly lower than for their linearly conjugated analogues. This effect has been shown experimentally and theoretically to arise from destructive quantum interference, which is understood be an intrinsic, electronic property of molecules. Here we show experimental evidence conformation-driven interference effects by examining through-space conjugation in π-conjugated fragments arranged face-on...
Transition voltages respond to the collective action of dipole moments embedded in self-assembled monolayers.
This paper describes tunneling junctions comprising self-assembled monolayers that can be converted between resistor and diode functionality in-place. The rectification ratio is affected by the hydration of densely packed carboxylic acid groups at interface top-contact monolayer. We studied this process treatment with water a scavenger using three different top-contacts, eutectic Ga–In (EGaIn), conducting-probe atomic force microscopy (CP-AFM), reduced graphene oxide (rGO), demonstrating...
Improvement of polyvinyl alcohol stability against ultraviolet (UV) illumination is achieved by introducing cadmium sulfide (CdS) nanoparticles into the polymeric matrix. Enhancement analyzed optical characterization methods. UV protection diminishing probability photo-activated formation defects in polymer. The sources polymer are lowering efficiency excitation via partial absorption incident light embedded as well de-excitation macromolecules that have already absorbed quanta energy drain...
The collective action of embedded dipoles causes asymmetric tunneling charge-transport through self-assembled monolayers.
This paper describes a simple model for comparing the degree of electronic coupling between molecules and electrodes across different large-area molecular junctions. The resulting parameter can be obtained directly from current-voltage data or extracted published without fitting. We demonstrate generalizability this by over 40 junctions comprising measured laboratories. results agree with existing models, reflect differences in mechanisms charge transport rectification, are predictive cases...
CdS nanoparticles have been synthesized in aqueous solution using polyvinyl alcohol (PVA) as a capping reagent. The effects of exposure by ultraviolet (UV) light on optical properties nanocomposites consisting colloidal and polymer PVA matrix were studied employing photoluminescence (PL) spectroscopy. It is shown that UV-induced changes the intensity are caused creation healing non-radiative recombination centers. also concluded nanocomposites, PL predominantly governed processes at NP/PVA interface.
A series of solid nanocomposites containing CdS nanoparticles in polymeric matrix with varied conditions on the interface particle/polymer was fabricated and studied by photoluminescence (PL) optically detected magnetic resonance (ODMR) methods. The results revealed interface-related features both PL ODMR spectra. paramagnetic centers are concluded to be involved processes photo-excited carriers relaxation.
The conditions for growing CdS nanoparticles suitable the visualization of biological tissues were theoretically studied and experimentally checked. optimal ranges pH values precursors' concentrations determined. applicability mercaptoethanol-capped in vitro luminescence several cellular forms histological specimens human placenta has been proven.
The detailed analysis of the synthesis CdS:Mn nanoparticles in polyvinyl alcohol polymeric matrix is presented and ranges optimal growth parameters are determined.The estimated values were used to produce solutions corresponding solid composites.The sizes structure composite films characterized by electron microscopy methods, optical properties probed using photoluminescence methods.
Correction for ‘Dipole-induced asymmetric conduction in tunneling junctions comprising self-assembled monolayers’ by Andrii Kovalchuk <italic>et al., RSC Adv.</italic>, 2016, <bold>6</bold>, 69479–69483.
Abstract We carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density states (DOS) to obtain mobility at low electric fields. From results, it can be concluded that a correct calculation DOS requires very dense wavevector k -mesh when kinetic energies are considered. The crucial issue is numerical efficiency calculation. investigate scaling different numbers cores used.
This paper presents an efficient method to calculate the influence of structural defects on energy levels and band-gap for 4H-SiC semiconductor. The semi-empirical extended Hückel was applied both ideal crystal different structures with like vacancies, stacking faults, threading edge dislocations. Synopsys QuatumATK package used perform simulations. results are in good agreement standard density functional theory (DFT) methods computing time is much lower. means that a structure ca. 1000...
In this paper, the results of ab-initio simulation crucial defects which are present in 4H-SiC shown. Band structures and DOS for point defect Stacking Faults (SF) presented here.
There are developed Matlab <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> code for optimize the cantilever geometric dimension sensors of force field measuring.
The article presents an Ensemble Monte Carlo (EMC) method as a part of new TCAD tool for simulating the properties silicon carbide semiconductor devices. potential calculation is based on Poisson's equation in finite difference scheme with appropriate boundary conditions. charge density computed by cloud-in-cell algorithm to avoid statistical noise solution.
This work is dedicated to the research of possibility application in Monte Carlo method reverse model, where square inscribed inside a circle.