A5039837375- Thin-Film Transistor Technologies
- Fuel Cells and Related Materials
- ZnO doping and properties
- Advanced battery technologies research
- Membrane-based Ion Separation Techniques
- Advanced materials and composites
- Electrocatalysts for Energy Conversion
- Transition Metal Oxide Nanomaterials
- Advanced Battery Technologies Research
- Nanowire Synthesis and Applications
- TiO2 Photocatalysis and Solar Cells
- Advanced Photocatalysis Techniques
- Quantum Dots Synthesis And Properties
- Polyoxometalates: Synthesis and Applications
- Atmospheric chemistry and aerosols
- Molten salt chemistry and electrochemical processes
- Aluminum Alloys Composites Properties
- Intermetallics and Advanced Alloy Properties
- Conducting polymers and applications
- Silicone and Siloxane Chemistry
- Advanced ceramic materials synthesis
- Metal and Thin Film Mechanics
- Aluminum Alloy Microstructure Properties
- Air Quality and Health Impacts
- Mesoporous Materials and Catalysis
Korea Institute of Industrial Technology
2016-2025
National Institute of Environmental Research
2023-2024
Korea University
2024
ORCID
2023
Sangmyung University
2013-2015
Korea Atomic Energy Research Institute
2014-2015
Gwangju Institute of Science and Technology
2007-2014
Fraunhofer Institute for Solar Energy Systems
2013-2014
Samsung (South Korea)
2012-2013
Korea Advanced Institute of Science and Technology
2006-2012
Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process. The ZTO thin films are highly transparent (>90% transmittance) in the visible region. TFTs at 400 500 °C operated enhancement mode. TFT annealed shows mobility of 14.11 cm2 V−1 s−1, threshold voltage 1.71 V, subthreshold slope 0.4 V dec−1 an on–off current ratio greater than 108. In addition, we investigated gate bias stability TFT. Positive results...
Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined. Solution-processed IZO thin films amorphous highly transparent transmittance in visible region optical bandgap of . Spin-coated TTFTs operated depletion mode showed a field-effect mobility as high , threshold voltage on/off current ratio greater than subthreshold slope
Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On hardware level, such a "dream" requires faster pixel switching and higher driving current, which turn necessitate thin-film transistors (TFTs) high mobility. Amorphous oxide semiconductors (AOS) as In-Ga-Zn-O are poised to enable TFTs, but trade-off between device performance stability under illumination critically limits their usability, is related...
We fabricated zinc tin oxide (ZTO) thin film transistors (TFTs) using a stable ZTO sol–gel solution at low annealing temperature of . To enhance transistor performance, the films were postannealed under vacuum and wet air consecutively. The TFTs exhibited high saturation mobilities , subthreshold swing (0.38 V/dec), on–off current ratio analyzed before after postannealing by X-ray photoelectron spectroscopy to explain origin enhanced performance.
Sol-gel zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated at a low temperature of 250°C using an ultraviolet (UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to the incorporation chelating agent, acetylacetone, which also acts as UV-activator. The vacuum annealing improve electrical performance TFT with mobility 2 cm2/ V·s by effective dissociation organic groups promotion metal-oxide-metal bonds formation,...
Er 3 + luminescence and cooperative upconversion in ErxY2−xSiO5 nanocrystal aggregates fabricated using Si nanowires is investigated. X-ray diffraction photoluminescence spectroscopy indicate that the composition of final nanocrystals can be varied continuously from pure Y2SiO5 to Er2SiO5 while keeping crystal structure same. Analysis concentration pump-power dependence Er3+ intensity decay time shows occurs at high concentrations, coefficient only (2.2±1.1)×10−18cm3∕s a 1.2×1021cm−3. This...
Mesoporous materials have gained considerable attention in the fabrication of supercapacitor electrodes because their large surface areas and controlled porosities. This study reports synthesis mesoporous CuCo2O4 powders using inverse micelle method. X-ray diffraction, N2 sorption measurement, transmission electron microscopy, photoelectron spectroscopy were performed to investigate properties powders. After heat treatment at 250 °C a vacuum atmosphere, exhibited specific area 116.32 m2 g–1...
Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the lattice was verified by X-ray diffraction analysis. maximum heat-treatment temperature these , resultant thin films highly transparent (with transmittance). TFTs operated an enhancement mode positive bias showed n-type semiconductor behavior. They exhibited mobility subthreshold slope 0.3 V/decade, on-to-off current ratio...