In this paper, we studied the effect of rubidium fluoride (RbF) post-deposition treatment (PDT) on properties Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGS) solar cells. Specifically, recombination mechanisms were analyzed by a series characterizations including thermal and optical defect spectroscopies, temperature dependent current density-voltage measurements, time resolved photoluminescence. It was found that main...

Solar cell degradation can occur through many pathways and at the different stages of fabrication process, notably because water condensation. In case Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGS) solar cells, impact ingress on Mo back contact be substantial for not only film itself but also device performance reliability. Microstructural modification, change in morphology, loss reflectance, increased resistivity...

The impact of moisture ingress on the surface copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, glass can break encapsulant degrade. During such conditions, water potentially degrade interior layers decrease performance. first layer will come contact with is transparent conductive oxide (TCO) layer. To simulate this ingress, complete devices were immersed deionized water. identify...

The impact of moisture and heat treatment on the microstructural, chemical, electrical properties Cu(In,Ga)Se2 films their collective effect solar cell device performance was studied. X-ray photoelectron spectroscopy secondary ion mass measurements show that water exposure causes surface modification alters alkali metal distribution, while no composition or structural observed. Deep level transient optical spectroscopies revealed trap densities (NT) for both EV + 0.65 eV 0.98 traps increase...

The effect of water ingress on the surface buffer layer a Cu(In, Ga)Se2 (CIGS) solar cell was studied. Such degradation can occur either during fabrication process, if it involves chemical bath as is often case for CdS, or while modules are in field and encapsulants degrade. To simulate impact this moisture ingress, devices with structure sodalime glass/Mo/CIGS/CdS were immersed deionized water. thin films then analyzed both pre post soaking. Dynamic secondary ion mass spectroscopy (SIMS)...

In this work, the diffusion process of sodium (Na) in molybdenum (Mo) thin films while it was deposited on soda lime glass (SLG) studied. A small amount oxygen present chamber direct-current (DC) magnetron sputtering used for deposition. The substrate temperatures were varied to observe its effect. Such films, with or without oxidations, are often film solar cells, either as back contact hole transport layers. Secondary ion mass spectrometry (SIMS) quantify concentration species. grain...

Preliminary studies of instabilities and degradation due to moisture ingress into the molybdenum (Mo) back contact its impact on performance Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> solar cells are presented. The samples along with reference devices were characterized obtain an outline deteriorating effect. Overall, resistivity surface roughness Mo layer increased exposure humidity has a significant device performance.

Post Deposition Treatments (PDT) have been key to improving the efficiency of CIGS solar cells. While has continued increase, for thermal evaporation processes, high substrate temperature and low deposition rates are a necessity. For many chemical vapor transport techniques can be used both purify grow large pure crystalline compounds. This is often done with halide species temperature. By using substituent metals in confluence halide, we explored possibility layer at fast rate while still...

One of the key challenges for furthering economic viability thermally evaporated CIGS is thermal energy required higher efficiencies. While several techniques have pushed efficiency cells higher, including alkali post deposition treatment, high temperature often necessary efficiency. By using a modified 3-stage process, with low stage 1 and 2 temperatures, it possible to create absorber layers current collection capabilities. judiciously introducing group IB metal halides may be further...

Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates low temperature during the process, copper chloride vapor treatment was introduced in between second third stages to enhance properties. X-ray diffraction scanning electron microscopy demonstrate that drastic changes occur after this recrystallization yielding with much larger grains. Secondary ion mass spectrometry shows depth profile of many elements is not (such...

Deposited CIGS layers typically undergo a NaF post deposition treatment (PDT) to improve the electrical properties of deposited films. These annealing processes can also be used recrystallize To determine effect as fluxing agent, was at varying substrate temperatures. In-situ with then done how initial grain structure energy impacts recrystallization. Gallium appears significant deterrent recrystallization; most crystallized film experienced phase segregation between CIS and gallium...

Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments 400 °C 500 indium bromide vapor studied compared to the simple annealing under selenium. Structural, electrical, chemical analyses demonstrate that there is drastic difference between different types annealing, with ones leading much larger grains higher conductivity. These properties are associated modification elemental...

Cu(In,Ga)Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The of recrystallization was carried out in between the 2 <sup xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> and 3 xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> stages by flashing 25 mg AgBr for minutes. A change morphological structure observed as...

Cu(In,Ga)Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> samples were deposited onto molybdenum back contact at low temperature using thermal evaporation. Recrystallization was then performed 400 °C indium bromide vapor treatment for one hour. The developed change in morphology with improved grain size and increased crystallinity. Variation composition profile observed, enhancing the In content while decreasing Ga content. No apparent...

The recrystallization by indium chloride of Cu(In,Ga)Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thin films deposited co-evaporation at 350°C was studied. process consists the post-deposition treatment CIGS sample InCI xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> vapor for 30 minutes with emphasis on grain growth. resulted in uniform increased size and improved crystallinity. XRD measurements suggests formation rich phase....

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage co-evaporation process on molybdenum coated glass substrate. A vapor treatment done in between the second third stage flashing CuCl <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for 5 mins 400 °C. large change morphology crystal structure observed after treatment. XRD SEM showed that small grains transformed into grains. smoother...

Spin polarized photocathodes are key to the future operation of electron accelerators such as ones at Thomas Jefferson National Accelerator Facility and Brookhaven Laboratory. Currently, these come in short supply due limited production by molecular beam epitaxy. By developing a process implement similar structures using metal organic chemical vapor deposition, availability devices can be increased. In this paper, we detail implementation recent photocathode advancements via deposition show...

CIGS solar cells were submitted to damp heat treatment of the window layer by immerging full devices into deionized water at 50°C for 24 hours. An overall loss in device performance was observed current-voltage (J-V) measurements after such exposure, mostly due a decrease short-circuit current density, open-circuit voltage, and fill factor. To determine underlying cause degradation, parameters numerically simulated using SCAPS-1D, correlation with other materials characterization as...

CIGS solar cell degradation due to the impact of moisture and heat treatment was studied as a function sputtering pressure transparent conductive oxide (TCO) deposition. The devices were immersed in deionized water for up 72 hours. results compared showed decrease efficiency with time. performance loss mainly driven by change shunt resistance, impacting FF. Decrease current density increase series resistance also noted. Interestingly, found be more drastic TCO deposited at higher than lower pressure.

CuInSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> semiconductor thin films were fabricated using a single-stage thermal co-evaporation process. The as-deposited samples prepared at 400 °C with both Cu-poor and Cu-rich composition before being recrystallized. process of recrystallization involved post-deposition treatment by InCl xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> for two different durations (30 min or 60 min)...

CuIn <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(1−x)</inf> Ga xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Se xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (CIGS) photovoltaics have limited market success due to high capital costs largely attributed a slow, high-temperature deposition procedure. To reduce such we show that high-rate, low-temperature approach including short recrystallization step using metal halides can...