This study investigates the electronic properties and transverse thermoelectric effect in ferromagnetic semimetal LaCl. While bulk bilayer structures of LaCl exhibit properties, single-layer demonstrates Chern insulator characteristics, marked by a number −1. The anomalous Hall conductivity (AHC) monolayer, bilayer, trilayer, is analyzed using Berry connection across discretized Brillouin zone. large AHC observed structure attributed to contribution each layer, with curvature increasing as...

We performed first-principles simulations to elucidate the transverse thermoelectric effect (anomalous Nernst effect) of half-metallic FeCl2 monolayer. analyzed its thermoelectricity based on semiclassical transport theory including Berry curvature and found that carrier-doping induced a large anomalous was ∼6.65 μV/K at 100 K if we assumed 10 fs for relaxation time. This magnitude originates in K-point hexagonal Brillouin zone. These results suggest two-dimensional ferromagnetic materials...

We modeled a tunneling current in p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and transfer matrix method (TMM). used β-type AGNRs, which its band gap energy electron effective mass depends width as given the extended Huckel theory. It was shown that currents evaluated employing AFA are same those obtained under TMM. Moreover, calculated proportional to voltage bias inversely with temperature.

We have studied tunneling current in a p-n junction based on armchair graphene nanoribbon (AGNR) by using the relativistic Dirac equation and transfer matrix method (TMM). The electron wave function was derived solving equation. TMM, which is numerical approach, used to calculate transmittance current. results showed that increases with bias voltage. On other hand, decreases incidence angle temperature. Moreover, AGNR width electric field result increase

Abstract We have investigated electronic structures and thermoelectric properties on six quintuple layers of Cr-doped Bi 2 Se 3 as a model quantized anomalous Hall insulator, Chern insulator. The insulator might be good transverse material exhibiting large Nernst effect by the intrinsic contribution Seebeck effect. Based rigid band approximation, we performed first-principles density functional calculations carrier-dependent coefficients. To optimize performance, discussed origin effect,...

Graphene has a high potential for use in electronic devices because it unique characteristic, electrons massless grasses and speed close to the of light. conductivity at temperature space is 40 000 cm2V-1s-1 air. In addition, thermal can reach 2 800 Wm-1K-1. The mechanical properties graphene are very strong flexible, optical white light transmittance 95%. Therefore, suitable transparent screen flexible electrode. energy band gap monolayer be changed by reducing size, as bilayer was affected...

The Dirac electron tunneling current in an n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR) has been modeled.The wavefunction was derived by employing the relativistic equation.The transmittance using transfer matrix method (TMM).The Landauer formula used to calculate current.The results showed that various variables such as base-emitter voltage, base-collector voltage and AGNR width affect current.It found increases with increasing voltages.Moreover, increase current.

Abstract The anomalous Hall conductivity of all transition metal trihalides was explored using first-principles calculations. Employing the Fukui-Hatsugai-Suzuki method, we found that ferromagnetic monolayers X Br 3 ( = Pd, Pt) possessed quantized (QAHC) with and without carrier doping. Due to unique QAHC, their transverse thermoelectric properties were investigated. semi-classical Boltzmann transport theory, coefficient each monolayer analyzed. Anomalous Nernst coefficients (ANCs) prominent...

Simulation of tunnel current flowing in a p-n diode made from armchair graphene nanoribbons (AGNRs) was built.The is composed p-type and n-type AGNRs bandgaps the are obtained by using tight binding method.The required to describe potential profile having barrier diode.Transmittance electrons tunneling through then calculated employing Airy wavefunctions.Gaussian quadrature method, which numerical approximation, used obtain diode.All steps visualized graphical user interface Matlab.

We have modelled quantum mechanically the drain current in double gated armchair graphene nanoribbon field-effect transistors (AGNR-FETs). The Dirac 'like' equation was used to determine electron wave functions AGNR. transmittance and were calculated numerically by using a transfer matrix method (TMM). results showed that of AGNR-FET devices increases with gate voltages. In addition, threshold voltage obtained be constant at about 0.3 V. Moreover, increased decreasing thickness insulator....

We simulate quantum mechanical tunneling current in armchair graphene nanoribbon tunnel field-effect transistors (AGNR-TFETs). The relativistic Dirac equation is used to determine electron wave functions the AGNRs, while potential profile solved by Poisson equation. use a transfer matrix method (TMM) calculate transmittance and AGNR-TFETs. results show that increases with increasing drain gate voltages. Moreover, AGNR width thickness of insulator affect characteristics currents.

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and obtained transmittance then used current. The calculated for various variables such as base-emitter voltage, base-current AGNR width. It found that increases with increasing voltage or base-collector voltage. This result due lowered barrier height base region caused by increase In addition,...

The dispersion energy of bi layer arm chair grafene nano ribbon (AGNR) have been calculated using the Tight Binding method. This is used to analyze characteristics device relating voltage-current in Tunnel Field Effect Transistor (TFET). current's Landauer for theoretical approach output properties generated device, and use Gauss Quadrature method calculate current on TFET device. result show that drain linear wide ribbon.

A theoretical model of electron tunneling current in a p-n junction based on strained armchair graphenenanoribbons (AGNRs) is developed. The effects strain to the energy dispersion relation and band gap AGNR are formulated under extended tight binding method. transmittance was derived by utilizing transfer matrix calculated then used obtain employing Landauer formula with Gauss Quadrature computation gap, width, studied thoroughly.

A theoretical model of electron tunneling current in a p-n junction made from strained armchair graphenenanoribbon (AGNR) was developed.The effect strain to the energy dispersion relation AGNR formulated under tight binding method.The bandgap then analytically determined.Furthermore, transmittance calculated by utilizing Airy wavefunction-approach.Finally, used obtain employing Landauer formula.The effects band gap, width, and were studied thoroughly.

A tunnelling field-effect transistor (TFET) based armchair graphenenanoribbons (AGNRs) with variation of uniaxial strain has been modeled. Bandgap strained AGNR estimated by an extended tight binding method is applied to obtain electrical characteristics a TFET under the quantum capacitance limit device approximation. Furthermore, electron transmittance calculated utilizing WKB (Wentzel–Kramers–Brillouin) approach. The obtained then used calculate drain current employing Landauer formula....