A5003300622- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Thermography and Photoacoustic Techniques
- Chalcogenide Semiconductor Thin Films
- Optical and Acousto-Optic Technologies
- Ion-surface interactions and analysis
- Porphyrin and Phthalocyanine Chemistry
- Terahertz technology and applications
- Photonic and Optical Devices
- Ultrasound and Cavitation Phenomena
- Acoustic Wave Resonator Technologies
- Diamond and Carbon-based Materials Research
- Quantum Dots Synthesis And Properties
- Hemoglobin structure and function
- Laser Design and Applications
- Magnetic and transport properties of perovskites and related materials
- Magnetism in coordination complexes
- Additive Manufacturing Materials and Processes
- Semiconductor Lasers and Optical Devices
- GaN-based semiconductor devices and materials
- Luminescence Properties of Advanced Materials
- Solid-state spectroscopy and crystallography
- Superconducting and THz Device Technology
- Ferroelectric and Piezoelectric Materials
- Porphyrin Metabolism and Disorders
V.E. Lashkaryov Institute of Semiconductor Physics
2007-2022
Ioffe Institute
2017-2022
National Academy of Sciences of Ukraine
2001-2014
Petersburg Nuclear Physics Institute
1993-2008
Institute of Semiconductor Physics
2008
Chiba University
2007-2008
Physico-Technical Institute
2001-2007
Russian Academy of Sciences
1992-2007
Tver State University
2005
All-Russian Scientific Research Institute of Technical Physics
1997
The authors propose and demonstrate the fabrication of InN∕GaN multiple quantum well (MQW) consisting 1 ML fractional monolayer InN insertion in GaN matrix under In-polarity growth regime. Since critical thickness epitaxy on is about temperature for can be remarkably higher, proposed MQW structure avoid/reduce generation misfit dislocation, resulting higher quality MQW-structure nature principle than former InN-based MQWs. MQWs are potentially applicable to room operating excitonic devices...
The authors propose and demonstrate fine structure novel InN/GaN multiple quantum wells (MQWs) consisting of ultimately thin InN around 1 ML inserted in a GaN matrix grown under In-polarity growth regime by molecular beam epitaxy. Since the critical thickness epitaxy on c-plane is about also temperature for insertion can be remarkably higher than conventional one, proposed MQW avoid new generation misfit dislocation at heterointerface, principle, results high quality due to effects enhanced...
Abstract We describe multi‐band radiation detector based on HgCdTe/Si heterostructure, which exhibits sensitivity in the MWIR and LWIR spectral range without cryogenic cooling to achieve useful performance. The noise equivalent power (NEP) for one of detectors studied reached NEP 296 K = 3.8×10 ‐13 W/Hz 1/2 . HgCdTe‐based heterostructure is also considered as sub‐THz detector. was found after oblique‐incidence (45°) bombardment with silver ions (140 keV). signal detected antenna...
Semi-insulating gallium arsenide was exposed to cavitation impact initiated by focusing a high-frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods were used for the analysis of surface morphology. Formation microstructures as well change in chemical composition are observed. The morphology structures is highly dependent on parameters. Raman spectroscopy data have confirmed incorporation nitrogen atoms GaAs lattice Ga–N bond formation region maximal...
The present paper deals with studying the magnetic and electrical properties -structure correlation of compounds under investigation: Nd 0.65 Sr 0.35 Fe x Mn 1-x O 3 (x = 0.2, 0.4, 0.6 0.8).All samples are prepared using standard solid state reaction method tested X-ray neutron diffraction.They have orthorhombic distortion perovskite-like structure space group Pnma.It is found that activation energy directly proportional to volume unit cell.The crystal does not change changing concentration...
Abstract A model of semiconductor hot electron bolometer (SHEB), in which electromagnetic radiation heats only electrons narrow-gap without its lattice slow-response heating, is considered. Free carrier heating changes the generation-recombination processes that are reason resistance rise. It estimated, Hg0.8Cd0.2Te detector noise equivalent power (NEP) for mm and sub-mm wavelength range can reach NEP ∼10−11 W at Δf = 1 Hz signal gain frequency bandwidth. Measurements performed wave...
A systematic study of mercury cadmium telluride thin films subjected to high-frequency sonication was carried out. Photoconductivity spectroscopy and the Hall effect technique were used. The charge carrier transport parameters determined from coefficient conductivity measurements. best agreement between experiment calculation obtained assuming that layer with low-mobility electrons formed as a consequence sonication. It also HgCdTe grown by MBE on GaAs substrates are stable ultrasonic...
The properties of n-CdxHg1 xTe/CdZnTe (x = 0.223) structures implanted with B+ and Ag+ ions an energy 100 keV to a dose 3 x 10^13 cm^-2 are studied. software package TRIM_2008 was applied simulate the ion implantation process. surface morphology heterostructures their optical, mechanical electrical It is found that irradiation specimens gives rise formation characteristic relief on surface, as well layer in near-surface region, where optical parameters differ from those matrix. CdxHg1 xTe...
The reproducible technology for producing high-birefringence fibers with stress-induced elliptical cladding and circular core is described. authors have obtained that a birefringence of about (1-3) 10/sup -4/, mode coupling parameter (2-7) -5/ m/sup -1/, loss less than 0.5 dB/km at 1.6 mu m. found effects restricting the capability test to maintain state linear polarization.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Abstract We proposed a HgCdTe‐based infrared imaging device, operating in the middle (3–5 μm) and long wavelength (8–14 spectral range without cryogenic cooling to achieve useful performance on level D * = 2.6×10 9 W ‐1 cmHz 1/2 . The principle of operation IR detector, investigated this study, is based generation piezoelectric charge produced by mechanical stresses compound semiconductor heterostructure heated due absorption light. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The article discusses the issue of using neural networks to analyze nature movement droplets in interblade channels turbomachines. An experimentally verified computational model was used parameters affecting process under study. A set 23 independent identified. They included both regime and geometric ones. presented uniquely determines behavior a liquid particle moving through turbomachine cascades. applicability turbomachines is considered. For this purpose, network created that predicts...
We observed the photosensitivity increase and change of electrical properties CdMnTe crystals which were photo-excited by pulsed ruby laser radiation (λ = 0.694 µm, tL 20 ns) with pre-threshold energy density. Changes took place not only in irradiated part samples investigated, but also outside. Analysis heat diffusion point defect has shown that these factors cannot be responsible for effect long-range action. It could connected propagation surface elastic wave induced irradiation. The...