A5009969187- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- X-ray Spectroscopy and Fluorescence Analysis
- Quantum Information and Cryptography
- Quantum Computing Algorithms and Architecture
- Nuclear Physics and Applications
- High-pressure geophysics and materials
- Electronic and Structural Properties of Oxides
- Silicon and Solar Cell Technologies
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
- Quantum optics and atomic interactions
- Advanced Semiconductor Detectors and Materials
- Advanced Electron Microscopy Techniques and Applications
- Force Microscopy Techniques and Applications
- Crystallography and Radiation Phenomena
- Particle Detector Development and Performance
- Plasmonic and Surface Plasmon Research
- Silicon Nanostructures and Photoluminescence
The University of Melbourne
2016-2025
Centre for Quantum Computation and Communication Technology
2015-2025
Quantum (Australia)
2003-2024
University of Technology Sydney
2024
Clinical Research Institute
2022
University of Newcastle Australia
2022
Newcastle University
2022
Australian Research Council
2007-2020
UNSW Sydney
2001-2018
National Academy of Governance
2015
Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling NV- centers. The spectrum from 15NV- arising implanted can be distinguished 14NV- native 14N 1) sites. Analysis indicates 1 40 atoms give rise an optically observable center. This report ultimately demonstrates a mechanism which yield center formation nitrogen measured.
We demonstrate a method for the controlled implantation of single ions into silicon substrate with energy sub-20-keV. The is based on collection electron-hole pairs generated in by impact ion. have used to implant 14-keV P31 through nanoscale masks as route fabrication devices donors silicon.
The machining of 3D microstructures in single-crystal artificial diamond is demonstrated with a focused ion beam (FIB)-assisted lift-off technique. A sacrificial buried layer created MeV implantation, followed by patterning selected regions the FIB technique; then selectively etched, leaving free-standing bulk (see Figure). Using this fabrication technique, light waveguiding through microstructure for first time.
Large-scale quantum computers must be built upon bits that are both highly coherent and locally controllable. We demonstrate the control of electron nuclear spin a single (31)P atom in silicon, using continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits tuned into resonance by local change electric field, which induces Stark shift qubit energies. This method, known as A-gate control, preserves excellent coherence times gate fidelities isolated spins, can...
We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties single deliberately implanted phosphorus donors. The devices provide a high-level control key parameters required potential applications in nanoelectronics. For donors, we resolve transitions corresponding to two charge successively occupied by spin down up electrons. charging energies Landé g-factors are consistent with expectations donors gated nanostructures.
Building upon the demonstration of coherent control and single-shot readout electron nuclear spins individual (31)P atoms in silicon, we present here a systematic experimental estimate quantum gate fidelities using randomized benchmarking 1-qubit gates Clifford group. We apply this analysis to ionized nucleus single P donor isotopically purified (28)Si. find average 99.95% for 99.99% spin. These values are above certain error correction thresholds demonstrate potential donor-based computing...
The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, need address them using oscillating magnetic fields hinders their integration with electronic devices. Here, we circumvent this hurdle by operating a single-atom “flip-flop” qubit silicon, where information is encoded electron-nuclear states phosphorus donor. controlled local electric at microwave frequencies, produced within metal-oxide-semiconductor device....
Abstract Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine information processing with electrons, holes or nuclei, electric magnetic fields, scalable coupling via exchange dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature interactions. Here, we present an atom-based semiconductor platform where a 16-dimensional is built by combined...
Raman microscopy has been employed to investigate the nature of damage created when natural type-IIa diamond is irradiated with MeV alpha particles. Three features appear in spectrum due damage, viz., (i) first-order line broadened and downshifted, (ii) broad which are a measure vibrational density states ion-beam-amorphized diamond, (iii) causes appearance sharp defect-induced peaks at 1490 1630 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$. For below an amorphization threshold, linear...
Sub-micrometer layers of single-crystal diamond suitable for subsequent processing are fabricated. The method employed is a significant enabling technology nanomechanical and photonic structures incorporating color centers. process uses novel double-implant process, annealing, chemical etching to produce membranes. thinnest achieved date 210 nm thick.