A5016563281- Particle Accelerators and Free-Electron Lasers
- Particle accelerators and beam dynamics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic confinement fusion research
- Photocathodes and Microchannel Plates
- Radiation Detection and Scintillator Technologies
- Antenna Design and Analysis
- Microwave Engineering and Waveguides
- Superconducting Materials and Applications
- Nuclear Physics and Applications
- Particle Detector Development and Performance
- Advanced Optical Sensing Technologies
- Gyrotron and Vacuum Electronics Research
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Antenna and Metasurface Technologies
- Advanced Control Systems Optimization
- Advanced Memory and Neural Computing
- Radio Frequency Integrated Circuit Design
- Electronic and Structural Properties of Oxides
- Advanced X-ray Imaging Techniques
- Radiation Therapy and Dosimetry
- Control and Stability of Dynamical Systems
- Pulsed Power Technology Applications
- Currency Recognition and Detection
Ankara University
2016-2024
Turkish Atomic Energy Authority
2021-2022
GSI Helmholtz Centre for Heavy Ion Research
2017
Helmholtz-Zentrum Dresden-Rossendorf
2012
Texas Instruments (United States)
1992-2006
University of South Australia
1999
Yale University
1986
Analyses have been performed on floating-gate avalanche-injection MOS transistor (FAMOS) devices which subjected to write/erase cycling, resulting in hole injection into the tunnel dielectric. Theoretical and experimental analysis of these shown that bits exhibit fast erase due trapped holes are highly modulated by field across Two distinct disturb mechanisms, one is heavily impacted evaluated with regards their temperature dependencies empirical models developed for both mechanisms.< <ETX...
This paper is concerned with the effects of source bias during erase operation on reliability Flash EPROM devices. It will be shown that positive charge in tunnel oxide, mostly generated by operation, a major cause unintentional loss/gain mechanisms disturb data content memory cell. The are evaluated context oxide generation and resulting enhancement gate current causes loss. An optimal erase, around 2 V for our samples, to least charge. A model based band-to-band tunneling-induced hole Si...
The effects of forward active current stress on the electrical characteristics self-aligned bipolar transistors are reported. dominant emitter-base junction degradation appears to be due interface-state generation underneath sidewall oxide. leakage increase in collector mainly results from electron trapping at field-oxide/silicon interface. Electromigration contact was identified cause increased resistance those devices without adequate reach-through post-implant annealing treatment.
The authors present a novel metal-to-silicide-polysilicon capacitor and compare it with metal-to-polysilicon capacitors conventional polysilicon-to-polysilicon capacitors. Voltage coefficient data for these structures oxide, oxide/nitride, oxide/nitride/oxide, nitride dielectrics are also discussed. It is shown that when metal-to-silicided polysilicon used, voltage coefficients of less than 4 p.p.m./V can be attained, which considerably obtained metal-to-poly or poly-to-poly used. For...
A single-channel class-D audio amplifier output stage outputs 240W undipped into 4Omega 0.1% open-loop THD+N allows using the device in a fully-digital signal path with no feedback. The current capability is plusmn18A and part fabricated 0.4μm/1.8μm high-voltage BiCMOS process. Over-current sensing protects from short circuits
A method for determining the capacitive coupling coefficients of flash erasable programmable read only memories (EPROMs) is introduced. This technique relies on Fowler-Nordheim erase measurements and source/drain junction leakage characteristics device to extract control gate, source, drain coefficients. An advantage offered by this its use an actual EPROM cell without requiring additional test structures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The Turkish Accelerator and Radiation Laboratory in Ankara, abbreviated as the TARLA facility, is proposed first facility of Center (TAC) project. under construction Golbasi campus Ankara University by coordination Institute Technologies (IAT). designed to generate free-electron laser (FEL) pulses mid- far-infrared regions well Bremsstrahlung radiation up 30 MeV. based on superconducting electron accelerators be operated between 10 40 main goal build a user open new opportunities for...
In this Letter, we present a simple approach for monitoring electron bunch form and arrival time combining electro-optic sampling phase frequency sensitive signal detection. The sensitivity of the technique has potential to allow online diagnostics be performed down charges in femto coulomb regime. concept high impact developments next generation 4th x-ray light sources working with long pulse trains or continuous wave mode operation.
