A5047640045- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced DC-DC Converters
- Electrostatic Discharge in Electronics
- Induction Heating and Inverter Technology
- Multilevel Inverters and Converters
- HVDC Systems and Fault Protection
- Microgrid Control and Optimization
- GaN-based semiconductor devices and materials
- Electronic Packaging and Soldering Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Real-time simulation and control systems
- 3D IC and TSV technologies
- Low-power high-performance VLSI design
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- Electric Motor Design and Analysis
- Control and Stability of Dynamical Systems
- High voltage insulation and dielectric phenomena
- Heat Transfer and Optimization
- Thermal properties of materials
- Aluminum Alloys Composites Properties
Laboratoire Ampère
2015-2024
Institut National des Sciences Appliquées de Lyon
2014-2024
École Centrale de Lyon
2008-2024
Centre National de la Recherche Scientifique
2014-2024
Université Claude Bernard Lyon 1
2015-2024
Albert Einstein College of Medicine
2024
Airbus (France)
2023
Institut de Microelectrònica de Barcelona
2019
Supergrid Institute
2016-2018
Forum Réfugiés - Cosi
2013
Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC without a good cooling system. To demonstrate this, the model merged p-i-n Schottky (MPS) diode is presented, and its parameters are identified with experimental measurements. This then used to study ruggedness regarding thermal runaway phenomenon. Finally, it shown that, where purely unipolar would be unstable, MPS structure brings increased stability.
The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems. This paper gives a useful analysis about choice model circuit networks, equivalent to discretisation heat equation by finite difference method and element an analytic developed applying internal approximation diffusion problem. effect boundary condition representation introduced errors on temperature response at source are studied. study is advantageous particularly large surges...
Silver sintering is becoming an attractive alternative to soldering, especially for high temperature applications. Indeed, the increase in operating requires new soldering alloys with even higher melting points. sintering, on contrary, a solution which only require moderate (<300°C) process temperature. In this paper, we present implementation of die attach technique based some silver paste, special focus practical considerations. A good quality bond can be achieved by paying...
This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. inverters can achieve very fast switching, thereby reducing commutation losses, cost level EMI. In order EMI emissions, it is proposed integrate small-value common-mode (CM) capacitors, directly into module. High-frequency noise, which usually difficult filter, then contained within module, thus keeping far from...
Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models associated parameters. The paper focuses a step-by-step extraction procedure the design parameters one-dimensional finite-element-method (FEM) model PiN diode. also available diverse physics-based analytical models. diode remains complex device to particularly during switching transients. demonstrates that...
Measurements have been carried out on transistors made in laser recrystallized polycrystalline silicon. In these devices, grain size is comparable to channel dimensions. A 2-D investigation of the band curvature near a boundary has it possible model transistor characteristics. Good agreement found between theory and experiments.
SiC devices enable for high temperature operation of power converters. The paper describes the laboratory step by work towards an airborne inverter : 200C cooling source, 4 kVA power. From 'JFET only' to 'full three phase stage' tested up 250C, including capacitor. Device samples are characterized in order set requirements gate driver and evaluate maximum switchable Switching losses measured using precision shunt voltage probes. A prototype is built under full load (15A) verified.
The concepts of state variable modeling have been applied to obtain a general circuit like model for the power PIN diode. main aim this paper is demonstrate feasibility approach From simplified semiconductor device differential equations, built with corresponding variational equation using an internal approximation. With special choice decomposition functional basis such approximation, it was possible get efficient and reliable models reverse recovery. A simple three variables that has only...
In high voltage direct current (HVDC) converters, a series connection of semiconductor devices is often used to achieve the desired blocking voltage. such configuration, an unequal sharing may drive one or more into avalanche breakdown, eventually causing failure entire group devices. This paper presents experimental evaluation SiC MOSFETs from different manufacturers operated in avalanche. A setup was developed test under condition. The reliability have been compared. To correlate results...
Recently, the use of DC microgrid distribution system has become more attractive than traditional AC systems due to their energy efficiency and ability easily integrate with renewable sources batteries. This paper proposes a 500 V which consists 20 kWp photovoltaic panel, batteries, loads. A hierarchical control strategy ensure balance power maintenance common bus voltage is presented. The capability exchanging neighborhood buildings also considered. Typical operation modes are simulated in...
This article considers a robust output set-point tracking problem for an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$m$</tex-math> </inline-formula> -terminal power flow controller (PFC) meshed dc micro-grids. The PFC is electronics device used to control the at node in grid and may act as circuit breaker. system modeled by state-space bilinear dynamics coupled with polynomial output. In proposed...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The virtual prototyping of power electronic converters requires electrothermal models with various abstraction levels and easy identification. Numerous methods for the construction compact thermal have been presented in this paper. Few them propose state-space models, where model order can be controlled according to necessity analyses. Moreover, reduction require experience engineer previous...
This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The active layer properties are evaluated by atomic force microscopy (AFM), secondary-ion mass spectrometry (SIMS), micro-Raman spectroscopy, cathodoluminescence (CL), and deep-level transient Fourier spectroscopy (DLTFS). SBDs exhibit near-unity ideality factor (n = 1.1), promising height (SBH) ΦB 0.82 eV, low turn-on voltage ∼0.56 V, leakage...
This paper focuses on the modeling of low-voltage automotive power electronic circuits to obtain accurate system simulation, including estimation losses. The aim is compare several metal-oxide semiconductor field-effect transistor (MOSFET) models find out which can be used for low-voltage, high-current converter simulations. As these are intended only analytical addressed as they may implemented into any circuit simulator. different modes operation switches described (commutation,...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This paper focuses on the role of N–N<formula formulatype="inline"> <tex>$^{+}$</tex></formula> junction doping profile model a PiN diode its turn-off transient and, particularly, influence multiple epitaxies in formulatype="inline"><tex>$^{+}$</tex></formula> profile. A conventional has been used previous work and an identification procedure for main design parameters demonstrated. However...
Purpose – This paper aims to focus on the trade-off between losses and converter cost. Design/methodology/approach The continual development of power electronic converters, for a wide range applications such as renewable energy systems (interfacing photovoltaic panels via converters), is characterized by requirements higher efficiency lower production costs. To achieve challenging objectives, computer-aided design optimization based genetic algorithms developed in Matlab environment. elitist...
Abstract The results of a comprehensive investigation spiral inductors are presented. A physically based model includes the self and mutual inductances, capacitances between adjacent turns, substrate capacitance, ohmic loss effects proposed. Heterogeneous simulation scheme, including circuit device models during time frequency domains, is successfully implemented in VHDL‐AMS language simulated numerically Simplorer platform. has been validated domain with measurement data spirals having...
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