A5101765832- GaN-based semiconductor devices and materials
- Antenna Design and Analysis
- Metamaterials and Metasurfaces Applications
- Force Microscopy Techniques and Applications
- Nanowire Synthesis and Applications
- Thermography and Photoacoustic Techniques
- ZnO doping and properties
- Ga2O3 and related materials
- Microfluidic and Bio-sensing Technologies
- Non-Destructive Testing Techniques
- Electrokinetic Soil Remediation Techniques
- Advanced Antenna and Metasurface Technologies
- Solidification and crystal growth phenomena
- Semiconductor Quantum Structures and Devices
- MXene and MAX Phase Materials
- Fluid Dynamics and Thin Films
- Nanopore and Nanochannel Transport Studies
- Mineral Processing and Grinding
- Metallurgical Processes and Thermodynamics
- Electrical and Bioimpedance Tomography
Wuhan University of Science and Technology
2024
University of Chinese Academy of Sciences
2016
Chinese Academy of Sciences
2016
A new contactless technique is presented for the detection of micron-sized insulating particles in flow an electrically conducting fluid. transverse magnetic field brakes this and tends to become entrained direction by a Lorentz force, whose reaction force on magnetic-field-generating system can be measured. The presence suspended fluid produce changes generating pulses it; these enable counted sized. two-dimensional numerical model that employs moving mesh method demonstrates measurement...
An electrical method using the pulses of resistance to detect sizes and numbers particles,has been developed an effective way in detection red blood cells was evaluated be a professional this industry by US department health. This technology has obtained huge achievements area medical instruments Coulter brothers’ own efforts. The principle its applications areas Cell, gene metallurgy, introduced detail paper. development reveals profoundly some universal laws science fully shows that...
Gallium nitride (GaN) has attracted much attention for a long time as promising material semiconductor device application in the transistors, visible light-emitting sources and high powder diodes.Many investigations are paid to synthesis method, process of crystal growth, structure optical properties GaN its film.In this article, preparation methods using different kinds raw materials have been reviewed.
Abstract In this paper, the preparation technology of GaN powder has been studied by using plasma synthesis system, and several properties were improved such as: morphology, particle size, structure optical properties. The result shows that, applying for method, high purity was manufactured; a good morphology regular spherical shape. ratio more than 95%; can be adjusted with different process parameters to achieve size control; sharp diffraction peak crystallinity; wurtzite luminescent