A5053402628- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Ga2O3 and related materials
- Radiation Effects in Electronics
- Physics of Superconductivity and Magnetism
- GaN-based semiconductor devices and materials
- Aluminum Alloys Composites Properties
- Advanced Photocatalysis Techniques
- Advanced Welding Techniques Analysis
- 2D Materials and Applications
- Molecular Junctions and Nanostructures
- Iron-based superconductors research
- Advancements in Semiconductor Devices and Circuit Design
- Characterization and Applications of Magnetic Nanoparticles
- Advanced Chemical Physics Studies
- Rare-earth and actinide compounds
- Electronic and Structural Properties of Oxides
- ZnO doping and properties
- Graphene research and applications
- Advanced Thermoelectric Materials and Devices
- Magnetic Properties of Alloys
Yangzhou University
2018-2024
Beijing Radiation Center
2023-2024
Nanjing University
2011-2020
Emory University
2016-2018
National Laboratory of Solid State Microstructures
2015
Collaborative Innovation Center of Advanced Microstructures
2014-2015
Fudan University
2000-2015
Hankou University
2013
A Skyrmion crystal typically arises from helical spin structures induced by the Dzyaloshinskii-Moriya interaction. Experimentally its physical exploration has been impeded because it is a rarity and found only within narrow temperature magnetic field range. We present method for assembly of two-dimensional based upon combination perpendicularly magnetized film nanopatterned arrays vortices that are geometrically confined nanodisks. The practical feasibility validated micromagnetic...
We report the creation of an artificial skyrmion crystal, which is configurable reliably at room temperature. The samples are fabricated by embedding lithography-patterned arrays micron-sized Co disks onto Co/Pt multilayer films that have perpendicular magnetic anisotropy. Kerr microscopy and force reveal in vortex state with controllable circulation. Via comparison measured hysteresis loops calculated ones, we find sample can be configured into either a or non-skyrmion state. reproducible...
We utilize a nanoscale magnetic spin-valve structure to demonstrate that current-induced magnetization fluctuations at cryogenic temperatures result predominantly from the quantum enhanced by spin transfer effect. The demonstrated due is distinguished previously established effects nonsmooth piecewise-linear dependence of fluctuation intensity on current. It can be driven not only directional flows spin-polarized electrons, but also their thermal motion and scattering unpolarized electrons....
This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on distribution electric field, carrier concentration, electron current density when SEB occurs, radiation damage mechanism is proposed. The was revealed to be result a unique structure without PN junction within it, which possesses gate control ability exerts significant influence...
This study investigated the irradiation effect of cascode-structure GaN HEMT (High Electron Mobility Transistor) devices, employing high-energy electrons with an energy 10 MeV and doses ranging from 5 to 80 Mrad(Si). The variation electrical properties device under annealing condition was analyzed. Geant4 TCAD simulations were used analyze damage mechanisms. results show that threshold voltage has obvious negative drift drain current increases after irradiation. deviation amplitude increase...
We address the long-term controversy on fundamental question of role surface state Kondo effect with Co adatoms a Ag(111) surface. The width resonance oscillates same period half Fermi wavelength state. But amplitude increases for adatom placed next to another adatom, at vicinity step edge, and quantum confined within nanocorrals. A greater than three times enhancement can be achieved when confinement is introduced. experimental results are described quantitatively utilizing an analytical...
We present a micromagnetic study on the eigen excitations of an artificial skyrmion crystal, which has been experimentally confirmed to be stable at room temperature without need any Dzyaloshinsky-Moriya interaction (DMI). Three in-plane rotational modes and one breathing-type mode are identified. find intrinsic origin dynamics crystal is nontrivial magnetic texture instead DMI. And direction solely determined by sign number, irrespective its circulation sense, evidencing topological nature skyrmion.
Gd atom diffusion in 30-nm-diameter Fe quantum corrals is studied utilizing scanning tunneling microscopy and kinetic Monte Carlo (KMC) simulations. The adatom probability distribution inside the corral forms several trajectories closely related to oscillations of local density states at Fermi level, as revealed by spectroscopy measurements. With increasing coverage, adatoms form a ringlike structure within vicinity corrals. results are explained with KMC calculations experimentally...
Silicon carbide (SiC) with the advantages of high thermal conductivity and breakdown field strength can meet new requirements modern electronic technology for harsh conditions. Focusing on application deep space exploration, present work has explored effects 2-MeV electron irradiation 4H-SiC a fluence 7 × 1012 cm–2 1 1013 cm–2. The samples irradiated electrons cm−2 have smaller full width at half-maximum (FWHM) in both x-ray diffraction (XRD) Raman spectra, weaker defect luminescence...
As the feature size of integrated circuit decreases, critical charge single-event effect decreases as well, making nano-scale devices more susceptible to high-energy charged particles during their application in space. Here, we study electron-induced 28 nm static random-access memory (SRAM)-based field programmable gate array (FPGA) utilizing electrons with energy 1 MeV~5 MeV. The experimental results demonstrate that 3 MeV can cause functional interrupts (SEFIs) FPGA, while other energies...
Conventional silicon-based devices are approaching the scaling limits toward super miniaturization, where quantum size effect naturally emerges with increasing importance. Exploring may provide additional functionality and alternative architectures for information processing computation. Scanning tunneling microscopy/spectroscopy is an ideal tool to explore such opportunity as it can construct in atom-by-atom fashion investigate their morphologies properties down atomic level. Utilizing...