A5085581665- Geotechnical and Geomechanical Engineering
- Magnetism in coordination complexes
- Ga2O3 and related materials
- 2D Materials and Applications
- ZnO doping and properties
- Molecular Junctions and Nanostructures
- nanoparticles nucleation surface interactions
- Magnetic and transport properties of perovskites and related materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Organometallic Compounds Synthesis and Characterization
- Porphyrin and Phthalocyanine Chemistry
- GaN-based semiconductor devices and materials
- Ferroelectric and Piezoelectric Materials
- Lanthanide and Transition Metal Complexes
- Industrial Engineering and Technologies
- Electron and X-Ray Spectroscopy Techniques
- Transition Metal Oxide Nanomaterials
- Organic and Molecular Conductors Research
- Mining and Gasification Technologies
- Advanced NMR Techniques and Applications
- Geomechanics and Mining Engineering
- Electronic and Structural Properties of Oxides
- Nanomaterials for catalytic reactions
Boston University
2022-2024
University of Massachusetts Amherst
2019
A viable qubit must have a long coherence time $T_2$. In molecular nanomagnets $T_2$ is often limited at low temperatures by the presence of dipole and hyperfine interactions, which are mitigated through sample dilution, chemical engineering isotope substitution in synthesis. Atomic-clock transitions offer another route to reducing decoherence from environmental fields effective susceptibility working transition field fluctuations. The Cr$_7$Mn nanomagnet, heterometallic ring, features clock...
This study presents a comprehensive analysis of the band structure in NiPS$_3$, van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning parameters light source, we obtained very clear wide energy range NiPS$_3$. Comparison with DFT calculations allows for identification orbital character observed bands. Our perfectly match experimental...
Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing their capability for high temperature operation, breakdown voltage efficient light emission. Enhanced efficiency functional performance can be attained through miniaturization, specifically via integration device fabrication into two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup...
The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. complexity of itself, however, also led ongoing debates regarding characteristics such as the existence self-doped ligand holes. In this study, X-ray absorption spectroscopy resonant inelastic scattering have been applied investigate structure NiPS3. With aid theoretical calculations using charge-transfer multiplet model, we provide experimental...
Wide band gap (WBG) semiconductors (
High quality epitaxial thin films of the quasi-one dimensional conductor K0.3MoO3 have been successfully grown on SrTiO3(100), SrTiO3(110), and SrTiO3(510) substrates via pulsed laser deposition. Scanning electron microscopy revealed rod-shaped structures parallel to substrate surface, crystal structure was verified by using X-ray diffraction. The temperature dependence resistivity for demonstrates a metal-to-semiconductor transition at about 180 K. Highly anisotropic also observed SrTiO3(510).