A highly efficient gate current injection mechanism, band-to-band tunneling induced substrate hot electron (BBISHE) injection, is studied and demonstrated by programming experimental EPROM (electrically programmable read-only memory) devices. The in the BBISHE generated via impact ionization energetic holes which are released electrons deep depleted p-type silicon. has very high ( approximately 1%) efficiency, defined as I/sub G//I/sub D/, compared to channel (usually <10/sup -6/). With this...
A 0.6- mu m FAMOS cell structure, which features a lightly doped source region to achieve enhanced source-side-injection for channel hot electron programming, is presented. The use of the mechanism EPROM programming has been previously proposed, but this work first time that with fabricated and evaluated. impact dopant concentration depth non-overlapped LDD (lightly drain) on performance characterized optimized. optimized cells exhibit excellent programmability drain voltage down 3.3 V....
The Turkish Accelerator and Radiation Laboratory in Ankara (TARLA) will operate two InfraRed Free Electron Lasers (IR-FEL) covering the range of 3-250 microns. facility consist an injector fed by a thermionic triode gun with two-stage RF bunch compression, superconducting accelerating ELBE modules operating at continuous wave (CW) mode independent optical resonator systems different undulator period lengths. electron beam also be used to generate Bremsstrahlung radiation. In this paper, we...
Three different transparent multilayer microstrip patch antennas are proposed in this study. Antenna structures consist of one, two and three layers dielectric/Ag/dielectric. The fabricated on a flexible polycarbonate substrate by in-line magnetron sputtering method. SEM images the validate homogeneity antennas. sheet resistance (MLAs) measured to be range between 2.78 Ω/sq 7.99 Ω/sq. optical transparency dielectric/Ag/dielectric 85%, 73% 68%, respectively, at 550 nm wavelength. resonance...
This paper presents a compact and low-profile slotted waveguide antenna (SWA), designed to achieve dual-frequency performance within the Ku-band, targeting low-earth-orbit (LEO) satellite applications. study introduces an approach by parameter sweeping of slot offset in SWA design, revealing new optimal that significantly outperforms traditional Stevenson method for calculating uniform offsets. Additionally, this investigation modifies conventional calculations length width, leading...
The complex aspects of digital class D audio amplification and relative technology issues are discussed. Focus is on a IOOW into 4C2 bridge-tied-load (BTL) power stage PIC. A 03Spm BCD (LBCS) having SOV LDMOS, lOpm plated CuNiF'd metal with bonding capability was used to fabricate tbc chip.
Turkish Accelerator and Radiation Laboratory in Ankara (TARLA) facility is a superconducting linac-based infrared free-electron laser light source the frame of Center (TAC).Construction premises was completed 2009, with continued progress hardware infrastructure installation until today.In this respect, button type beam position monitor (BPM) designed, produced tested for use TARLA facility.Antenna simulations mechanical design studies based on electron parameters are carried out by software...
A flash-EPROM cell structure that can be programmed at low drain voltages and power is disclosed. The new element in the device incorporation of buried junction source side where high electric field region established during programming. by hot-electron injection erased Fowler-Nordheim tunneling side. Typical programming time 10 mu s/byte accomplished with 3.5 V on junction. built standard EPROM technology offer advantages low-voltage supply systems such as portable notebook computers.< <ETX...
An unintentional channel hot carrier injection phenomenon is reported for flash memory cells. The occurs near the source metallurgical junction during electrical erase and caused by subthreshold leakage current between floating drains. This mechanism initiated a minority population (electrons) which generated impact ionization around later collected Subsequently, when gate potential approaches threshold voltage, these electrons drift from drain toward source. When they reach depletion...
The radiation damage in optical materials mostly manifests itself as the loss of transmittance. recover from to some extent when exposure is stopped. recovery at a faster rate presence stimulating light. On other hand, systematic study dynamics function light parameters such its wavelength, intensity and duration method has not been performed detail yet. We established an LED station which provides pulsed continuous various wavelengths custom geometries. irradiated soda lime glass samples...