The production of low cost sensors to monitor environment in some industrial sectors is a current need. In aviculture centers, for example, the concentration ammonia gas related humidity, and it necessary control avoid contamination. With this need mind, paper presents preparation characterization humidity sensor based on poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) polyaniline fully printed onto by commercial HP printer. Using electrochemical impedance spectroscopy, an...

Laser-induced graphene (LIG) on paper is a popular choice for fabricating flexible micro-supercapacitors (MSCs) as it simple and sustainable process. However, carbon-based MSC electrodes have limited energy densities. To address this challenge, study presents highly reproducible cost-effective method decorating manganese oxide (MnOx) interdigital LIG electrodes, fabricated via single-step direct laser writing (DLW) process substrates. The fibers embedded with MnOx precursors are transformed...

Abstract The recent advances in optic neuromorphic devices have led to a subsequent rise the development of energy‐efficient artificial‐vision systems. While energy consumption such is known be much lower than conventional vision systems, it that manufacturing accounts for largest share climate impact microelectronics, dominating over product use phase. Thus, there need develop sustainable processes and adopt low‐impact materials hardware solutions future. In this study, an Electrolyte‐Gated...

Bioderived and biodegradable electronics have the capability to reduce significantly waste electrical equipment (WEEE) can also be applied other sectors, where degradation benign by-products is essential, such as marine, farming, or health monitoring. Herein, authors report thin-film transistors (TFTs) arrays based on zinc oxide (ZnO) active layer using molybdenum (Mo) source, drain, gate electrodes. The developed TFTs were fabricated at room temperature onto a planarized substrate surface...

The present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (Al2O3) dielectric films for zinc thin-film transistors (TFTs). Fourteen performance parameters were measured and variance (ANOVA) combined responses has been applied identify how Al2O3 fabrication process influences electrical properties TFTs. Using this approach, levels manufacturing factors achieve optimal overall device have identified ranked. cross-checked TFT demonstrated...

Abstract Films containing different volumes of latex natural rubber (NR) in a fixed mass poly (vinylidene fluoride) (PVDF) powder were fabricated by compressing under annealing mixture both materials without using any solvent. This is an important issue keeping mind that these films have to be used the future as biomaterials applications once solvents are dissolve PVDF become toxic human. The with percentage characterized micro‐Raman scattering and Fourier transform infrared absorption...

Abstract This work describes the preparation and characterization of composite materials obtained by combination natural rubber (NR) carbon black (CB) in different percentages, aiming to improve their mechanical properties, processability, electrical conductivity, future applications as transducer pressure sensors. The composites NR/CB were characterized through optical microscopy (OM), DC thermal analysis using differential scanning calorimetry (DSC), dynamic (DMA), thermogravimetry (TGA),...

Here we present the study of supercapacitors based on molybdenum disulfide and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (MoS2/PEDOT:PSS) composite electrodes deposited by spray-coating. To produce MoS2/PEDOT:PSS ink, dispersions hydrothermally synthesized MoS2 PEDOT:PSS were mixed in different weight proportions. Electrodes containing only also fabricated for comparison. The films transferring as-prepared inks to an airbrush coupled a modified 3D printer base with in-line...

Abstract Proposals for new architectures that shorten the length of transistor channel without need high‐end techniques are focus very recent breakthrough research. Although vertical and electrolyte‐gate transistors previously developed separately, advances have introduced electrolytes into transistors, resulting in electrolyte‐gated field‐effect (EGVFETs), which feature lower power consumption higher capacitance. Here, EGVFETs employed to study charge transport mechanism spray‐pyrolyzed...

The thermal degradation behaviour of rubber from six new Hevea brasiliensis clones (IAC 40, 56, 300, 301, 302 and 303) São Paulo State, Brazil was studied by thermogravimetry using the Flynn–Wall–Ozawa approach to assess kinetic parameters (reaction order, activation energy pre-exponential factor) decomposition process. This study indicated that is a complex multiple step process, which depends on type studied. these can be classified, following order decreasing stability, as IAC 303 > 56 40 300 301.

Abstract Paper electronics has emerged as an ecofriendly, light, low-cost, and recyclable material for the fabrication of flexible printed transistors. In this study, we present fully organic electrochemical transistors using active layer PEDOT:PSS, carbon electrodes, cellulose-based electrolyte, three different papers substrates: bond, vegetal, Lumi Silk, relating electrical properties to morphologies paper surfaces. Each presents regularity, diffusion capabilities, roughness, with...

A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes effect guard ring surrounding Ohmic contact to semiconductor. The predicts most features observed in MIS fabricated using regioregular poly(3-hexylthiophene) as active semiconductor and polysilsesquioxane gate insulator. In particular, it shows that when driven into accumulation, parasitic transistor formed by can give rise an additional feature admittance-voltage plot could be...

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90°C, hole trapping shown be distributed energy with their decreasing approximately linearly from ∼20×1010to5×1010cm−2eV−1 over an range extending 0.05to0.25eV above bulk Fermi level.