A5065723544- Nuclear Materials and Properties
- Fusion materials and technologies
- Silicon Carbide Semiconductor Technologies
- Nuclear materials and radiation effects
- High Entropy Alloys Studies
- High-Temperature Coating Behaviors
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Advanced materials and composites
- Advanced ceramic materials synthesis
- Molten salt chemistry and electrochemical processes
- Thermodynamic and Structural Properties of Metals and Alloys
- Nuclear reactor physics and engineering
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Spectroscopy and Quantum Chemical Studies
- Material Properties and Applications
- Advanced Surface Polishing Techniques
- Material Selection and Properties
- Mass Spectrometry Techniques and Applications
- Atomic and Molecular Physics
Southwest University of Science and Technology
2019-2025
The surface coating technology, encompassing ceramics, refractory materials, metallic alloys containing Al or Si, and multicomponent composites, presents a viable approach to improve the corrosion resistance of ferritic/martensitic (F/M) steels with (9–12) wt.% Cr in liquid lead-bismuth eutectic (LBE) environment. Among these chromium (Cr) emerges as particularly noteworthy option. This study specifically focused on depositing 3 μm thick T91 SIMP using magnetron sputtering. Subsequently,...
In this work, static immersion and gravimetric methods were used to study the corrosion behavior of three common stainless steels four Ni-based alloys in a NaCl–MgCl2–KCl mixed molten salt under vacuum atmosphere. The test was conducted at 700 °C, with maximum exposure time 100 h. Corrosion determined by measuring mass loss sample different intervals rates microstructure alloy analyzed scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), atomic force microscope (AFM),...
The electronic stopping power of protons traveling along the channeling and off-channeling trajectories in platinum (Pt) is reported based on time-dependent density functional theory calculations for electrons combined with Ehrenfest molecular dynamics simulations ions real time space. We provided an intuitive description a wide range ion energies, revealed excitation mechanism inner $4f$ Pt. comparison calculation results experimental data showed that conduction are sufficient to describe...
Environment coatings are frequently considered, to improve the corrosion resistance of silicon carbide (SiC) in pressurized water reactor (PWR) and boiling (BWR) surroundings. Chromium (Cr) is one main candidate materials for on zirconium-based alloys accident-tolerant fuel (AFT) cladding. In this work, magnetron sputtered Cr SiC substrates were irradiated by 500 keV He+ ions at room temperature. Moreover, microstructural characterization was conducted specimens using scanning electron...
The alteration of the microstructure and magnetic performance an exchange bias system, induced by ion irradiation, adversely affects practical application spintronic/storage devices in extreme environments. Here, we report systematically correlation between static dynamic magnetism changes NiFe/NiO exchange-biased bilayers after high-energy Xe+ irradiation. effect cascade collision irradiation on is studied through Monte Carlo simulations. It distinguished from traditional modification...
Zr/Nb nanoscale multilayers are regarded as one of the important candidate materials used in next-generation reactors. Understanding structural evolution induced by ion bombardment is crucial for evaluation lifetime performance. Magnetron sputter-deposited with a periodicity 7 nm were subjected to 300 keV He irradiation three different fluences at room temperature. The depth-resolved strain and damage profiles investigated grazing incidence X-ray diffraction. tensile was found deposited...
Stacking faults are important for improving radiation resistance of SiC. We reported a new method to fabricate stacking by recrystallization amorphous SiC, which was formed Si implantation at room temperature. The density and length were investigated transmission electron microscopy. Defect recombination depended on the direction faults. Less defects remained in ion-irradiated materials when habit plane is perpendicular irradiation surface.
Radiation-induced defect annealing in He or Fe-implanted 6H-SiC by means of Fe-ion irradiation is investigated cross-sectional transmission electron microscopy (XTEM). The lattice defects are formed implantation at 450°C, and amorphization Fe room temperature (RT). Postimplantation, the specimens irradiated 6.7-MeV/u Fe17+ ions RT. We investigate evolution using XTEM before after Fe17+-ion irradiation. It shows that induces recovery pre-exiting epitaxial recrystallization amorphous layer....
A good understanding of the chemical disorder in silicon carbide (SiC) after ion irradiation is crucial for evaluating structural stability both semiconductor and nuclear power systems. In this study, 6H-SiC single-crystal was irradiated with 500 keV He 2.5 MeV Fe ions at room temperature, followed by annealing 1500 °C 2 h. The disorders were investigated electron energy-loss spectroscopy transmission microscopy 200 kV. Facetted voids found end region damaged layer. Compared substrate...
Five carbide powders, TiC, Cr3C2, ZrC, NbC and SiC, were selected as raw materials mixed by dry or wet milling. Then (TiCrZrNb)C4-SiC multiphase ceramics successfully prepared spark plasma sintering (SPS) at 1900 °C, using D-HECs-1900 (dry milling method) W-HECs-1900 (wet method), respectively. In this study, the effects of ball method on microstructure mechanical properties high-entropy systematically investigated. Compared to D-HECs-1900, has a more uniform elemental distribution smaller...
The effects of alloying elements (Si, Cr, Mo) on the solution and diffusion oxygen (O) atoms at grain boundary iron (Fe) Σ5(310)/[001] are investigated by simulations ab initio density functional theory (DFT). It is found that Si, Mo Cr prefer to segregate boundary, further affect O Fe boundaries. segregated promotes O, while Si inhibit boundary. Meanwhile, accelerate retards in Further analysis indicates closely related interactions between atoms, which determined competition distortion...
Silicon carbide (SiC) is a promising material used in the advanced semiconductor industry. Fabricating SiC-on-insulator via H implantation good method. He and co-implantation into Si can efficiently enhance exfoliation efficiency compared to only implantation. In this study, 6H-SiC single crystals were implanted with He+ H2+ dual beams at room temperature, followed by annealing 1100 °C for 15 min, irradiations 60 keV ions fluence of 1.5 × 1016 ions/cm-2 or 5.0 100 5 carried out. The lattice...